Samsung 256GB PM981 M.2 PCIe NVMe Fa'atinoga OEM SSD (Phoenix Pule)

Samsung PM981 o le oloa OEM na maua mai Samsung 970 EVO.

O lenei taʻavale e faʻaalia ai le 64-layer V-NAND fou a Samsung ma se faʻatonuga maualuga e tuʻuina atu i 3,000 MB/s o fa'asologa faitau faitau ma 270,000 faitau fa'afuase'i IOPS.

Samsung Polaris V2 memory controller na faʻaaogaina i le amataga, but ARM Phoenix memory controller was used in the later version.

It was popular for a while because of its good value for money.

Igoa Oloa	Samsung 256GB PM981 M.2 PCIe NVMe Fa'atinoga OEM SSD
Numera Vaega	MZVLB256HAHQ-00000
Model	MZ-VLB2560
Realeased Year	2017
Tufuga	Samsung
Atunuu o Gaosi Mea	Saina
Product Classification	Internal SSD (Solid State Drive)
Fa'ailoga Fa'ailoga	M.2 (2280)
Fetufa'aiga	PCIe 3.0 (x4) (32GT/s)
Host Controller Interface	NVMe 1.2
Catacity	256GB
Byte per Sector	512Byte
Memory Type	NAND Flash Memory, TLC
NAND Structure	Samsung V-NAND V4 (TLC 3D NAND, 64-laulau)
DRAM	○
SLC Caching	○
Performance	– Sequential Read : 3000Mb / s – Sequential Write : 1800Mb / s – IOPS for read : Max. 270k – IOPS for write : Max. 420k
Memory Controller	ARM Phoenix (S4LR020 S821HNQD 1842 ARM Phoenix)
NVMe Heat Sink	not included
UBER	< 1 sector per 10 15 bits read
MTBF	1.5 Million Hours
Temperature	Faagaoioiga : 0°C ~ 70°C Le-faagaoioia : -40° C ~ 85 ° C
Humidity (non-condensing)	Le-faagaoioia : 5 ~ 95%
Liner drick	Le-faagaoioia (0.5ms duration with 1/2 sine wave) : 1,500 Gpeak
Gauaʻi	Le-faagaoioia (20 ~ 2,000 Hz, Sinusoidal) : 20 Gpeak
Voltage Ripple/Noise (max.)	100mV p-p
Malosiaga o Manumalo	– Read (Typ, Rms) : 5.9W – Write (Typ, Rms) : 5.7W – Paie (Typ) : 30mW – L1.2 (Typ) : 5mW
Width	22.00 ± 0.15 mm
Length	80.00 ± 0.15 mm
Maualuluga	Max. 2.38 mm
Mamafa	Max. 9.0g