Самсунг 256ГБ ПМ981 М.2 ПЦИе НВМе Перформанс ОЕМ ССД (Пхоеник Цонтроллер)

Samsung PM981 is the OEM product derived from Samsung 970 EVO.

This drive features Samsung’s new 64-layer V-NAND and a high-performance controller that delivers up to 3,000 MB/s of sequential read throughput and 270,000 random read IOPS.

Samsung Polaris V2 memory controller was used in the early version, but ARM Phoenix memory controller was used in the later version.

It was popular for a while because of its good value for money.

Назив производа	Самсунг 256ГБ ПМ981 М.2 ПЦИе НВМе Перформанс ОЕМ ССД
Произвођачки број	MZVLB256HAHQ-00000
Model	MZ-VLB2560
Realeased Year	2017
Произвођач	самсунг
Земља производње	Кина
Пroduct Classification	Internal SSD (Solid State Drive)
форм фактор	М.2 (2280)
Приступ	PCIe 3.0 (x4) (32GT/s)
Host Controller Interface	НВМе 1.2
Catacity	256МБ
Byte per Sector	512Byte
Memory Type	NAND Flash Memory, ТЛЦ
NAND Structure	Samsung V-NAND V4 (TLC 3D NAND, 64-layers)
драм	○
SLC Caching	○
Performance	– Sequential Read : 3000МБ / с – Sequential Write : 1800МБ / с – IOPS for read : Макс. 270k – IOPS for write : Макс. 420k
Memory Controller	ARM Phoenix (S4LR020 S821HNQD 1842 ARM Phoenix)
NVMe Heat Sink	not included
UBER	< 1 sector per 10 15 bits read
MTBF	1.5 Million Hours
Temperature	Оператинг : 0°C ~ 70°C Нерадно : -40° Ц ~ 85 ° Ц
Humidity (non-condensing)	Нерадно : 5 ~ 95%
Линеарни шок	Нерадно (0.5ms duration with 1/2 sine wave) : 1,500 Gpeak
Вибрација	Нерадно (20 ~ 2,000 Хз, Sinusoidal) : 20 Gpeak
Voltage Ripple/Noise (max.)	100mV p-p
Потрошња струје	– Read (Typ, РМС) : 5.9В – Write (Typ, РМС) : 5.7В – Неактиван (Typ) : 30mW – L1.2 (Typ) : 5mW
Width	22.00 ± 0.15 мм,
Length	80.00 ± 0.15 мм,
висина	Макс. 2.38 мм,
Тежина	Макс. 9.0г