Samsung 1MB DRAM 30pin SIMM

Imetumwa na DeviceLog.com | Imechapishwa DRAM asili | Iliyotumwa kwenye 2012-05-18

1

Samsung 1MB DRAM SIMM nyuma (KMM591000AN-7, KMM591000BN-7) (KM44C1000AJ-7, KM44C1000BJ-7)

Samsung 1MB DRAM SIMM nyuma (KMM591000AN-7, KMM591000BN-7) (KM44C1000AJ-7, KM44C1000BJ-7)

KMM591000AN-7 imeundwa KM44C1000AJ-7 chips na moja KM44C1000CJ-7 Chip. KMM591000BN-7 imeundwa na chips mbili za KM44C1000BJ-7 na chip moja ya KM44C1000CJ-7. Ni 1MB DRAM Simms zinazozalishwa na Samsung Electronics.

  • Kampuni ya Viwanda : Samsung Electronics
  • Mwaka uliotengenezwa : 1992 / 1993
  • Nchi ya utengenezaji : Korea Kusini
  • Module Features : 30pini, SIMM, RAM ya usawa
  • Uwezo wa Kumbukumbu : 1MB
  • BandWidth : 8kidogo
  • Kipengele cha kasi : 70ns(TRAC)
  • Muundo wa Chip :
    KMM591000AN-7 = KM44C1000AJ-7 × 2 + KM44C1000CJ-7
    KMM591000BN-7 = KM44C1000BJ-7 × 2 + KM44C1000CJ-7

Machapisho yanayohusiana:

Hyundai 30-pini 1MB SIMM (HY514400A × 2 + HT531000A)Hyundai 1MB DRAM 30pin SIMM Goldstar 30pin 1MB DRAM SIMM (GM71C4400A+GMC71C1000) (mbele)Goldstar 1MB DRAM 30pin SIMM (GM71C4400A + GMC71C1000) Goldstar 30pin 1MB DRAM SIMM (GM71C4400B + GMC71C1000B) (mbele)Goldstar 1MB DRAM 30pin SIMM (GM71C4400B + GMC71C1000B) Hyundai 72pin 16MB DRAM SIMM HY5117404B (Upande wa mbele)Hyundai 16MB EDO DRAM 72pin SIMM (HYM532414) Hyundai 4MB EDO DRAM 72pin SIMM (HYM532100AM-70) LGS GM71C17400CJ6 16MB EDO-DRAM mbele ya SIMMLG Semicon 16MB EDO-DRAM 72pin SIMM (GM71C17400CJ6) Samsung 4GB PC3-10600 DDR3 SDRAM SO-DIMM Samsung DDR SDRAM 256MB PC2700 DIMM (M368L6423DTM)Samsung 512MB PC2700 DDR SDRAM DIMM (M368L6423DTM) Samsung 8GB DDR3 SDRAM 2R×8 PC3-12800U-11-12-B1 M378B1G73QH0-CK0 1408Samsung 8GB PC3-12800 DDR3 SDRAM DIMM (2R×8, M378B1G73QH0-CK0)
Lebo:, , , , , , , , , ,

Maoni (1)

tài liệu tự học kế toán Alisema 2018-08-17

Hello.This article was really fascinating, particularly because I was browsing for thoughts on this
subject last Wednesday.

Jibu

Andika maoni