Samsung 2GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (1Rx8, China)

tso tawm los ntawm DeviceLog.com | muab lo rau hauv DDR3 SDRAM | Muab lo rau 2013-01-09

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Samsung DDR3 SDRAM 2GB 1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9

Product name Samsung DDR3 SDRAM PC3-10600 2GB Memory (1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9 M378B5263DH1) Manufacturer Samsung Electronics Country of manufacture China Build year/week 2010/38 Data Capacity 2GB Clock speed 1333Mhz (PC3-10600) Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Production process technology 40nm Data bits x64 Internal Module banks 8 Data chip composition [SEC HCH9 K4B2G0846C] ✕ 8 chips […]

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A-DATA Vitesta 512MB DDR600 DIMM (PC4800)

tso tawm los ntawm DeviceLog.com | muab lo rau hauv DDR SDRAM | Muab lo rau 2012-10-25

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A-DATA Vitesta DDR600 Viesta Memory, in DDR SDRAM memory modules, firstly achieved 600Mhz clock speed with Samsung TCCD memory chips. The data capacity of A-data Viesta was 512MB or 256MB. It was mostly used for ovcrclocking.   Product Name A-DATA Vitesta DDR600 512MB Part Number MDOSSLF3H47A0B1G0Z Manufacturer A-DATA Country of manufacture Taiwan Build Year 2004 Features 184pin Unbuffer […]

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Samsung 1MB DRAM 30pin SIMM

tso tawm los ntawm DeviceLog.com | muab lo rau hauv THAWJ DRAM | Muab lo rau 2012-05-18

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Samsung 1MB DRAM SIMM backside (KMM591000AN-7, KMM591000BN-7) (KM44C1000AJ-7, KM44C1000BJ-7)

KMM591000AN-7 is composed two KM44C1000AJ-7 chips and one KM44C1000CJ-7 chip. KMM591000BN-7 is composed with two KM44C1000BJ-7 chips and one KM44C1000CJ-7 chip. They are 1MB DRAM SIMMs produced by Samsung Electronics. Tuam txhab Manufacturing tuam txhab : Samsung Electronics Manufactured Year : 1992 / 1993 Lub teb chaws ntawm manufacture : Kaus lim qab teb Module Nta : 30Pin, SIMM, Parity RAM Memory Capacity […]

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ELPIDA 2GB DDR3 SDRAM SO-DIMM PC3-10600S-9-10-F1

tso tawm los ntawm DeviceLog.com | muab lo rau hauv DDR3 SDRAM | Muab lo rau 2012-03-09

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ELPIDA DDR3 2GB 2Rx8 PC10600-9-10-F1 Frontside

Product Name : ELPIDA 2GB 2Rx8 PC3-10600S-9-10-F1 Part Number : EBJ21UE8BFU0-DJ-F Manufacturer : ELPIDA Country of manufacture : Taiwan Build Year/Week : 2010/38 Form Factor : DDR3 SO-DIMM Features : 204Pin, Non-ECC Memory Capacity : 2GB Max Data Rate : 1333Mbps Voltage : 1.5V Organization : 256M words × 64 bits, 2 ranks Chip Composition : J1108BFBG-DJ-F […]

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Hyundai 16MB EDO DRAM 72pin SIMM (HYM532414)

tso tawm los ntawm DeviceLog.com | muab lo rau hauv EDO DRAM | Muab lo rau 2011-08-04

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Hyundai 72pin 16MB DRAM SIMM HY5117404B (frontside)

EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little. Manufacturer : Hyundai Electronics Industries Co., Ltd. Build Year/Week : 1997/32 Lub teb chaws ntawm manufacture : Korea (kaus lim qab teb) Part Number […]

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