4GB – DeviceLog.com https://www.devicelog.com/sw/ device, part, spec Sat, 04 Jun 2016 15:07:22 +0000 sw hourly 1 https://wordpress.org/?v=6.6.2 Samsung 4GB PC3-10600 DDR3 SDRAM SO-DIMM https://www.devicelog.com/sw/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/ https://www.devicelog.com/sw/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/#comments Mon, 02 Mar 2015 13:25:48 +0000 https://www.devicelog.com/?p=791-sw Samsung Electronics ilitoa moduli za DDR3 SDRAM kwa kutumia teknolojia ya mchakato wa 30nm mwezi Julai 2010. This RAM module was made by the 40nm process technology.

Samsung SODIMM DDR3 PC3-10600 4GB frontside Samsung SODIMM DDR3 PC3-10600 4GB rearside

Jina la bidhaa Samsung DDR3 SDRAM PC3-10600 4GB SO-DIMM
(2Rx8, PC3-10600S-09-10-F2, M471B5273CH0-CH9)
Mtengenezaji Samsung Electronics (SEC)
Nchi ya utengenezaji China
Jenga mwaka/wiki 2011/13
Uwezo wa Data 4GB
Kasi ya saa 1333Mhz (PC3-10600)
Muda wa Kumbukumbu CL=9, TRCD = 9, tRP=9
Vipengele 204pini, SODIMM, Ondoa Non-ECC DDR3 SDRAM
Teknolojia ya mchakato wa uzalishaji 40nm
Vipande vya data x64
Benki za moduli za ndani 8
Vyeo 2
Muundo wa chip ya data 256M x 8 * 16 pcs
Marekebisho ya sehemu 2Gb, C-the
Kifurushi 78 mpira FBGA
Urefu 30mm
Voltage ya VDD 1.5V
Kiwango cha Halijoto cha Uendeshaji 0°C ~ 85°C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/feed/ 3 Samsung 4GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (2Rx8, Korea) https://www.devicelog.com/sw/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/ https://www.devicelog.com/sw/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/#respond Thu, 10 Jan 2013 02:20:09 +0000 https://www.devicelog.com/?p=602-sw Samsung DDR3 SDRAM 4GB Memory DIMM (2Rx8 PC3-10600U-09-11-B1 M378B5273DH0-CH9 1131)

Jina la bidhaa Kumbukumbu ya Samsung 4GB DDR3 SDRAM PC3-10600
(2Rx8, PC3-10600U-09-10-A0, M378B5273DH0-CH9, M378B5273DH1)
Mtengenezaji Samsung Electronics (SEC)
Nchi ya utengenezaji Korea Kusini
Jenga mwaka/wiki 2011/31
Uwezo wa Data 4GB
Kasi ya saa 1333Mhz (PC3-10600)
Muda wa Kumbukumbu CL=9, TRCD = 9, tRP=9
Vipengele 240pini, UNBUFFER NON-ECC DDR3 SDRAM DIMM
Vipande vya data x64
Kina / Shirika kidogo 512M / x8
Benki za moduli za ndani 8
Vyeo 2
Muundo wa chip ya data [SEC HCH9 K4B2G0846D] ✕ 16 chips
(256Mbiti ✕ 8 ✕ 16 pcs)
Marekebisho ya sehemu 4kizazi
Kifurushi FBGA (Bure-bure & Halogen-bure)
Urefu 30mm
Voltage ya VDD 1.5V
Kiwango cha Halijoto cha Uendeshaji 0°C ~ 85°C
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