Geheugen – DeviceLog.com https://www.devicelog.com/nl/ device, part, spec Thu, 01 Dec 2022 23:32:55 +0000 nl hourly 1 https://wordpress.org/?v=6.6.2 Samsung 16 MB SDRAM DIMM PC66 (KMM366S203CTL-G0) https://www.devicelog.com/nl/memory/dram/sdram/samsung-16mb-sdram-dimm-pc66-kmm366s203ctl-g0/ https://www.devicelog.com/nl/memory/dram/sdram/samsung-16mb-sdram-dimm-pc66-kmm366s203ctl-g0/#respond Wed, 20 Jul 2022 09:33:56 +0000 https://www.devicelog.com/?p=1358-nl Samsung 16MB SDRAM PC66 DIMM (KMM366S203CTL-G0)Samsung 16MB SDRAM PC66 DIMM (KMM366S203CTL-G0) backside

  • Productnaam : Samsung 16MB SDRAM 16MB PC66
  • Onderdeel nummer : KMM366S203CTL-G0
  • Fabrikant : Samsung Electronics Co., Ltd.. (SEC)
  • Land van fabricage : Zuid-Korea
  • Build jaar / week : 1998/09
  • datacapaciteit : 16MB
  • Kloksnelheid : 66Mhz (PC66)
  • Kenmerken : 168 pin, Niet-gebufferde niet-ECC SDRAM DIMM
  • Datachip samenstelling : [KM48S2020CT-G10] × 8 chips
    (2M × 64bit)
  • Eén chipinformatie
    • KM48S2020CT-G10 (UQK218EM of UQL004DD)
    • Geheugen IC-type : Synchrone DRAM
    • Capaciteit : 2M x 8bit
    • Toegangstijd-Max : 7 NS
    • Interleaved Burst-lengte: 1, 2, 4, 8
    • Klokfrequentie-Max (fCLK) : 100 MHz
    • 44 pin
    • Build jaar / week : 1998/07
  • VDD : 3.3V
  • ENZ : 366S203BTL, AD1055-00, SMB2 94V-0
]]> https://www.devicelog.com/memory/dram/sdram/samsung-16mb-sdram-dimm-pc66-kmm366s203ctl-g0/feed/ 0 LG Semicon 16 MB SDRAM DIMM PC66 (GMM2642233BLTG-10K 7101S) https://www.devicelog.com/nl/memory/dram/sdram/lg-semicon-16mb-sdram-dimm-pc66-gmm2642233bltg-10k-7101s/ https://www.devicelog.com/nl/memory/dram/sdram/lg-semicon-16mb-sdram-dimm-pc66-gmm2642233bltg-10k-7101s/#respond Fri, 15 Jul 2022 08:54:09 +0000 https://www.devicelog.com/?p=1350-nl LG Semicon 9703 2Mx64 SDRAM GMM2642233BLTG-10K 7101SLG Semicon 9703 2Mx64 SDRAM 168pin DIMM

  • Productnaam : LG SDRAM 16MB PC66
  • Onderdeel nummer : GMM2642233BLTG-10K 7101S
  • Fabrikant : LG Semicon Co., Ltd.
  • Land van fabricage : Zuid-Korea
  • Build jaar / week : 1997/03
  • datacapaciteit : 16MB
  • Kloksnelheid : 66Mhz (PC66)
  • Kenmerken : 168pin, Niet-gebufferde niet-ECC SDRAM DIMM
  • Datachip samenstelling : [GM72V16821BT10K] × 8 chips
    (2M × 64bit)
  • Eén chipcapaciteit : 2M x 8bit
  • VDD : 3.3V
]]> https://www.devicelog.com/memory/dram/sdram/lg-semicon-16mb-sdram-dimm-pc66-gmm2642233bltg-10k-7101s/feed/ 0 LG Semicon 16MB EDO-DRAM 72pin SIMM (GM71C17400CJ6) https://www.devicelog.com/nl/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/ https://www.devicelog.com/nl/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/#comments Mon, 11 Jul 2022 15:05:31 +0000 https://www.devicelog.com/?p=1336-nl LGS GM71C17400CJ6 16MB EDO-DRAM SIMM frontsideLGS GM71C17400CJ6 16MB EDO-DRAM SIMM backside

