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	<title>K4B2G0846C &#8211; DeviceLog.com</title>
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		<title>三星2GB DDR3硬盤內存PC3-10600 1333Mhz (1Rx8, 中國)</title>
		<link>https://www.devicelog.com/yue/memory/dram/ddr3-sdram/samsung-ddr3-sdram-2gb-pc3-10600-1333mhz-1rx8-china/</link>
					<comments>https://www.devicelog.com/yue/memory/dram/ddr3-sdram/samsung-ddr3-sdram-2gb-pc3-10600-1333mhz-1rx8-china/#comments</comments>
		
		<dc:creator><![CDATA[DeviceLog.com]]></dc:creator>
		<pubDate>Wed, 09 Jan 2013 14:20:55 +0000</pubDate>
				<category><![CDATA[DDR3內存]]></category>
		<category><![CDATA[240針]]></category>
		<category><![CDATA[2國標]]></category>
		<category><![CDATA[中國]]></category>
		<category><![CDATA[DDR3]]></category>
		<category><![CDATA[內存]]></category>
		<category><![CDATA[K4B2G0846C]]></category>
		<category><![CDATA[非ECC]]></category>
		<category><![CDATA[PC3-10600]]></category>
		<category><![CDATA[公羊]]></category>
		<category><![CDATA[三星]]></category>
		<category><![CDATA[SDRAM]]></category>
		<guid isPermaLink="false">https://www.devicelog.com/?p=557-yue</guid>

					<description><![CDATA[Product name Samsung DDR3 SDRAM PC3-10600 2GB Memory (1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9 M378B5263DH1) Manufacturer Samsung Electronics Country of manufacture China Build year/week 2010/38 Data Capacity 2GB Clock speed 1333Mhz (PC3-10600) Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Production process technology 40nm Data bits x64 Internal Module banks 8 數據芯片組成 [美國證券交易委員會HCH9 K4B2G0846C] ✕ 8 芯片 [&#8230;]]]></description>
										<content:encoded><![CDATA[<p style="text-align: center;"><a href="https://www.devicelog.com/wp-content/uploads/2013/01/Samsung_DDR3_2GB_1Rx8_PC3-10600U-09-10-A0_M378B5773CH0-CH9_1038.jpg" data-rel="lightbox-gallery-v4aL2q7d" data-rl_title="Samsung DDR3 SDRAM 2GB 1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9" data-rl_caption=""><img fetchpriority="high" decoding="async" class="aligncenter size-medium wp-image-558" title="Samsung DDR3 SDRAM 2GB 1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9" src="https://www.devicelog.com/wp-content/uploads/2013/01/Samsung_DDR3_2GB_1Rx8_PC3-10600U-09-10-A0_M378B5773CH0-CH9_1038-500x274.jpg" alt="Samsung DDR3 SDRAM 2GB 1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9" width="500" height="274" srcset="https://www.devicelog.com/wp-content/uploads/2013/01/Samsung_DDR3_2GB_1Rx8_PC3-10600U-09-10-A0_M378B5773CH0-CH9_1038-500x274.jpg 500w, https://www.devicelog.com/wp-content/uploads/2013/01/Samsung_DDR3_2GB_1Rx8_PC3-10600U-09-10-A0_M378B5773CH0-CH9_1038-200x109.jpg 200w, https://www.devicelog.com/wp-content/uploads/2013/01/Samsung_DDR3_2GB_1Rx8_PC3-10600U-09-10-A0_M378B5773CH0-CH9_1038.jpg 1200w" sizes="(max-width: 500px) 100vw, 500px" /></a></p>
<table>
<tbody>
<tr>
<th>產品名稱</th>
<td>三星DDR3硬盤PC3-10600 2GB內存<br />
(1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9 M378B5263DH1)</td>
</tr>
<tr>
<th>製造者</th>
<td>三星電子</td>
</tr>
<tr>
<th>製造國</th>
<td>中國</td>
</tr>
<tr>
<th>建造年/周</th>
<td>2010/38</td>
</tr>
<tr>
<th>數據容量</th>
<td>2國標</td>
</tr>
<tr>
<th>時鐘速度</th>
<td>1333兆赫 (PC3-10600)</td>
</tr>
<tr>
<th>特徵</th>
<td>240針, 非緩衝非ECC DDR3內存內存</td>
</tr>
<tr>
<th>生產工藝技術</th>
<td>40納米</td>
</tr>
<tr>
<th>數據位</th>
<td>x64</td>
</tr>
<tr>
<th>內部糢塊組</th>
<td>8</td>
</tr>
<tr>
<th>數據芯片組成</th>
<td>[美國證券交易委員會HCH9 K4B2G0846C] ✕ 8 芯片</td>
</tr>
<tr>
<th>深度 / 位組織</th>
<td>256M / x8</td>
</tr>
<tr>
<th>組件修訂</th>
<td>4第代</td>
</tr>
<tr>
<th>包</th>
<td>FBGA (無鉛 &amp; 無鹵素)</td>
</tr>
<tr>
<th>高度</th>
<td>30毫米</td>
</tr>
<tr>
<th>VDD電壓</th>
<td>1.5V</td>
</tr>
<tr>
<th>工作案例溫度範圍</th>
<td>0°C ~ 85°C</td>
</tr>
</tbody>
</table>
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