SIMM Samsung 1MB DRAM 30pin

Dihantar oleh DeviceLog.com | Dihantar dalam DRAM asal | Dihantar pada 2012-05-18

1

Bahagian belakang Samsung 1MB DRAM SIMM (KMM591000AN-7, KMM591000BN-7) (KM44C1000AJ-7, KM44C1000BJ-7)

Bahagian belakang Samsung 1MB DRAM SIMM (KMM591000AN-7, KMM591000BN-7) (KM44C1000AJ-7, KM44C1000BJ-7)

KMM591000AN-7 terdiri dua cip KM44C1000AJ-7 dan satu cip KM44C1000CJ-7. KMM591000BN-7 disusun dengan dua cip KM44C1000BJ-7 dan satu cip KM44C1000CJ-7. Mereka adalah 1MB dram simms yang dihasilkan oleh Samsung Electronics.

  • Syarikat pembuatan : Samsung Elektronik
  • Manufactured Year : 1992 / 1993
  • Negara pembuatan : Korea Selatan
  • Ciri-ciri Modul : 30sematkan, SIMM, RAM Pariti
  • Kapasiti Ingatan : 1MB
  • Jalur Lebar : 8sedikit
  • Ciri Kelajuan : 70NS(tRAC)
  • Komposisi Cip :
    KMM591000AN-7 = KM44C1000AJ-7 × 2 + KM44C1000CJ-7
    KMM591000BN-7 = KM44C1000BJ-7 × 2 + KM44C1000CJ-7

Catatan berkaitan:

SIMM 1MB Hyundai 30-pin (HY514400A × 2 + HT531000A)SIMM Hyundai 1MB DRAM 30pin SIMM DRAM Goldstar 30pin 1MB (GM71C4400A + GMC71C1000) (bahagian depan)SIMM DRAM Goldstar 1MB 30pin (GM71C4400A + GMC71C1000) SIMM DRAM Goldstar 30pin 1MB (GM71C4400B + GMC71C1000B) (bahagian depan)SIMM DRAM Goldstar 1MB 30pin (GM71C4400B + GMC71C1000B) Hyundai 72pin 16MB DRAM SIMM HY5117404B (Bahagian depan)Hyundai 16MB EDO DRAM 72pin SIMM (HYM532414) Hyundai 4MB EDO DRAM 72pin SIMM (HYM532100AM-70) LGS GM71C17400CJ6 16MB EDO-DRAM SIMM bahagian hadapanLG Semicon 16MB EDO-DRAM 72pin SIMM (GM71C17400CJ6) Samsung 4GB PC3-10600 DDR3 SDRAM SO-DIMM Samsung DDR SDRAM 256MB PC2700 DIMM (M368L6423DTM)Samsung 512MB PC2700 DDR SDRAM DIMM (M368L6423DTM) Samsung 8GB DDR3 SDRAM 2R × 8 PC3-12800U-11-12-B1 M378B1G73QH0-CK0 1408Samsung 8GB PC3-12800 DDR3 SDRAM DIMM (2R × 8, M378B1G73QH0-CK0)
Teg:, , , , , , , , , ,

Komen (1)

tài liệu tự học kế toán berkata pada 2018-08-17

Hello.This article was really fascinating, particularly because I was browsing for thoughts on this
subject last Wednesday.

Balas

Tulis komen