Fabricante : Hyundai Electronics Industries Co., Ltd. Ar je̲ya nju̲ts'i : 1994 Ar ximha̲i fabricación : 'Bede ya pieza Corea jar Sur : Factor dets'e HYM532100AM — 70 : Ar klase ar memoria SIMM : Ar mfeni memoria DRAM EDO : 4Ar klase ar bus MB : Memoria página ngut'a (FPM) Corrección errores : Pines hinda paridad : 72pin Ancho 'me̲i : 32Latencia bits : 70Ns (Trac) Voltaje […]

Thuhuu ar producto : EKmemory DDR3 SDRAM 2GB 2Rx8 PC3 — 10600U — 9 — 10 — B0 Fabricante : EKmemory ar ximha̲i ar fabricación : Ar mfeni datos Corea jar Sur : 2GB velocidad ar ora : 1333MHz (PC3 — 10600) Ya 'befi : 240anclar, Desbúfer DDR3 SDRAM DIMM Composición ar chip datos : [EKM324L28BP8 — 13] ✕ 16 chips voltaje VDD : 1.5V Página inicio : HTTP://www.ekmemory.com/bbs/view.php?id=dram&no=91

KMM591000AN-7 is composed two KM44C1000AJ-7 chips and one KM44C1000CJ-7 chip. KMM591000BN-7 is composed with two KM44C1000BJ-7 chips and one KM44C1000CJ-7 chip. They are 1MB DRAM SIMMs produced by Samsung Electronics. Manufacturing Company : Samsung Electronics Manufactured Year : 1992 / 1993 Ar ximha̲i fabricación : South Korea Module Features : 30anclar, SIMM, Parity RAM Memory Capacity […]

EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little. Fabricante : Hyundai Electronics Industries Co., Ltd. Build Year/Week : 1997/32 Ar ximha̲i fabricación : Corea (South Korea) Part Number […]

This RAM is 30-pin 1MB SIMM produced by Hyundai Electronics industry(Hynix of now). 30-pin SIMMs were used universally from 80286 to 80486. If the number of chips is odd number, one of the chips perform parity check. This RAM is composed of two HY514400A(1M x 4bit) and one HY531000A(1M x 1bit). The memory capacity of […]