Samsung 16GB DDR4 SDRAM UDIMM 2Rx8 PC4 — 21300 (PC4 — 2666V — UB1 — 11) (M378A2K43CB1 — CTD)
Publicado nge DeviceLog.com | Publicado jar DDR4 SDRAM | Publicado ar 2019-11-06
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Thuhuu ar producto | Samsung DDR4 SDRAM 16GB 2R×8 PC4-21300 (PC4 — 2666V — UB1 — 11) |
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Part Number | M378A2K43CB1 — CTD (C-die) |
Fabricante | Samsung Electrónica |
Country of Manufacture | Ntxinä |
Build Year/Week | 2019 / 06 |
DIMM type | UDIMM |
Ar mfeni datos | 16GB |
Data Rate (Max Bandwidth) |
2666.67 MT/s (21333.33 MB/s) |
Memory Timing (CL – tRCD – tRP – tRAS – tRC) |
19-19-19-43-61 |
Ya 'befi | 288anclar, Unbuffer Non-ECC DDR4 SDRAM DIMM |
Data Bits | x 64 |
Internal Module Banks | 16 Banks (4 Bank Groups) |
Ranks | 2 (Dual Rank) |
Component Composition | (1G × 8) × 16 (K4A8G085WC-BCTD) × 16 |
Paquete | 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) |
Altura | 31.25 milímetro |
VDD Voltage | 1.2 V ± 0.06 V |
Rango mpat'i caja operación | Average Refresh Period 7.8us at lower then TCASE 85℃, 3.9us at 85℃ < TCASE ≤ 95℃ |
Здравствуйте, Владельцы Samsung ОЗУ! Отпишитесь, по данной модели, как она с i3 10100f?