  • Fabrikant : LG Semicon Co., Ltd.
  • Land van fabricage : Zuid-Korea
  • Onderdeel nummer : ?
  • Vormfactor : SIMM
  • Kenmerken : 72pin, EDO DRAM, Niet-pariteit
  • Geheugencapaciteit : 16MB
  • Bandbreedte : 32beetje
  • Snelheid : 60NS(tRAC)
  • Spanning : 5V
  • chip Samenstelling : GM71C17400CJ6 × 8
  • Chip Build Jaar/week : 1998/27
  • Eén chipcapaciteit : 4M x 4 bits
  • Enz : Addonics®, SD816
]]> https://www.devicelog.com/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/feed/ 1 EK-geheugen 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6 https://www.devicelog.com/nl/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/ https://www.devicelog.com/nl/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/#respond Tue, 23 Mar 2021 10:30:05 +0000 https://www.devicelog.com/?p=1311-nl EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6

productnaam EK Geheugen 2GB DDR SO-DIMM PC2-5300 CL5
Onderdeel nummer EKM256S74BP8-E6
Fabrikant EK-geheugen
Land van vervaardiging Taiwan
Chip Build Jaar/week 2008/27
Type geheugenmodule DDR2 SO-DIMM 200 pin
datacapaciteit 2GB
Kloksnelheid 667Mhz (PC2-5300)
Memory Timing CL=5, tRCD=5, tRP=5
Kenmerken 200pin
Unbuffered
Non-ECC
notitieboekje(laptop) Geheugen
databits x64
Gegevenschipgegevens EK20908A8A-3EG
20827
XCG248-UA3G
Pakket FBGA (Fijne toonhoogte BGA)
VDD Voltage 1.8V

 

]]> https://www.devicelog.com/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/feed/ 0 Samsung 16GB DDR4 SDRAM RDIMM 2RX8 PC4-21300 (PC4-2666V-UB1-11) (M378A2K43CB1-CTD) https://www.devicelog.com/nl/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/ https://www.devicelog.com/nl/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/#comments Wed, 06 Nov 2019 07:38:24 +0000 https://www.devicelog.com/?p=1233-nl SAMSUNG DDR4 SDRAM 16GB PC4-21300 1906

productnaam Samsung DDR4 SDRAM 16GB 2R × 8 PC4-21300
(PC4-2666V-UB1-11)
Onderdeel nummer M378A2K43CB1-CTD
(C-de)
Fabrikant Samsung Electronics
Land van vervaardiging China
Build Jaar / Week 2019 / 06
DIMM-type Udinn
datacapaciteit 16GB
Datasnelheid
(Max bandbreedte)		 2666.67 MT / s
(21333.33 MB / s)
Memory Timing
(CL – tRCD – tRP – TRA ' – TRC)		 19-19-19-43-61
Kenmerken 288pin, DDR4 ongebufferd ECC SDRAM DIMM
databits x64
Interne Module Banks 16 Banks (4 Bank Groepen)
Ranks 2 (Dual Rank)
component Samenstelling (1G × 8) × 16
(K4A8G085WC-BCTD) × 16
Pakket 78FBGA met loodvrije & Halogeenvrij
(RoHS-conformiteit)
Hoogte 31.25 mm
VDD Voltage 1.2 V ± 0.06 V
Operating Case Temperatuur Gemiddeld Refresh Period 7.8us op dan lager TGEVAL 85℃,
3.9ons op 85 ℃ < TGEVAL ≤ 95 ℃

 

]]> https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/feed/ 1 Samsung 8GB DDR4 SDRAM RDIMM 1Rx8 PC4-21300 (PC4-2666V-UA2-11) (M378A1K43CB2-CTD) https://www.devicelog.com/nl/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/ https://www.devicelog.com/nl/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/#respond Tue, 05 Nov 2019 11:07:57 +0000 https://www.devicelog.com/?p=1215-nl SAMSUNG DDR4 SDRAM 8GB DIMM (1Rx8_PC4-21300, PC4-2666V-UA2-11, 1828)

