Samsung 512MB PC3200 DDR SDRAM DIMM (CL3, RAM neo-fhìor)

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Samsung DDR 512MB PC3200U-30331-B2 CL3 (RAM neo-fhìor)

Samsung DDR 512MB PC3200U-30331-B2 CL3 underside (RAM neo-fhìor)

  • Ainm toraidh : Samsung DDR SDRAM 512MB PC3200 (non-genuine parts)
  • Part number : PC3200U-30331-B2 M368L6423ETM-CCC
  • Dèanadair : Samsung electronics (SEC)
  • Dùthaich saothrachaidh : Corea a-Deas
  • Build year/week : 2003/33
  • Comas Dàta : 512MB
  • Clock speed : 400Mhz (PC3200)
  • Feartan : 184prìne, Unbuffered Non-ECC DDR SDRAM DIMM
  • Data chip composition : [SEC K4H560838E-TCCC] 8 sgoltagan
  • Data banks : 4 banks
  • Refresh interval : 7.8μs (8K/64ms refresh)
  • Read latancy : 3 clock (CL3)
  • Burst length : 2, 4, 8
  • Burst type : sequential & interleave
  • Maximum burst refresh cycle : 8
  • VDD, VDDQ : 2.6V ± 0.1V

Comments (3)

Is this ddr 1???

Yes.

Thank you and good luck.

Sgrìobh beachd