Fabricante : LG Semicon Co., Ltd. Ar ximha̲i fabricación : 'Bede ya pieza Corea jar Sur : ? Form Factor : SIMM Features : 72anclar, EDO DRAM, Non-Parity Memory Capacity : 16MB Bandwidth : 32bit Speed : 60Ns(Trac) Voltaje : 5V Chip Composition : GM71C17400CJ6 × 8 Chip Build Year/Week : 1998/27 One Chip Capacity : 4M […]

Fabricante : Hyundai Electronics Industries Co., Ltd. Ar je̲ya nju̲ts'i : 1994 Ar ximha̲i fabricación : 'Bede ya pieza Corea jar Sur : Factor dets'e HYM532100AM — 70 : Ar klase ar memoria SIMM : Ar mfeni memoria DRAM EDO : 4Ar klase ar bus MB : Memoria página ngut'a (FPM) Corrección errores : Pines hinda paridad : 72pin Ancho 'me̲i : 32Latencia bits : 70Ns (Trac) Voltaje […]

KMM591000AN-7 is composed two KM44C1000AJ-7 chips and one KM44C1000CJ-7 chip. KMM591000BN-7 is composed with two KM44C1000BJ-7 chips and one KM44C1000CJ-7 chip. They are 1MB DRAM SIMMs produced by Samsung Electronics. Manufacturing Company : Samsung Electronics Manufactured Year : 1992 / 1993 Ar ximha̲i fabricación : South Korea Module Features : 30anclar, SIMM, Parity RAM Memory Capacity […]

EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little. Fabricante : Hyundai Electronics Industries Co., Ltd. Build Year/Week : 1997/32 Ar ximha̲i fabricación : Corea (South Korea) Part Number […]