Samsung 512MB PC3200 DDR SDRAM DIMM (CL3, non-genuine RAM)

tso tawm los ntawm DeviceLog.com | muab lo rau hauv DDR SDRAM | Muab lo rau 2013-03-13

3

Samsung DDR 512MB PC3200U-30331-B2 CL3 (non-genuine RAM)

Samsung DDR 512MB PC3200U-30331-B2 CL3 underside (non-genuine RAM)

  • Yam khoom lub npe : Samsung DDR SDRAM 512MB PC3200 (non-genuine parts)
  • naj npawb : PC3200U-30331-B2 M368L6423ETM-CCC
  • Manufacturer : Samsung Electronics (SEC)
  • Lub teb chaws ntawm manufacture : kaus lim qab teb
  • Tsim kom muaj xyoo/lub limtiam : 2003/33
  • Data Capacity : 512MB
  • Moos speed : 400Mhz (PC3200)
  • Nta : 184Pin, Unbuffered Non-ECC DDR SDRAM DIMM
  • Data chip composition : [SEC K4H560838E-TCCC] 8 chips
  • Data banks : 4 banks
  • Refresh interval : 7.8μs (8K/64ms refresh)
  • Read latancy : 3 clock (CL3)
  • Burst length : 2, 4, 8
  • Burst type : sequential & interleave
  • Maximum burst refresh cycle : 8
  • VDD, VDDQ : 2.6V ± 0.1V

Lus (3)

Is this ddr 1???

Yes.

Thank you and good luck.

Sau ib saib