Samsung 8GB DDR4 SDRAM UDIMM 1Rx8 PC4 — 21300 (PC4 — 2666V — UA2 — 11) (M378A1K43CB2 — CTD)

Publicado nge DeviceLog.com | Publicado jar DDR4 SDRAM | Publicado ar 2019-11-05

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SAMSUNG DDR4 SDRAM DIMM ar 8 ar GB (1Rx8_PC4 — 21300, PC4 — 2666V — UA2 — 11, 1828)

Thuhuu ar producto Samsung DDR4 SDRAM 8GB 1R×8 PC4-21300
(PC4 — 2666V — UA2 — 11)
Part Number M378A1K43CB2 — CTD
(C-die)
Fabricante Samsung Electrónica
Country of Manufacture Ntxinä
Build Year/Week 2018 / 28
DIMM type UDIMM
Ar mfeni datos 8GB
Data Rate
(Max Bandwidth)		 2666.67 MT/s
(21333.33 MB/s)
Memory Timing
(CL – tRCD – tRP – tRAS – tRC)		 19-19-19-43-61
Ya 'befi 288anclar, Unbuffer Non-ECC DDR4 SDRAM DIMM
Data Bits x 64
Internal Module Banks 16 Banks (4 Bank Groups)
Ranks 1 (Single Rank)
Component Composition (1G × 8) × 8
(K4A8G085WC-BCTD) × 8
Paquete 78FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
Altura 30milímetro
VDD Voltage 1.2V ± 0.06V
Rango mpat'i caja operación Average Refresh Period 7.8us at lower then TCASE 85℃,
3.9us at 85℃ < TCASE ≤ 95℃

 

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