Fabricante : Hyundai Electronics Industries Co., Ltd. Build Year : 1994 Lu'uma' fabricación : Meyaj ku xéet Corea nojol : HYM532100AM-70 Form Factor : SIMM Memory type : EDO DRAM Memory Capacity : 4MB Bus type : Fast Page Memory (FPM) Error correction : Non-parity Pins : 72pin Bandwidth : 32bit Latency : 70Ns (Trac) Voltaje […]

K'aaba' le producto : EKmemory DDR3 SDRAM 2GB 2Rx8 PC3-10600U-9-10-B0 Manufacturer : EKmemory Country of manufacture : South Korea Data Capacity : 2GB Clock speed : 1333Mhz (PC3-10600) Noj : 240anclar, Unbuffer Non-ECC DDR3 SDRAM DIMM Data chip composition : [EKM324L28BP8-13] ✕ 16 chips VDD voltage : 1.5V Homepage : http://www.ekmemory.com/bbs/view.php?id=dram&no=91

KMM591000AN-7 is composed two KM44C1000AJ-7 chips and one KM44C1000CJ-7 chip. KMM591000BN-7 is composed with two KM44C1000BJ-7 chips and one KM44C1000CJ-7 chip. They are 1MB DRAM SIMMs produced by Samsung Electronics. Manufacturing Company : Samsung Electronics Manufactured Year : 1992 / 1993 Lu'uma' fabricación : South Korea Module Features : 30anclar, SIMM, Parity RAM Memory Capacity […]

EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little. Fabricante : Hyundai Electronics Industries Co., Ltd. Ja'aba' leti' k'iino'ob u construcción : 1997/32 Lu'uma' fabricación : Corea (South Korea) Meyaj ku xéet […]

This RAM is 30-pin 1MB SIMM produced by Hyundai Electronics industry(Hynix of now). 30-pin SIMMs were used universally from 80286 to 80486. If the number of chips is odd number, one of the chips perform parity check. This RAM is composed of two HY514400A(1M x 4bit) and one HY531000A(1M x 1bit). The memory capacity of […]