Product name Samsung DDR3 SDRAM PC3-10600 2GB Memory (1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9 M378B5263DH1) Manufacturer Samsung Electronics Country of manufacture China Build year/week 2010/38 Data Capacity 2GB Clock speed 1333Mhz (PC3-10600) Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Production process technology 40nm Data bits x64 Internal Module banks 8 Data chip composition [SEC HCH9 K4B2G0846C] ✕ 8 chips […]

I-A-DATA Viesta DDR600 Viesta Memory, kumamojula wememori ye-DDR SDRAM, okokuqala ithole isivinini sewashi esingu-600Mhz nge-Samsung TCCD memory chips. Umthamo wedatha we-A-data Viesta wawungu-512MB noma u-256MB. Ikakhulukazi yayisetshenziselwa i-ovcrclocking.   Igama Lomkhiqizo A-DATA Vitesta DDR600 512MB Inombolo Yengxenye MDOSSLF3H47A0B1G0Z Umkhiqizi A-DATA Izwe lokukhiqiza I-Taiwan Build Year 2004 Ifaka i-184pin Unbuffer […]

I-KMM591000AN-7 yenziwe ama-chips amabili e-KM44C1000AJ-7 kanye ne-KM44C1000CJ-7 chip eyodwa.. I-KMM591000BN-7 ihlanganiswe nama-chips amabili we-KM44C1000BJ-7 kanye ne-KM44C1000CJ-7 chip eyodwa. Zingama-SIMM angu-1MB e-DRAM akhiqizwa abakwaSamsung Electronics. Inkampani Yokukhiqiza : I-Samsung Electronics Manufactured Year : 1992 / 1993 Izwe lokukhiqiza : Izici zeModyuli yaseNingizimu Korea : 30phini, I-SIMM, I-Parity RAM Inkumbulo Yamandla […]

Igama Lomkhiqizo : ELPIDA 2GB 2Rx8 PC3-10600S-9-10-F1 Part Number : EBJ21UE8BFU0-DJ-F Manufacturer : ELPIDA Country of manufacture : Taiwan Build Year/Week : 2010/38 Form Factor : DDR3 SO-DIMM Features : 204phini, Non-ECC Memory Capacity : 2GB Max Data Rate : 1333Mbps Voltage : 1.5V Organization : 256M words × 64 bits, 2 ranks Chip Composition : J1108BFBG-DJ-F […]

EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little. Umkhiqizi : Hyundai Electronics Industries Co., Ltd. Yakha Unyaka/Iviki : 1997/32 Izwe lokukhiqiza : Korea (INingizimu Korea) Inombolo Yengxenye […]