Fabricante : LG Semicon Co., Ltd. Ar ximha̲i fabricación : 'Bede ya pieza Corea jar Sur : ? Form Factor : SIMM Features : 72anclar, EDO DRAM, Non-Parity Memory Capacity : 16MB Bandwidth : 32bit Speed : 60Ns(Trac) Voltaje : 5V Chip Composition : GM71C17400CJ6 × 8 Chip Build Year/Week : 1998/27 One Chip Capacity : 4M […]

Product Name EK Memory 2GB DDR SO-DIMM PC2-5300 CL5 Part Number EKM256S74BP8-E6 Manufacturer EK Memory Country of Manufacture Taiwan Chip Build Year/Week 2008/27 Memory Module Type DDR2 SO-DIMM 200 pin Data Capacity 2GB Clock Speed 667Mhz (PC2-5300) Memory Timing CL=5, tRCD=5, tRP=5 Features 200pin Unbuffered Non-ECC Notebook(Laptop) Memory Data Bits x64 Data Chip info EK20908A8A-3EG […]

Product name Samsung 8GB DDR3 SDRAM PC3-12800 8GB DIMM (2Tx8, PC3-12800U-11-12-B1, M378B1G73QH0 — CK0) Manufacturer Samsung Electronics Country of manufacture Philippine Build year/week 2014/08 Data Capacity 8GB Clock speed 1600Mhz (PC3-12800) Memory Timing CL=11, tRCD=11, tRP=11 Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Production process technology 20, 30, 40nm Data bits x64 Internal Module banks 8 Ranks […]

The M368L6423DTM is 32M bit x 64 Double Data Rate(DDR) SDRAM high density memory module based on fifth genernation of 256Mb DDR SDRAM respectively. The M368L6423DTM consists of sixteen CMOS 32M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil) packages mounted on a 184pin glass-epoxy substrate. Four 0.1uF decoupling capacitors are […]

Samsung Electronics released DDR3 SDRAM modules using the 30nm process technology in July 2010. This RAM module was made by the 40nm process technology. Product name Samsung DDR3 SDRAM PC3-10600 4GB SO-DIMM (2Tx8, PC3-10600S-09-10-F2, M471B5273CH0-CH9) Fabricante: Samsung Electronics (SEC) Country of manufacture China Build year/week 2011/13 Ar mfeni datos: 4 GB, velocidad ora: 1333 MHz (PC3 — 10600) Memory Timing […]