Product name Samsung DDR3 SDRAM PC3-10600 2GB Memory (1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9 M378B5263DH1) Manufacturer Samsung Electronics Country of manufacture China Build year/week 2010/38 Data Capacity 2GB Clock speed 1333Mhz (PC3-10600) Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Production process technology 40nm Data bits x64 Internal Module banks 8 數據芯片組成 [美國證券交易委員會HCH9 K4B2G0846C] ✕ 8 芯片 […]

A-DATA Vitesta DDR600 Viesta Memory, in DDR SDRAM memory modules, firstly achieved 600Mhz clock speed with Samsung TCCD memory chips. The data capacity of A-data Viesta was 512MB or 256MB. It was mostly used for ovcrclocking.   Product Name A-DATA Vitesta DDR600 512MB Part Number MDOSSLF3H47A0B1G0Z Manufacturer A-DATA Country of manufacture Taiwan Build Year 2004 Features 184pin Unbuffer […]

KMM591000AN-7由兩個KM44C1000AJ-7芯片同一個KM44C1000CJ-7芯片組成. KMM591000BN-7由兩個KM44C1000BJ-7芯片同一個KM44C1000CJ-7芯片組成. 它們係三星電子生產嘅1MB DRAM SIMM. 製造公司 : 三星電子製造年份 : 1992 / 1993 製造國 : 韓國糢塊特點 : 30針, 西姆, 奇偶校驗RAM內存容量 […]

產品名稱 : ELPIDA 2GB 2Rx8 PC3-10600S-9-10-F1 Part Number : EBJ21UE8BFU0-DJ-F Manufacturer : ELPIDA Country of manufacture : Taiwan Build Year/Week : 2010/38 外形尺寸 : DDR3 SO-DIMM Features : 204針, Non-ECC Memory Capacity : 2GB Max Data Rate : 1333Mbps Voltage : 1.5V Organization : 256M words × 64 bits, 2 ranks Chip Composition : J1108BFBG-DJ-F […]

EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little. 製造者 : Hyundai Electronics Industries Co., 有限公司. 建造年份/周 : 1997/32 製造國 : 韓國 (韓國) 部件號 […]