productnaam Samsung DDR4 SDRAM 8GB 1R × 8 PC4-21300
(PC4-2666V-UA2-11)
Onderdeel nummer M378A1K43CB2-CTD
(C-de)
Fabrikant Samsung Electronics
Land van vervaardiging China
Build Jaar / Week 2018 / 28
DIMM-type Udinn
datacapaciteit 8GB
Datasnelheid
(Max bandbreedte)		 2666.67 MT / s
(21333.33 MB / s)
Memory Timing
(CL – tRCD – tRP – TRA ' – TRC)		 19-19-19-43-61
Kenmerken 288pin, DDR4 ongebufferd ECC SDRAM DIMM
databits x64
Interne Module Banks 16 Banks (4 Bank Groepen)
Ranks 1 (Enkele rang)
component Samenstelling (1G × 8) × 8
(K4A8G085WC-BCTD) × 8
Pakket 78FBGA met loodvrije & Halogeenvrij
(RoHS-conformiteit)
Hoogte 30mm
VDD Voltage 1.2V ± 0,06V
Operating Case Temperatuur Gemiddeld Refresh Period 7.8us op dan lager TGEVAL 85℃,
3.9ons op 85 ℃ < TGEVAL ≤ 95 ℃

 

]]> https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/feed/ 0 Samsung 2GB DDR2 SDRAM DIMM 2RX8 PC2-6400 (M378T5663QZ3-CF7) https://www.devicelog.com/nl/memory/dram/ddr2-sdram/samsung-2gb-ddr2-sdram-dimm-2rx8-pc2-6400-m378t5663qz3-cf7/ https://www.devicelog.com/nl/memory/dram/ddr2-sdram/samsung-2gb-ddr2-sdram-dimm-2rx8-pc2-6400-m378t5663qz3-cf7/#respond Sat, 04 Jun 2016 15:17:04 +0000 https://www.devicelog.com/?p=1116-nl Samsung DDR2 SDRAM 2GB 2Rx8 PC2-6400 (M378T5663QZ3-CF7)Samsung DDR2 SDRAM 2GB 2Rx8 PC2-6400 (M378T5663QZ3-CF7)

productnaam Samsung DDR2 SDRAM 2GB 2R × 8 PC2-6400
Onderdeel nummer M378T5663QZ3-CF7
Fabrikant Samsung Electronics
Land van vervaardiging China
Build Jaar / Week 2009/04, 2010/07
Type geheugenmodule DIMM
datacapaciteit 2GB
Kloksnelheid 800Mhz (PC2-6400)
Memory Timing CL = 6, tRCD = 6, tRP = 6
Kenmerken 240pin, Unbuffer Niet-ECC DDR2 SDRAM DIMM
databits x64
Interne Module Banks 8
Ranks 2
Samenstelling van gegevenschips
(Diepte × Bit organisatie × stuks)		 128M × 8 × 16 stuks
(K4T1G084QQ × 16 stuks)
Pakket 60FBGA met loodvrij en halogeenvrij
(RoHS-conformiteit)
Hoogte 30mm
VDD Voltage 1.8V ± 0,1V
Operating Case Temperatuur 0° C ~ 95 ° C

 

]]> https://www.devicelog.com/memory/dram/ddr2-sdram/samsung-2gb-ddr2-sdram-dimm-2rx8-pc2-6400-m378t5663qz3-cf7/feed/ 0 Samsung 8GB PC3-12800 DDR3 SDRAM DIMM (2R x 8, M378B1G73QH0-CK0) https://www.devicelog.com/nl/memory/dram/ddr3-sdram/samsung-8gb-ddr3-sdram-pc3-12800u-11-12-b1-2rx8-m378b1g73qh0-ck0/ https://www.devicelog.com/nl/memory/dram/ddr3-sdram/samsung-8gb-ddr3-sdram-pc3-12800u-11-12-b1-2rx8-m378b1g73qh0-ck0/#comments Fri, 20 Mar 2015 05:46:58 +0000 https://www.devicelog.com/?p=902-nl Samsung 8GB DDR3 SDRAM 2R×8 PC3-12800U-11-12-B1 M378B1G73QH0-CK0 1408

Productnaam Samsung 8GB DDR3 SDRAM PC3-12800 8GB DIMM
(2RX8, PC3-12800U-11-12-B1, M378B1G73QH0-CK0)
Fabrikant Samsung Electronics
Land van fabricage Filippijns
Build jaar / week 2014/08
datacapaciteit 8GB
Kloksnelheid 1600Mhz (PC3-12800)
Memory Timing CL = 11, tRCD = 11, TRP = 11
Kenmerken 240pin, Unbuffered DDR3 ECC SDRAM DIMM
Productie procestechnologie 20, 30, 40nm
databits x64
Interne Module banken 8
Ranks 2
Datachip samenstelling
(Diepte × Bit organisatie × stuks)		 512M x 8 x 16 pcs
(K4B4G0846Q-HCK0 × 16 pcs)
Pakket
78 FBGA met loodvrije & Halogeenvrij
(RoHS-conformiteit)
Hoogte 30mm
VDD spanning 1.5V ± 0.075V
Operating Case Temperatuur 0° C ~ 95 ° C

