Samsung 1MB драм 30pin SIMM

Интишор аз ҷониби DeviceLog.com | Интишоршуда дар DRAM аслӣ | Нашр шудааст 2012-05-18

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Samsung 1MB Dram Simm Backside (Кмм5911000-7, KMM591000bn-7) (KM44C1000AJ-7, KM44C1000bj-7)

Samsung 1MB Dram Simm Backside (Кмм5911000-7, KMM591000bn-7) (KM44C1000AJ-7, KM44C1000bj-7)

KMM591000-7 ду км44c1000aj-7 ва як км44c1000 дар 7 чипта иборат аст. KMM591000bn-7 бо ду км44c1000b1000bj-7-и микросхемаҳо ва як км44c1000.. Онҳо 1MB Dram SIMMS мебошанд, ки аз ҷониби Samsung Electronics.

  • Ширкати истеҳсолӣ : Samsung Elecrimons
  • Manufactured Year : 1992 / 1993
  • Кишвари истеҳсолот : Кореяи Ҷанубӣ
  • Module Features : 30пин, Силим, Parity RAM
  • Memory Capacity : 1MB
  • BandWidth : 8сулущ
  • Speed Feature : 70ns(трамв)
  • Chip Composition :
    KMM591000AN-7 = KM44C1000AJ-7 × 2 + KM44C1000CJ-7
    KMM591000BN-7 = KM44C1000BJ-7 × 2 + KM44C1000CJ-7

Заметки марбут:

Hyundai 30-pin 1MB SIMM (HY514400A × 2 + HT531000A)Hyundai 1MB DRAM 30pin SIMM Goldstar 30pin 1MB DRAM SIMM (GM71C4400A+GMC71C1000) (пешҳо)Goldstar 1MB DRAM 30pin SIMM (GM71C4400A + GMC71C1000) Goldstar 30pin 1MB DRAM SIMM (GM71C4400B + GMC71C1000B) (пешҳо)Goldstar 1MB DRAM 30pin SIMM (GM71C4400B + GMC71C1000B) Hyundai 72PIN 16MB 16MB Dram Simm Hys Hys Hys5117404b (Тарафи пеш)Hyundai 16mb Ed Edo Edection 72pin Simm (Hym532414) Hyundai 4MB Ed Ed Edo Cram 72P SIMMM (Hym132100am-70) LGS GM71C17400CJ6 16MB Edo-Dram Simm FirstsideLG Semicon 16MB EDO-DRAM 72pin SIMM (GM71C17400CJ6) Samsung 4GB PC3-10600 DDR3 DDRRAM SDRAM Samsung DDR SDRAM 256MB PCED700 DIMM (M368L642323DTM)Samsung 512MB PC2700 DDR SDRM DIDM (M368L642323DTM) Samsung 8GB DDRRANG SDRRAM 2R × 8 PC 33-12800U-11-12-B1 M378B1G73QH1G73QH1G73QH1G73QH0 1408Samsung 8GB PC3-12800 DDR3 SDRM DIDM (2Р × 8, M378B1G73QH0-CK0)
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tài liệu tự học kế toán гуфт 2018-08-17

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