DRAM – DeviceLog.com https://www.devicelog.com device, part, spec Mon, 11 Jul 2022 17:33:11 +0000 en-US hourly 1 https://wordpress.org/?v=6.6.2 LG Semicon 16MB EDO-DRAM 72pin SIMM (GM71C17400CJ6) https://www.devicelog.com/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/ https://www.devicelog.com/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/#comments Mon, 11 Jul 2022 15:05:31 +0000 https://www.devicelog.com/?p=1336 LGS GM71C17400CJ6 16MB EDO-DRAM SIMM frontsideLGS GM71C17400CJ6 16MB EDO-DRAM SIMM backside

  • Manufacturer : LG Semicon Co., Ltd.
  • Country of manufacture : South Korea
  • Part Number : ?
  • Form Factor : SIMM
  • Features : 72pin, EDO DRAM, Non-Parity
  • Memory Capacity : 16MB
  • Bandwidth : 32bit
  • Speed : 60ns(tRAC)
  • Voltage : 5V
  • Chip Composition : GM71C17400CJ6 × 8
  • Chip Build Year/Week : 1998/27
  • One Chip Capacity : 4M x 4bit
  • Etc : Addonics®, SD816
]]> https://www.devicelog.com/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/feed/ 1 EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6 https://www.devicelog.com/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/ https://www.devicelog.com/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/#respond Tue, 23 Mar 2021 10:30:05 +0000 https://www.devicelog.com/?p=1311 EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6

Product Name EK Memory 2GB DDR SO-DIMM PC2-5300 CL5
Part Number EKM256S74BP8-E6
Manufacturer EK Memory
Country of Manufacture Taiwan
Chip Build Year/Week 2008/27
Memory Module Type DDR2 SO-DIMM 200 pin
Data Capacity 2GB
Clock Speed 667Mhz (PC2-5300)
Memory Timing CL=5, tRCD=5, tRP=5
Features 200pin
Unbuffered
Non-ECC
Notebook(Laptop) Memory
Data Bits x64
Data Chip info EK20908A8A-3EG
20827
XCG248-UA3G
Package FBGA (Fine-pitch BGA)
VDD Voltage 1.8V

 

]]> https://www.devicelog.com/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/feed/ 0 Samsung 8GB PC3-12800 DDR3 SDRAM DIMM (2R×8, M378B1G73QH0-CK0) https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-8gb-ddr3-sdram-pc3-12800u-11-12-b1-2rx8-m378b1g73qh0-ck0/ https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-8gb-ddr3-sdram-pc3-12800u-11-12-b1-2rx8-m378b1g73qh0-ck0/#comments Fri, 20 Mar 2015 05:46:58 +0000 https://www.devicelog.com/?p=902 Samsung 8GB DDR3 SDRAM 2R×8 PC3-12800U-11-12-B1 M378B1G73QH0-CK0 1408

Product name Samsung 8GB DDR3 SDRAM PC3-12800 8GB DIMM
(2Rx8, PC3-12800U-11-12-B1, M378B1G73QH0-CK0)
Manufacturer Samsung Electronics
Country of manufacture Philippine
Build year/week 2014/08
Data Capacity 8GB
Clock speed 1600Mhz (PC3-12800)
Memory Timing CL=11, tRCD=11, tRP=11
Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM
Production process technology 20, 30, 40nm
Data bits x64
Internal Module banks 8
Ranks 2
Data chip composition
(Depth × Bit organization × pcs)		 512M×8 × 16 pcs
(K4B4G0846Q-HCK0 × 16 pcs)
Package
78 FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
Height 30mm
VDD voltage 1.5V ± 0.075V
Operating Case Temperature Range 0°C ~ 95°C

 

]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-8gb-ddr3-sdram-pc3-12800u-11-12-b1-2rx8-m378b1g73qh0-ck0/feed/ 4 Samsung 512MB PC2700 DDR SDRAM DIMM (M368L6423DTM) https://www.devicelog.com/memory/dram/ddr-sdram/samsung-ddr-sdram-pc2700-512mb-dimm-m368l6423dtm/ https://www.devicelog.com/memory/dram/ddr-sdram/samsung-ddr-sdram-pc2700-512mb-dimm-m368l6423dtm/#respond Tue, 03 Mar 2015 08:45:43 +0000 https://www.devicelog.com/?p=814 The M368L6423DTM is 32M bit x 64 Double Data Rate(DDR) SDRAM high density memory module based on fifth genernation of 256Mb DDR SDRAM respectively. The M368L6423DTM consists of sixteen CMOS 32M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil) packages mounted on a 184pin glass-epoxy substrate. Four 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each DDR SDRAM. The M368L6423DTM Dual In-line Memory Module and is intended for mounting into 184pin edge connector sockets.

