Samsung 512MB PC3200 DDR SDRAM DIMM (CL3, di-tunay na RAM)

Nai-post ni DeviceLog.com | Nai-post sa DDR SDRAM | Nai-post sa 2013-03-13

3

Samsung DDR 512MB PC3200U-30331-B2 CL3 (di-tunay na RAM)

Samsung DDR 512MB PC3200U-30331-B2 CL3 underside (di-tunay na RAM)

  • Pangalan ng Produkto : Samsung DDR SDRAM 512MB PC3200 (hindi tunay na mga bahagi)
  • Numero ng bahagi : PC3200U-30331-B2 M368L6423ETM-CCC
  • Tagagawa : Samsung Electronics (PINAGSABI ni SEC)
  • Bansa ng pagawaan : Timog Korea
  • Bumuo ng taon / linggo : 2003/33
  • Kapasidad ng Data : 512MB
  • Ang bilis ng orasan : 400Mhz (PC3200)
  • Mga Tampok : 184pin, Unbuffered Non-ECC DDR SDRAM DIMM
  • Komposisyon ng chip ng data : [SEC K4H560838E-TCCC] ✕ 8 chips
  • Data banks : 4 banks
  • Refresh interval : 7.8μs (8K/64ms refresh)
  • Read latancy : 3 clock (CL3)
  • Burst length : 2, 4, 8
  • Burst type : sequential & interleave
  • Maximum burst refresh cycle : 8
  • VDD, VDDQ : 2.6V±0.1V

Kaugnay na mga post:

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Mga Komento (3)

Savvas sinabi sa 2016-04-25

Is this ddr 1???

Sagot
DeviceLog.com sinabi sa 2016-06-02

Yes.

Sagot
film western sinabi sa 2018-06-19

Thank you and good luck.

Sagot

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