M378A1K43CB2 – DeviceLog.com https://www.devicelog.com/sw/ device, part, spec Wed, 06 Nov 2019 09:43:31 +0000 sw hourly 1 https://wordpress.org/?v=6.6.2 Samsung 8GB DDR4 SDRAM UDIMM 1Rx8 PC4-21300 (PC4-2666V-UA2-11) (M378A1K43CB2-CTD) https://www.devicelog.com/sw/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/ https://www.devicelog.com/sw/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/#respond Tue, 05 Nov 2019 11:07:57 +0000 https://www.devicelog.com/?p=1215-sw SAMSUNG DDR4 SDRAM 8GB DIMM (1Rx8_PC4-21300, PC4-2666V-UA2-11, 1828)

Jina la bidhaa Samsung DDR4 SDRAM 8GB 1R×8 PC4-21300
(PC4-2666V-UA2-11)
Nambari ya Sehemu M378A1K43CB2-CTD
(C-the)
Mtengenezaji Samsung Electronics
Nchi ya Utengenezaji China
Jenga Mwaka/Wiki 2018 / 28
Aina ya DIMM UDIMM
Uwezo wa Data 8GB
Kiwango cha Data
(Max Bandwidth)		 2666.67 MT/s
(21333.33 MB/s)
Muda wa Kumbukumbu
(CL – tRCD – tRP – baada ya – tRC)		 19-19-19-43-61
Vipengele 288pini, Ondoa Non-ECC DDR4 SDRAM DIMM
Biti za Data x64
Mabenki ya Moduli ya Ndani 16 Benki (4 Vikundi vya Benki)
Vyeo 1 (Cheo Kimoja)
Muundo wa Kipengele (1G × 8) × 8
(K4A8G085WC-BCTD) × 8
Kifurushi 78FBGA yenye Lead-Free & Bila Halojeni
(RoHS inatii)
Urefu 30mm
Voltage ya VDD 1.2V ± 0.06V
Kiwango cha Halijoto cha Uendeshaji Wastani wa Kipindi cha Kuonyesha upya 7.8us chini kisha TKESI 85℃,
3.9sisi katika 85 ℃ < TKESI ≤ 95℃

 

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