mhux ġenwin – DeviceLog.com https://www.devicelog.com/mt/ device, part, spec Sat, 04 Jun 2016 15:05:16 +0000 mt hourly 1 https://wordpress.org/?v=6.6.2 Samsung 512MB PC3200 DDR SDRAM DIMM (CL3, RAM mhux ġenwin) https://www.devicelog.com/mt/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/ https://www.devicelog.com/mt/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/#comments Wed, 13 Mar 2013 08:31:50 +0000 https://www.devicelog.com/?p=717-mt Samsung DDR 512MB PC3200U-30331-B2 CL3 (non-genuine RAM)

Samsung DDR 512MB PC3200U-30331-B2 CL3 underside (non-genuine RAM)

  • Isem tal-prodott : Samsung DDR SDRAM 512MB PC3200 (partijiet mhux ġenwini)
  • Numru tal-parti : PC3200U-30331-B2 M368L6423ETM-CCC
  • Manifattur : Samsung Electronics (SEC)
  • Pajjiż tal-manifattura : Korea t'Isfel
  • Ibni sena/ġimgħa : 2003/33
  • Kapaċità tad-Data : 512MB
  • Veloċità tal-arloġġ : 400Mhz (PC3200)
  • Karatteristiċi : 184pin, Unbuffered Non-ECC DDR SDRAM DIMM
  • Kompożizzjoni taċ-ċippa tad-dejta : [SEC K4H560838E-TCCC] ✕ 8 ċipep
  • Banek tad-dejta : 4 banek
  • Aġġorna l-intervall : 7.8μs (8Aġġorna K/64ms)
  • Aqra latenza : 3 arloġġ (CL3)
  • Tul tal-fqigħ : 2, 4, 8
  • Tip ta 'fqigħ : sekwenzjali & interleave
  • Ċiklu massimu ta 'aġġornament tal-fqigħ : 8
  • VDD, VDDQ : 2.6V ± 0.1V
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