 

]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-8gb-ddr3-sdram-pc3-12800u-11-12-b1-2rx8-m378b1g73qh0-ck0/feed/ 4 Samsung 512MB PC2700 DDR SDRAM DIMM (M368L6423DTM) https://www.devicelog.com/nl/memory/dram/ddr-sdram/samsung-ddr-sdram-pc2700-512mb-dimm-m368l6423dtm/ https://www.devicelog.com/nl/memory/dram/ddr-sdram/samsung-ddr-sdram-pc2700-512mb-dimm-m368l6423dtm/#respond Tue, 03 Mar 2015 08:45:43 +0000 https://www.devicelog.com/?p=814-nl De M368L6423DTM is 32M bit x 64 Dubbele datasnelheid(DDR) SDRAM-geheugenmodule met hoge dichtheid op basis van respectievelijk de vijfde generatie van 256 MB DDR SDRAM. De M368L6423DTM bestaat uit zestien CMOS 32M x 8 bit met 4banks Double Data Rate SDRAM's in 66-pins TSOP-II(400duizend) pakketten gemonteerd op een 184-pins glas-epoxy-substraat. Four 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each DDR SDRAM. The M368L6423DTM Dual In-line Memory Module and is intended for mounting into 184pin edge connector sockets.

Samsung DDR SDRAM 256MB PC2700 DIMM (M368L6423DTM) Samsung DDR SDRAM 256MB PC2700 DIMM (M368L6423DTM)

Productnaam Samsung DDR SDRAM PC2700 512MB DIMM
(PC2700U-25331B2, M368L6423DTM)
Fabrikant Samsung Electronics
Land van fabricage Korea
Build jaar / week 2003/12
datacapaciteit 512MB
Kloksnelheid 166Mhz (PC2700, DDR333)
Memory Timing CL=2.5
Kenmerken 184pin, DIMM, Unbuffer niet-ECC DDR SDRAM
Grootte 133.35mm × 31.75mm
databits 64beetje
Interne Module banken 4
Datachip samenstelling K4H560838D-TCB3 × 16
(32M × 8bit × 16chips)
Pakket TSOP-II
VDD spanning 2.5V ± 0.2V
Operating Case Temperatuur 0° C ~ 85 ° C
]]> https://www.devicelog.com/memory/dram/ddr-sdram/samsung-ddr-sdram-pc2700-512mb-dimm-m368l6423dtm/feed/ 0 Samsung 4GB PC3-10600 DDR3 SDRAM SO-DIMM https://www.devicelog.com/nl/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/ https://www.devicelog.com/nl/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/#comments Mon, 02 Mar 2015 13:25:48 +0000 https://www.devicelog.com/?p=791-nl Samsung Electronics heeft in juli DDR3 SDRAM-modules uitgebracht die gebruik maken van de 30nm-procestechnologie 2010. This RAM module was made by the 40nm process technology.

Samsung SODIMM DDR3 PC3-10600 4GB frontside Samsung SODIMM DDR3 PC3-10600 4GB rearside

Productnaam Samsung DDR3 SDRAM PC3-10600 4GB SO-DIMM
(2RX8, PC3-10600S-09-10-F2, M471B5273CH0-CH9)
Fabrikant Samsung Electronics (SEC)
Land van fabricage China
Build jaar / week 2011/13
datacapaciteit 4GB
Kloksnelheid 1333Mhz (PC3-10600)
Memory Timing CL = 9, tRCD = 9, tRP = 9
Kenmerken 204pin, SODIMM, Unbuffer niet-ECC DDR3 SDRAM
Productie procestechnologie 40nm
databits x64
Interne Module banken 8
Ranks 2
Datachip samenstelling 256M x 8 * 16 pcs
component herziening 2GB, C-de
Pakket 78 bal FBGA
Hoogte 30mm
VDD spanning 1.5V
Operating Case Temperatuur 0° C ~ 85 ° C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/feed/ 3