Non-ECC – DeviceLog.com https://www.devicelog.com/nl/ device, part, spec Tue, 23 Mar 2021 10:33:05 +0000 nl hourly 1 https://wordpress.org/?v=6.6.2 EK-geheugen 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6 https://www.devicelog.com/nl/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/ https://www.devicelog.com/nl/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/#respond Tue, 23 Mar 2021 10:30:05 +0000 https://www.devicelog.com/?p=1311-nl EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6

productnaam EK Geheugen 2GB DDR SO-DIMM PC2-5300 CL5
Onderdeel nummer EKM256S74BP8-E6
Fabrikant EK-geheugen
Land van vervaardiging Taiwan
Chip Build Jaar/week 2008/27
Type geheugenmodule DDR2 SO-DIMM 200 pin
datacapaciteit 2GB
Kloksnelheid 667Mhz (PC2-5300)
Memory Timing CL=5, tRCD=5, tRP=5
Kenmerken 200pin
Unbuffered
Non-ECC
notitieboekje(laptop) Geheugen
databits x64
Gegevenschipgegevens EK20908A8A-3EG
20827
XCG248-UA3G
Pakket FBGA (Fijne toonhoogte BGA)
VDD Voltage 1.8V

 

]]> https://www.devicelog.com/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/feed/ 0 Samsung 16GB DDR4 SDRAM RDIMM 2RX8 PC4-21300 (PC4-2666V-UB1-11) (M378A2K43CB1-CTD) https://www.devicelog.com/nl/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/ https://www.devicelog.com/nl/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/#comments Wed, 06 Nov 2019 07:38:24 +0000 https://www.devicelog.com/?p=1233-nl SAMSUNG DDR4 SDRAM 16GB PC4-21300 1906

productnaam Samsung DDR4 SDRAM 16GB 2R × 8 PC4-21300
(PC4-2666V-UB1-11)
Onderdeel nummer M378A2K43CB1-CTD
(C-de)
Fabrikant Samsung Electronics
Land van vervaardiging China
Build Jaar / Week 2019 / 06
DIMM-type Udinn
datacapaciteit 16GB
Datasnelheid
(Max bandbreedte)		 2666.67 MT / s
(21333.33 MB / s)
Memory Timing
(CL – tRCD – tRP – TRA ' – TRC)		 19-19-19-43-61
Kenmerken 288pin, DDR4 ongebufferd ECC SDRAM DIMM
databits x64
Interne Module Banks 16 Banks (4 Bank Groepen)
Ranks 2 (Dual Rank)
component Samenstelling (1G × 8) × 16
(K4A8G085WC-BCTD) × 16
Pakket 78FBGA met loodvrije & Halogeenvrij
(RoHS-conformiteit)
Hoogte 31.25 mm
VDD Voltage 1.2 V ± 0.06 V
Operating Case Temperatuur Gemiddeld Refresh Period 7.8us op dan lager TGEVAL 85℃,
3.9ons op 85 ℃ < TGEVAL ≤ 95 ℃

 

]]> https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/feed/ 1 Samsung 8GB DDR4 SDRAM RDIMM 1Rx8 PC4-21300 (PC4-2666V-UA2-11) (M378A1K43CB2-CTD) https://www.devicelog.com/nl/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/ https://www.devicelog.com/nl/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/#respond Tue, 05 Nov 2019 11:07:57 +0000 https://www.devicelog.com/?p=1215-nl SAMSUNG DDR4 SDRAM 8GB DIMM (1Rx8_PC4-21300, PC4-2666V-UA2-11, 1828)

productnaam Samsung DDR4 SDRAM 8GB 1R × 8 PC4-21300
(PC4-2666V-UA2-11)
Onderdeel nummer M378A1K43CB2-CTD
(C-de)
Fabrikant Samsung Electronics
Land van vervaardiging China
Build Jaar / Week 2018 / 28
DIMM-type Udinn
datacapaciteit 8GB
Datasnelheid
(Max bandbreedte)		 2666.67 MT / s
(21333.33 MB / s)
Memory Timing
(CL – tRCD – tRP – TRA ' – TRC)		 19-19-19-43-61
Kenmerken 288pin, DDR4 ongebufferd ECC SDRAM DIMM
databits x64
Interne Module Banks 16 Banks (4 Bank Groepen)
Ranks 1 (Enkele rang)
component Samenstelling (1G × 8) × 8
(K4A8G085WC-BCTD) × 8
Pakket 78FBGA met loodvrije & Halogeenvrij
(RoHS-conformiteit)
Hoogte 30mm
VDD Voltage 1.2V ± 0,06V
Operating Case Temperatuur Gemiddeld Refresh Period 7.8us op dan lager TGEVAL 85℃,
3.9ons op 85 ℃ < TGEVAL ≤ 95 ℃

