Samsung 256GB PM981 M.2 PCIe NVMe Performance OEM SSD (Phoenix Controller)

Samsung PM981 yog cov khoom OEM muab los ntawm Samsung 970 EVO.

Cov tsav no nta Samsung tus tshiab 64-txheej V-NAND thiab tus tswj kev ua haujlwm siab uas xa mus rau 3,000 MB / s ntawm cov ntawv nyeem txuas ntxiv thiab 270,000 random nyeem IOPS.

Samsung Polaris V2 nco maub los tau siv nyob rau hauv thaum ntxov version, but ARM Phoenix memory controller was used in the later version.

It was popular for a while because of its good value for money.

Khoom npe	Samsung 256GB PM981 M.2 PCIe NVMe Performance OEM SSD
Tshooj Naj Npawb	MZVLB256HAHQ-00000
Model	MZ-VLB2560
Realeased Year	2017
Chaw tsim tshuaj paus	Samsung
Lub teb chaws tsim khoom	Tuam Tshoj
Product Classification	Internal SSD (Solid State Drive)
Form Factor	M.2 (2280)
Interface	PCIe 3.0 (x4) (32GT/s ib)
Host Controller Interface	NVMe 1.2
Catacity	256GB
Byte per Sector	512Byte
Memory Type	NAND Flash Memory, TLC
NAND Structure	Samsung V-NAND V4 (TLC 3D NAND, 64-txheej)
DRAM	○
SLC Caching	○
Performance	– Sequential Read : 3000MB/s – Sequential Write : 1800MB/s – IOPS for read : Max. 270k – IOPS for write : Max. 420k
Memory Controller	ARM Phoenix (S4LR020 S821HNQD 1842 ARM Phoenix)
NVMe Heat Sink	not included
UBER	< 1 sector per 10 15 bits read
MTBF	1.5 Million Hours
Temperature	Kev khiav haujlwm : 0°C ~ 70°C Tsis ua haujlwm : -40° C ~ 85 ° C
Humidity (non-condensing)	Tsis ua haujlwm : 5 ~ 95%
Linear Shock	Tsis ua haujlwm (0.5ms duration with 1/2 sine wave) : 1,500 Gpeak
Vibration	Tsis ua haujlwm (20 ~ 2,000 Hz, Sinusoidal) : 20 Gpeak
Voltage Ripple/Noise (max.)	100mV p-p
Kev siv fais fab	– Read (Typ, RMS) : 5.9W – Write (Typ, RMS) : 5.7W – Tsis ua haujlwm (Typ) : 30mW – L1.2 (Typ) : 5mW
Width	22.00 ± 0.15 mm
Length	80.00 ± 0.15 mm
Qhov siab	Max. 2.38 mm
Qhov hnyav	Max. 9.0g