Product name Samsung DDR3 SDRAM PC3-10600 2GB Memory (1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9 M378B5263DH1) Manufacturer Samsung Electronics Country of manufacture China Build year/week 2010/38 Data Capacity 2GB Clock speed 1333Mhz (PC3-10600) Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Production process technology 40nm Data bits x64 Internal Module banks 8 Cov ntaub ntawv chip muaj pes tsawg leeg [SEC HCH9 K4B2G0846C] ✕ 8 chips […]

Muaj ntau lub mainboards, txhawb thaum ntxov pentium CPU, feem ntau muaj sync cache nco chips li CPU L2 cache. Qhov no sync cache module(COAS; Cache Ntawm Ib Tug) yog lwm lub cim xeeb module siv ua ntxiv CPU L2 cache. Nws maximizes lub perfomance ntawm lub processor thaum lub processor yog tos rau cov lus qhia los yog cov ntaub ntawv. L2 cache is used for operating […]

A-DATA Viesta DDR600 Viesta Nco, hauv DDR SDRAM nco modules, thawj zaug ua tiav 600Mhz moos ceev nrog Samsung TCCD nco chips. Cov ntaub ntawv muaj peev xwm ntawm A-data Viesta yog 512MB lossis 256MB. Nws feem ntau yog siv rau ovcrclocking.   Product Name A-DATA Vitesta DDR600 512MB Part Number MDOSSLF3H47A0B1G0Z Manufacturer A-DATA Country of manufacture Taiwan Build Year 2004 Features 184pin Unbuffer […]

KMM591000AN-7 is composed two KM44C1000AJ-7 chips and one KM44C1000CJ-7 chip. KMM591000BN-7 is composed with two KM44C1000BJ-7 chips and one KM44C1000CJ-7 chip. They are 1MB DRAM SIMMs produced by Samsung Electronics. Manufacturing Company : Samsung Electronics Manufactured Year : 1992 / 1993 Lub teb chaws tsim khoom : South Korea Module Features : 30pin, SIMM, Parity RAM Memory Capacity […]

Khoom npe : ELPIDA 2GB 2Rx8 PC3-10600S-9-10-F1 Part Number : EBJ21UE8BFU0-DJ-F Manufacturer : ELPIDA Country of manufacture : Taiwan Build Year/Week : 2010/38 Form Factor : DDR3 SO-DIMM Features : 204pin, Non-ECC Memory Capacity : 2GB Max Data Rate : 1333Mbps Voltage : 1.5V Organization : 256M words × 64 bits, 2 ranks Chip Composition : J1108BFBG-DJ-F […]