 

]]> https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/feed/ 0 Samsung 512MB PC3200 DDR SDRAM DIMM (CL3, niet-originele RAM) https://www.devicelog.com/nl/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/ https://www.devicelog.com/nl/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/#comments Wed, 13 Mar 2013 08:31:50 +0000 https://www.devicelog.com/?p=717-nl Samsung DDR 512MB PC3200U-30331-B2 CL3 (non-genuine RAM)

Samsung DDR 512MB PC3200U-30331-B2 CL3 underside (non-genuine RAM)

  • Productnaam : Samsung DDR SDRAM 512 MB PC3200 (niet-originele onderdelen)
  • Onderdeel nummer : PC3200U-30331-B2 M368L6423ETM-CCC
  • Fabrikant : Samsung Electronics (SEC)
  • Land van fabricage : Zuid-Korea
  • Build jaar / week : 2003/33
  • datacapaciteit : 512MB
  • Kloksnelheid : 400Mhz (PC3200)
  • Kenmerken : 184pin, Niet-gebufferde niet-ECC DDR SDRAM DIMM
  • Datachip samenstelling : [SEC K4H560838E-TCCC] ✕ 8 chips
  • Databanken : 4 banken
  • Vernieuwingsinterval : 7.8μs (8K / 64ms vernieuwen)
  • Lees latancy : 3 klok (CL3)
  • Burst-lengte : 2, 4, 8
  • Burst-type : opeenvolgend & interleave
  • Maximale burst-vernieuwingscyclus : 8
  • VDD, VDDQ : 2.6V ± 0,1V
]]> https://www.devicelog.com/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/feed/ 3 Samsung 4GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (2RX8, Korea) https://www.devicelog.com/nl/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/ https://www.devicelog.com/nl/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/#respond Thu, 10 Jan 2013 02:20:09 +0000 https://www.devicelog.com/?p=602-nl Samsung DDR3 SDRAM 4GB Memory DIMM (2Rx8 PC3-10600U-09-11-B1 M378B5273DH0-CH9 1131)

Productnaam Samsung 4GB DDR3 SDRAM PC3-10600 geheugen
(2RX8, PC3-10600U-09-10-A0, M378B5273DH0-CH9, M378B5273DH1)
Fabrikant Samsung Electronics (SEC)
Land van fabricage Zuid-Korea
Build jaar / week 2011/31
datacapaciteit 4GB
Kloksnelheid 1333Mhz (PC3-10600)
Memory Timing CL = 9, tRCD = 9, tRP = 9
Kenmerken 240pin, Unbuffered DDR3 ECC SDRAM DIMM
databits x64
Diepte / bit organisatie 512M / x8
Interne Module banken 8
Ranks 2
Datachip samenstelling [SEC HCH9 K4B2G0846D] ✕ 16 chips
(256Mbit ✕ 8 ✕ 16 pcs)
component herziening 4e generatie
Pakket FBGA (Loodvrij & Halogeenvrij)
Hoogte 30mm
VDD spanning 1.5V
Operating Case Temperatuur 0° C ~ 85 ° C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/feed/ 0 Samsung 2GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (1RX8, China) https://www.devicelog.com/nl/memory/dram/ddr3-sdram/samsung-ddr3-sdram-2gb-pc3-10600-1333mhz-1rx8-china/ https://www.devicelog.com/nl/memory/dram/ddr3-sdram/samsung-ddr3-sdram-2gb-pc3-10600-1333mhz-1rx8-china/#comments Wed, 09 Jan 2013 14:20:55 +0000 https://www.devicelog.com/?p=557-nl Samsung DDR3 SDRAM 2GB 1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9

Productnaam Samsung DDR3 SDRAM PC3-10600 2GB Memory
(1rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9 M378B5263DH1)
Fabrikant Samsung Electronics
Land van fabricage China
Build jaar / week 2010/38
datacapaciteit 2GB
Kloksnelheid 1333Mhz (PC3-10600)
Kenmerken 240pin, Unbuffered DDR3 ECC SDRAM DIMM
Productie procestechnologie 40nm
databits x64
Interne Module banken 8
Datachip samenstelling [SEC HCH9 K4B2G0846C] ✕ 8 chips
Diepte / bit organisatie 256M / x8
component herziening 4e generatie
Pakket FBGA (Loodvrij & Halogeenvrij)
Hoogte 30mm
VDD spanning 1.5V
Operating Case Temperatuur 0° C ~ 85 ° C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-ddr3-sdram-2gb-pc3-10600-1333mhz-1rx8-china/feed/ 6