DDR4 SDRAM – DeviceLog.com https://www.devicelog.com/tl/ device, part, spec Wed, 06 Nov 2019 11:16:37 +0000 tl hourly 1 https://wordpress.org/?v=6.6.2 Samsung 16GB DDR4 SDRAM UDIMM 2Rx8 PC4-21300 (PC4-2666V-UB1-11) (M378A2K43CB1-CTD) https://www.devicelog.com/tl/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/ https://www.devicelog.com/tl/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/#comments Wed, 06 Nov 2019 07:38:24 +0000 https://www.devicelog.com/?p=1233-tl SAMSUNG DDR4 SDRAM 16GB PC4-21300 1906

pangalan ng Produkto Samsung DDR4 SDRAM 16GB 2R × 8 PC4-21300
(PC4-2666V-UB1-11)
Bahagi ng Bahagi M378A2K43CB1-CTD
(C-ang)
Tagagawa Samsung Electronics
bansa ng pagawaan China
Buuin ang Taon / Linggo 2019 / 06
Uri ng DIMM UDIMM
Kapasidad ng Data 16GB
Rate ng Data
(Max Bandwidth)		 2666.67 MT / s
(21333.33 MB / s)
Timing ng memorya
(CL – tRCD – tRP – pagkatapos – tRC)		 19-19-19-43-61
Mga Tampok 288pin, Unbuffer Non-ECC DDR4 SDRAM DIMM
Mga Bits ng Data x64
Mga Panloob na Bangko ng Modyul 16 Mga Bangko (4 Mga Pangkat ng Bangko)
Mga ranggo 2 (Dalawang Ranggo)
Komposisyon ng Bahagi (1G × 8) × 16
(K4A8G085WC-BCTD) × 16
Pakete 78FBGA na may Lead-Free & Walang halogen
(Sumusunod sa RoHS)
Taas 31.25 mm
VDD Boltahe 1.2 V ± 0.06 V
Saklaw ng Saklaw ng Operating Case Average na Panahon ng Pag-refresh 7.8us sa mas mababa pagkatapos ng TKASO 85℃,
3.9sa amin sa 85 ℃ < TKASO ≤ 95 ℃

 

]]> https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/feed/ 1 Samsung 8GB DDR4 SDRAM UDIMM 1Rx8 PC4-21300 (PC4-2666V-UA2-11) (M378A1K43CB2-CTD) https://www.devicelog.com/tl/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/ https://www.devicelog.com/tl/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/#respond Tue, 05 Nov 2019 11:07:57 +0000 https://www.devicelog.com/?p=1215-tl SAMSUNG DDR4 SDRAM 8GB DIMM (1Rx8_PC4-21300, PC4-2666V-UA2-11, 1828)

pangalan ng Produkto Samsung DDR4 SDRAM 8GB 1R×8 PC4-21300
(PC4-2666V-UA2-11)
Bahagi ng Bahagi M378A1K43CB2-CTD
(C-ang)
Tagagawa Samsung Electronics
bansa ng pagawaan China
Buuin ang Taon / Linggo 2018 / 28
Uri ng DIMM UDIMM
Kapasidad ng Data 8GB
Rate ng Data
(Max Bandwidth)		 2666.67 MT / s
(21333.33 MB / s)
Timing ng memorya
(CL – tRCD – tRP – pagkatapos – tRC)		 19-19-19-43-61
Mga Tampok 288pin, Unbuffer Non-ECC DDR4 SDRAM DIMM
Mga Bits ng Data x64
Mga Panloob na Bangko ng Modyul 16 Mga Bangko (4 Mga Pangkat ng Bangko)
Mga ranggo 1 (Single Rank)
Komposisyon ng Bahagi (1G × 8) × 8
(K4A8G085WC-BCTD) × 8
Pakete 78FBGA na may Lead-Free & Walang halogen
(Sumusunod sa RoHS)
Taas 30mm
VDD Boltahe 1.2V ± 0.06V
Saklaw ng Saklaw ng Operating Case Average na Panahon ng Pag-refresh 7.8us sa mas mababa pagkatapos ng TKASO 85℃,
3.9sa amin sa 85 ℃ < TKASO ≤ 95 ℃

 

]]> https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/feed/ 0