Samsung DDR SDRAM 256MB PC2700 DIMM (M368L6423DTM) Samsung DDR SDRAM 256MB PC2700 DIMM (M368L6423DTM)

Product name Samsung DDR SDRAM PC2700 512MB DIMM
(PC2700U-25331B2, M368L6423DTM)
Manufacturer Samsung Electronics
Country of manufacture Korea
Build year/week 2003/12
Data Capacity 512MB
Clock speed 166Mhz (PC2700, DDR333)
Memory Timing CL=2.5
Features 184pin, DIMM, Unbuffer Non-ECC DDR SDRAM
Size 133.35mm × 31.75mm
Data bits 64bit
Internal Module banks 4
Data chip composition K4H560838D-TCB3 × 16
(32M × 8bit × 16chips)
Package TSOP-II
VDD voltage 2.5V ± 0.2V
Operating Case Temperature Range 0°C ~ 85°C
]]> https://www.devicelog.com/memory/dram/ddr-sdram/samsung-ddr-sdram-pc2700-512mb-dimm-m368l6423dtm/feed/ 0 Samsung 4GB PC3-10600 DDR3 SDRAM SO-DIMM https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/ https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/#comments Mon, 02 Mar 2015 13:25:48 +0000 https://www.devicelog.com/?p=791 Samsung Electronics released DDR3 SDRAM modules using the 30nm process technology in July 2010. This RAM module was made by the 40nm process technology.

Samsung SODIMM DDR3 PC3-10600 4GB frontside Samsung SODIMM DDR3 PC3-10600 4GB rearside

Product name Samsung DDR3 SDRAM PC3-10600 4GB SO-DIMM
(2Rx8, PC3-10600S-09-10-F2, M471B5273CH0-CH9)
Manufacturer Samsung Electronics (SEC)
Country of manufacture China
Build year/week 2011/13
Data Capacity 4GB
Clock speed 1333Mhz (PC3-10600)
Memory Timing CL=9, tRCD=9, tRP=9
Features 204pin, SODIMM, Unbuffer Non-ECC DDR3 SDRAM
Production process technology 40nm
Data bits x64
Internal Module banks 8
Ranks 2
Data chip composition 256M x 8 * 16 pcs
Component revision 2Gb, C-die
Package 78 ball FBGA
Height 30mm
VDD voltage 1.5V
Operating Case Temperature Range 0°C ~ 85°C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/feed/ 3 Hyundai 4MB EDO DRAM 72pin SIMM (HYM532100AM-70) https://www.devicelog.com/memory/dram/edo-dram/hyundai-72pin-4mb-edo-dram-simm-hym532100am-70/ https://www.devicelog.com/memory/dram/edo-dram/hyundai-72pin-4mb-edo-dram-simm-hym532100am-70/#respond Fri, 15 Mar 2013 07:26:42 +0000 https://www.devicelog.com/?p=739 Hyundai 72pin 4MB EDO DRAM HYM532100AM-70 70ns Fast Page non-Parity SIMM

Hyundai 72pin 4MB EDO DRAM HYM532100AM-70 70ns Fast Page non-Parity SIMM

  • Manufacturer : Hyundai Electronics Industries Co., Ltd.
  • Build Year : 1994
  • Country of manufacture : South Korea
  • Part Number : HYM532100AM-70
  • Form Factor : SIMM
  • Memory type : EDO DRAM
  • Memory Capacity : 4MB
  • Bus type : Fast Page Memory (FPM)
  • Error correction : Non-parity
  • Pins : 72pin
  • Bandwidth : 32bit
  • Latency : 70ns (tRAC)
  • Voltage : 5V
  • Chip Composition : [HY514400A J-70] × 8
  • One Chip Capacity : 1M x 4bit
]]> https://www.devicelog.com/memory/dram/edo-dram/hyundai-72pin-4mb-edo-dram-simm-hym532100am-70/feed/ 0 EKmemory 2GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (2Rx8) https://www.devicelog.com/memory/dram/ddr3-sdram/ekmemory-ddr3-2gb-pc3-10600-1333mhz-2rx8/ https://www.devicelog.com/memory/dram/ddr3-sdram/ekmemory-ddr3-2gb-pc3-10600-1333mhz-2rx8/#comments Sun, 03 Mar 2013 06:14:35 +0000 https://www.devicelog.com/?p=643 EKmemory DDR3 2GB PC3-10600 1333Mhz (2Rx8) frontside

EKmemory DDR3 2GB PC3-10600 1333Mhz (2Rx8) backside

  • Product name : EKmemory DDR3 SDRAM 2GB 2Rx8 PC3-10600U-9-10-B0
  • Manufacturer : EKmemory
  • Country of manufacture : South Korea
  • Data Capacity : 2GB
  • Clock speed : 1333Mhz (PC3-10600)
  • Features : 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM
  • Data chip composition : [EKM324L28BP8-13] ✕ 16 chips
  • VDD voltage : 1.5V
  • Homepage : http://www.ekmemory.com/bbs/view.php?id=dram&no=91

