Samsung 256GB PM981 M.2 PCIe NVMe Performance OEM SSD (Onye njikwa Phoenix)

Samsung PM981 is the OEM product derived from Samsung 970 EVO.

This drive features Samsung’s new 64-layer V-NAND and a high-performance controller that delivers up to 3,000 MB/s of sequential read throughput and 270,000 random read IOPS.

Samsung Polaris V2 memory controller was used in the early version, but ARM Phoenix memory controller was used in the later version.

It was popular for a while because of its good value for money.

Product Name	Samsung 256GB PM981 M.2 PCIe NVMe Performance OEM SSD
Nọmba akụkụ	MZVLB256HAHQ-00000
Nlereanya	MZ-VLB2560
Realeased Year	2017
Onye nrụpụta	Samsung
Country of Manufacture	China
Product Classification	Internal SSD (Solid State Drive)
Ụdị Ihe	M.2 (2280)
Interface	PCIe 3.0 (x4) (32GT/s)
Host Controller Interface	NVMe 1.2
Catacity	256GB
Byte per Sector	512Byte
Memory Type	NAND Flash Memory, TLC
NAND Structure	Samsung V-NAND V4 (TLC 3D NAND, 64-layers)
DRAM	○
SLC Caching	○
Performance	– Sequential Read : 3000MB/s – Sequential Write : 1800MB/s – IOPS for read : Oke. 270k – IOPS for write : Oke. 420k
Memory Controller	ARM Phoenix (S4LR020 S821HNQD 1842 ARM Phoenix)
NVMe Heat Sink	not included
UBER	< 1 sector per 10 15 bits read
MTBF	1.5 Million Hours
Temperature	Na-arụ ọrụ : 0°C ~ 70°C Na-adịghị arụ ọrụ : -40Celsius C ~ 85 Celsius
Humidity (non-condensing)	Na-adịghị arụ ọrụ : 5 ~ 95%
Linear ujo	Na-adịghị arụ ọrụ (0.5ms duration with 1/2 sine wave) : 1,500 Gpeak
Mmaji	Na-adịghị arụ ọrụ (20 ~ 2,000 Hz, Sinusoidal) : 20 Gpeak
Voltage Ripple/Noise (max.)	100mV p-p
Power Consumption	– Read (Typ, RMS) : 5.9W – Write (Typ, RMS) : 5.7W – Na-abaghị uru (Typ) : 30mW – L1.2 (Typ) : 5mW
Width	22.00 ± 0.15 mm
Length	80.00 ± 0.15 mm
Ogologo	Oke. 2.38 mm
Ibu	Oke. 9.0g