Manifakti : Hyundai Electronics Industries Co., Ltd. Build Year : 1994 Peyi fabrikasyon : Nimewo Pati Kore di Sid : HYM532100AM-70 Form Factor : SIMM Memory type : EDO DRAM Memory Capacity : 4MB Bus type : Fast Page Memory (FPM) Error correction : Non-parity Pins : 72pin Bandwidth : 32bit Latency : 70ns (tRAC) Voltage […]

Non pwodwi : EKmemory DDR3 SDRAM 2GB 2Rx8 PC3-10600U-9-10-B0 Fabricant : EKmemory Peyi fabrikasyon : Kapasite Done Kore di Sid : 2GB vitès revèy : 1333Mhz (PC3-10600) Karakteristik : 240peny, Unbuffer Non-ECC DDR3 SDRAM DIMM Done chip konpozisyon : [EKM324L28BP8-13] ✕ 16 bato VDD vòltaj : 1.5V Homepage : http://www.ekmemory.com/bbs/view.php?id=dram&non = 91

KMM591000AN-7 is composed two KM44C1000AJ-7 chips and one KM44C1000CJ-7 chip. KMM591000BN-7 is composed with two KM44C1000BJ-7 chips and one KM44C1000CJ-7 chip. They are 1MB DRAM SIMMs produced by Samsung Electronics. Konpayi fabrikasyon : Samsung Electronics Manufactured Year : 1992 / 1993 Peyi fabrikasyon : South Korea Module Features : 30peny, SIMM, Parity RAM Memory Capacity […]

EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little. Manifakti : Hyundai Electronics Industries Co., Ltd. Konstwi Ane/Semèn : 1997/32 Peyi fabrikasyon : Kore di (Koredisid) Nimewo Pati […]

This RAM is 30-pin 1MB SIMM produced by Hyundai Electronics industry(Hynix kounye a). 30-pin SIMMs were used universally from 80286 to 80486. If the number of chips is odd number, one of the chips perform parity check. This RAM is composed of two HY514400A(1M x 4bit) and one HY531000A(1M x 1bit). The memory capacity of […]