EKmemory_DDR3_2GB_2Rx8_PC3-10600U-9-10-B0_package

]]> https://www.devicelog.com/memory/dram/ddr3-sdram/ekmemory-ddr3-2gb-pc3-10600-1333mhz-2rx8/feed/ 1 Samsung 1MB DRAM 30pin SIMM https://www.devicelog.com/memory/dram/original-dram/samsung-30pin-1mb-dram-simm/ https://www.devicelog.com/memory/dram/original-dram/samsung-30pin-1mb-dram-simm/#comments Fri, 18 May 2012 11:01:28 +0000 https://www.devicelog.com/?p=326
Samsung 1MB DRAM SIMM backside (KMM591000AN-7, KMM591000BN-7) (KM44C1000AJ-7, KM44C1000BJ-7)

Samsung 1MB DRAM SIMM backside (KMM591000AN-7, KMM591000BN-7) (KM44C1000AJ-7, KM44C1000BJ-7)

KMM591000AN-7  is composed two KM44C1000AJ-7 chips and one KM44C1000CJ-7 chip.  KMM591000BN-7  is composed with two KM44C1000BJ-7 chips and one KM44C1000CJ-7 chip. They are 1MB DRAM SIMMs produced by Samsung Electronics.

  • Manufacturing Company : Samsung Electronics
  • Manufactured Year : 1992 / 1993
  • Country of manufacture : South Korea
  • Module Features : 30pin, SIMM, Parity RAM
  • Memory Capacity : 1MB
  • BandWidth : 8bit
  • Speed Feature : 70ns(tRAC)
  • Chip Composition :
    KMM591000AN-7 = KM44C1000AJ-7 × 2 + KM44C1000CJ-7
    KMM591000BN-7 = KM44C1000BJ-7 × 2 + KM44C1000CJ-7
]]> https://www.devicelog.com/memory/dram/original-dram/samsung-30pin-1mb-dram-simm/feed/ 1 Hyundai 16MB EDO DRAM 72pin SIMM (HYM532414) https://www.devicelog.com/memory/dram/edo-dram/hyundai-72pin-16mb-edo-dram-simm-hym532414/ https://www.devicelog.com/memory/dram/edo-dram/hyundai-72pin-16mb-edo-dram-simm-hym532414/#comments Thu, 04 Aug 2011 13:39:13 +0000 https://www.devicelog.com/?p=110 EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little.

Hyundai 72pin 16MB DRAM SIMM HYM532414 (Frontside)

Hyundai 72pin 16MB DRAM SIMM HYM532414 (Backside)

  • Manufacturer : Hyundai Electronics Industries Co., Ltd.
  • Build Year/Week : 1997/32
  • Country of manufacture : Korea (South Korea)
  • Part Number : HYM532414 BM-60
  • Form Factor : SIMM
  • Features : 72pin, EDO DRAM, Non-Parity
  • Memory Capacity : 16MB
  • Bandwidth : 32bit
  • Speed : 60ns(tRAC)
  • Voltage : 5V
  • Chip Composition : HY5117404B(J-60) × 8
  • One Chip Capacity : 4M x 4bit
]]> https://www.devicelog.com/memory/dram/edo-dram/hyundai-72pin-16mb-edo-dram-simm-hym532414/feed/ 1 Hyundai 1MB DRAM 30pin SIMM https://www.devicelog.com/memory/dram/original-dram/hyundai-30pin-1mb-dram-simm/ https://www.devicelog.com/memory/dram/original-dram/hyundai-30pin-1mb-dram-simm/#comments Mon, 01 Aug 2011 16:12:29 +0000 https://www.devicelog.com/?p=5 This RAM is 30-pin 1MB SIMM produced by Hyundai Electronics industry(Hynix of now). 30-pin SIMMs were used universally from 80286 to 80486. If the number of chips is odd number, one of the chips perform parity check.

This RAM is composed of two HY514400A(1M x 4bit) and one HY531000A(1M x 1bit). The memory capacity of the RAM is 1MB. HY531000A is data chip, and HY531000A is parity chip.

Hyundai 30-pin 1MB SIMM (HY514400A × 2 + HT531000A)

  • Manufacturer : Hyundai Electronics Industries Co., Ltd.
  • Manufactured Year : 1993
  • Product Features : 30-pin, DRAM SIMM, Parity RAM
  • Memory Capacity : 1MB
  • Bandwidth : 8bit
  • Speed Feature : 70ns(tRAC)
  • Chip Composition : HY514400A × 2 + HY531000A (4×2 + 1 bits)
]]> https://www.devicelog.com/memory/dram/original-dram/hyundai-30pin-1mb-dram-simm/feed/ 1