ሳምሰንግ 256GB PM981 M.2 PCIe NVMe አፈጻጸም OEM SSD (ፊኒክስ መቆጣጠሪያ)

Samsung PM981 ከ Samsung የተገኘ የኦሪቲ ምርት ነው 970 ኢቫ.

ይህ ድራይቭ የ Samsung አዲስ 64-ንብርብር ቪ-ን እና እና ከፍተኛ አፈፃፀም ተቆጣጣሪ ነው 3,000 MB / s ቅደም ተከተል ማንቀሳቀስ እና 270,000 የዘፈቀደ የተነበቡ አዮፒኤስ.

ሳምሰንግ ፖላሪስ v2 ማህደረ ትውስታ መቆጣጠሪያ በቀዳሚው ስሪት ውስጥ ጥቅም ላይ ውሏል, but ARM Phoenix memory controller was used in the later version.

It was popular for a while because of its good value for money.

የምርት ስም	ሳምሰንግ 256GB PM981 M.2 PCIe NVMe አፈጻጸም OEM SSD
ክፍል ቁጥር	MZVLB256HAHQ-00000
ሞዴል	MZ-VLB2560
Realeased Year	2017
አምራች	ሳምሰንግ
የተመረተ አገር	ቻይና
ፒroduct Classification	Internal SSD (Solid State Drive)
የቅጽ ምክንያት	M.2 (2280)
በይነገጽ	PCIe 3.0 (x4) (32GT/s)
Host Controller Interface	NVMe 1.2
Catacity	256ጂቢ
Byte per Sector	512Byte
Memory Type	NAND Flash Memory, TLC
NAND Structure	Samsung V-NAND V4 (TLC 3D NAND, 64-layers)
ድራም	○
SLC Caching	○
አፈጻጸም	– Sequential Read : 3000ሜባ/ሰ – Sequential Write : 1800ሜባ/ሰ – IOPS for read : ከፍተኛ. 270k – IOPS for write : ከፍተኛ. 420k
Memory Controller	ARM Phoenix (S4LR020 S821HNQD 1842 ARM Phoenix)
NVMe Heat Sink	not included
UBER	< 1 sector per 10 15 bits read
MTBF	1.5 Million Hours
Temperature	Operating : 0°C ~ 70°C Non-operating : -40° ሴ ° 85 ° ሴ
Humidity (non-condensing)	Non-operating : 5 ~ 95%
Linear Shock	Non-operating (0.5ms duration with 1/2 sine wave) : 1,500 Gpeak
Vibration	Non-operating (20 ~ 2,000 Hz, Sinusoidal) : 20 Gpeak
Voltage Ripple/Noise (max.)	100mV p-p
የኃይል ፍጆታ	– Read (Typ, RMS) : 5.9ወ – Write (Typ, RMS) : 5.7ወ – Idle (Typ) : 30mW – L1.2 (Typ) : 5mW
Width	22.00 ± 0.15 ሚ.ሜ
Length	80.00 ± 0.15 ሚ.ሜ
ቁመት	ከፍተኛ. 2.38 ሚ.ሜ
ክብደት	ከፍተኛ. 9.0ሰ