parità – DeviceLog.com https://www.devicelog.com/mt/ device, part, spec Sat, 04 Jun 2016 16:22:33 +0000 mt hourly 1 https://wordpress.org/?v=6.6.2 Samsung 1MB DRAM 30pin SIMM https://www.devicelog.com/mt/memory/dram/original-dram/samsung-30pin-1mb-dram-simm/ https://www.devicelog.com/mt/memory/dram/original-dram/samsung-30pin-1mb-dram-simm/#comments Fri, 18 May 2012 11:01:28 +0000 https://www.devicelog.com/?p=326-mt
Samsung 1MB DRAM SIMM backside (KMM591000AN-7, KMM591000BN-7) (KM44C1000AJ-7, KM44C1000BJ-7)

Samsung 1MB DRAM SIMM backside (KMM591000AN-7, KMM591000BN-7) (KM44C1000AJ-7, KM44C1000BJ-7)

KMM591000AN-7 huwa magħmul minn żewġ ċipep KM44C1000AJ-7 u ċippa waħda KM44C1000CJ-7. KMM591000BN-7 huwa magħmul minn żewġ ċipep KM44C1000BJ-7 u ċippa waħda KM44C1000CJ-7. They are 1MB DRAM SIMMs produced by Samsung Electronics.

  • Kumpanija tal-Manifattura : Samsung Electronics
  • Sena Manifatturata : 1992 / 1993
  • Pajjiż tal-manifattura : Korea t'Isfel
  • Karatteristiċi tal-Modulu : 30pin, SIMM, Parità RAM
  • Kapaċità tal-Memorja : 1MB
  • BandWidth : 8daqsxejn
  • Karatteristika tal-Veloċità : 70ns(tRAC)
  • Kompożizzjoni taċ-Ċippa :
    KMM591000AN-7 = KM44C1000AJ-7 × 2 + KM44C1000CJ-7
    KMM591000BN-7 = KM44C1000BJ-7 × 2 + KM44C1000CJ-7
]]> https://www.devicelog.com/memory/dram/original-dram/samsung-30pin-1mb-dram-simm/feed/ 1 Goldstar 1MB DRAM 30pin SIMM (GM71C4400B + GMC71C1000B) https://www.devicelog.com/mt/memory/dram/original-dram/goldstar-30pin-1mb-dram-simm-gm71c4400b-gmc71c1000b/ https://www.devicelog.com/mt/memory/dram/original-dram/goldstar-30pin-1mb-dram-simm-gm71c4400b-gmc71c1000b/#respond Tue, 02 Aug 2011 09:45:54 +0000 https://www.devicelog.com/?p=46-mt Dan SIMM miksi bil-kulur tad-deheb. The plating color and the board form of this SIMM is different from the SIMM with GM71C4400A.

GM71C4400B huwa 1M × 4bit. U GM71C1000B huwa 1M × 4bit. The memory capacity and the function of this SIMM is not different from the SIMM with GM71C4400A and GM71C1000.

Goldstar 30pin 1MB DRAM SIMM (GM71C4400B + GMC71C1000B) (frontside)

Goldstar 30핀 1MB DRAM SIMM (GM71C4400B + GMC71C1000B) (backside)

  • Kumpanija tal-Manifattura : Goldstar Electon
  • Sena Manifatturata : 1994
  • Pajjiż tal-manifattura : Korea t'Isfel
  • Karatteristiċi tal-Modulu : 30pin, SIMM, Parità RAM
  • Kapaċità tal-Memorja : 1MB
  • BandWidth : 8daqsxejn
  • Karatteristika tal-Veloċità : 70ns(tRAC)
  • Kompożizzjoni taċ-Ċippa : GM71C4400B × 2 + GM71C1000B

Goldstar 30pin 1MB DRAM SIMM (GM71C4400B + GMC71C1000B)

]]> https://www.devicelog.com/memory/dram/original-dram/goldstar-30pin-1mb-dram-simm-gm71c4400b-gmc71c1000b/feed/ 0 Goldstar 1MB DRAM 30pin SIMM (GM71C4400A + GMC71C1000) https://www.devicelog.com/mt/memory/dram/original-dram/goldstar-30pin-1mb-dram-simm-gm71c4400a-gmc71c1000/ https://www.devicelog.com/mt/memory/dram/original-dram/goldstar-30pin-1mb-dram-simm-gm71c4400a-gmc71c1000/#comments Tue, 02 Aug 2011 05:39:00 +0000 https://www.devicelog.com/?p=23-mt Goldstar hija t-trademark ta’ Goldstar Electron Co., Ltd. Biddlet isimha f'LG Semiconductor (LG Semicon) fi 1995, u ġiet magħquda fl-industrija tal-Hyundai Electronics (Hynix ta' issa) at 1999.

Goldstar 30pin 1MB DRAM SIMM (GM71C4400A+GMC71C1000) (frontside)Goldstar 30pin 1MB DRAM SIMM (GM71C4400A+GMC71C1000) (backside)

  • Kumpanija tal-Manifattura : Goldstar Electron
  • Sena manifatturata: 1993
  • Pajjiż tal-manifattura : Korea t'Isfel
  • Karatteristiċi tal-Modulu : 30pin, DRAM, SIMM, Parità RAM
  • Kapaċità tal-Memorja : 1MB
  • BandWidth : 8daqsxejn
  • Karatteristika tal-Veloċità : 70ns(tRAC)
  • Kompożizzjoni taċ-Ċippa : GM71C4400A × 2 + GM71C1000
]]> https://www.devicelog.com/memory/dram/original-dram/goldstar-30pin-1mb-dram-simm-gm71c4400a-gmc71c1000/feed/ 2 Hyundai 1MB DRAM 30pin SIMM https://www.devicelog.com/mt/memory/dram/original-dram/hyundai-30pin-1mb-dram-simm/ https://www.devicelog.com/mt/memory/dram/original-dram/hyundai-30pin-1mb-dram-simm/#comments Mon, 01 Aug 2011 16:12:29 +0000 https://www.devicelog.com/?p=5-mt Dan RAM huwa 30-pin 1MB SIMM prodott mill-industrija Hyundai Electronics(Hynix ta' issa). 30-pin SIMMs kienu użati universalment minn 80286 biex 80486. Jekk in-numru ta 'ċipep huwa numru fard, one of the chips perform parity check.

Din ir-RAM hija magħmula minn żewġ HY514400A(1M x 4bit) u wieħed HY531000A(1M x 1bit). Il-kapaċità tal-memorja tar-RAM hija 1MB. HY531000A hija ċippa tad-data, and HY531000A is parity chip.

Hyundai 30-pin 1MB SIMM (HY514400A × 2 + HT531000A)

  • Manifattur : Hyundai Electronics Industries Co., Ltd.
  • Sena Manifatturata : 1993
  • Karatteristiċi tal-Prodott : 30-pin, DRAM SIMM, Parità RAM
  • Kapaċità tal-Memorja : 1MB
  • Bandwidth : 8daqsxejn
  • Karatteristika tal-Veloċità : 70ns(tRAC)
  • Kompożizzjoni taċ-Ċippa : HY514400A × 2 + HY531000A (4×2 + 1 bits)
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