Fabricante : LG Semicon Co., Ltd. Lu'uma' fabricación : Meyaj ku xéet Corea nojol : ? Factor beyo' : Yáantajo'ob ti' SIMM : 72anclar, EDO DRAM, Buka'aj u ba'al u memoria ma' paridad : 16MB Ancho u banda : 32Velocidad bits : 60Ns(Trac) Voltaje : 5Composición le chip V : GM71C17400CJ6 × 8 Fabricación chips ja'aba' leti' k'iino'ob : 1998/27 Buka'aj u ba'al u juntúul chip : 4M […]

Fabricante : Hyundai Electronics Industries Co., Ltd. Build Year : 1994 Lu'uma' fabricación : Meyaj ku xéet Corea nojol : HYM532100AM-70 Form Factor : SIMM Memory type : EDO DRAM Memory Capacity : 4MB Bus type : Fast Page Memory (FPM) Error correction : Non-parity Pins : 72pin Bandwidth : 32bit Latency : 70Ns (Trac) Voltaje […]

EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little. Fabricante : Hyundai Electronics Industries Co., Ltd. Ja'aba' leti' k'iino'ob u construcción : 1997/32 Lu'uma' fabricación : Corea (South Korea) Meyaj ku xéet […]