DDR – DeviceLog.com

HIS Radeon RX560 14CU GREEN iCooler OC GDDR5 2GB

DeviceLog.com — Sun, 25 Dec 2022 05:15:29 +0000

Product Name	HIS Radeon RX560 14CU GREEN iCooler OC D5 2GB
Product Code	HS-560J2SCNR
EAN Code	489 51390 12361
Realease Date	2016.8.8.
Chipset Manufacturer	AMD(ATi)
Board Manufacturer	Hightech Informaion System Ltd. (HIS)
Country of Manufacture	China
Memory Manufacturer	Elpida Memory, Inc.
Chipset/GPU Model	AMD Radeon RX 560 Series AMD Radeon HD 560
GPU Code name	Baffin (Polaris 11)
GPU Revision	CF
GPU Technology	14nm
GPU Die Size	123mm²
GPU Subvendor	ATI AIB
GPU Clock	Base : 1145Mhz OC : 1196Mhz Boost : 1176 MHz
Stream Processors (Compute Units)	896 (14CU)
Video RAM Type	GDDR5
Video RAM Size	2048MB (2GB)
Video RAM Clock	1500Mhz
Bus Interface	PCI Express 3.0 x 8
Bus Width	128bit
Bus Speed	7.0Gbps (112GB/s)
Computing Technologies	OpenGL, DirectCompute, DirectML, Vulkan
Power Consumption	Max. 46W
Recommended Power Supply	400W+
Cooler	iCooler ( Two Slot 0dB , 11 x Fan-blades)
Video Connectors	DVI × 1 HDMI × 1 DisplayPort(DP) × 1
Maximum Resolution (per Display)	DP 1.4 : 5120 × 2880 @ 60Hz HDMI 2.0b : 4096 × 2160 @ 60Hz Dual-Link DVI-D Port : 2560 × 1600 @ 60Hz
Features	• Zero Fan Function • Width: 170mm • Height: 35mm

EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6

DeviceLog.com — Tue, 23 Mar 2021 10:30:05 +0000

Product Name	EK Memory 2GB DDR SO-DIMM PC2-5300 CL5
Part Number	EKM256S74BP8-E6
Manufacturer	EK Memory
Country of Manufacture	Taiwan
Chip Build Year/Week	2008/27
Memory Module Type	DDR2 SO-DIMM 200 pin
Data Capacity	2GB
Clock Speed	667Mhz (PC2-5300)
Memory Timing	CL=5, tRCD=5, tRP=5
Features	200pin Unbuffered Non-ECC Notebook(Laptop) Memory
Data Bits	x64
Data Chip info	EK20908A8A-3EG 20827 XCG248-UA3G
Package	FBGA (Fine-pitch BGA)
VDD Voltage	1.8V

Samsung 16GB DDR4 SDRAM UDIMM 2Rx8 PC4-21300 (PC4-2666V-UB1-11) (M378A2K43CB1-CTD)

DeviceLog.com — Wed, 06 Nov 2019 07:38:24 +0000

Product Name	Samsung DDR4 SDRAM 16GB 2R×8 PC4-21300 (PC4-2666V-UB1-11)
Part Number	M378A2K43CB1-CTD (C-die)
Manufacturer	Samsung Electronics
Country of Manufacture	China
Build Year/Week	2019 / 06
DIMM type	UDIMM
Data Capacity	16GB
Data Rate (Max Bandwidth)	2666.67 MT/s (21333.33 MB/s)
Memory Timing (CL – tRCD – tRP – tRAS – tRC)	19-19-19-43-61
Features	288pin, Unbuffer Non-ECC DDR4 SDRAM DIMM
Data Bits	x64
Internal Module Banks	16 Banks (4 Bank Groups)
Ranks	2 (Dual Rank)
Component Composition	(1G × 8) × 16 (K4A8G085WC-BCTD) × 16
Package	78FBGA with Lead-Free & Halogen-Free (RoHS compliant)
Height	31.25 mm
VDD Voltage	1.2 V ± 0.06 V
Operating Case Temperature Range	Average Refresh Period 7.8us at lower then T_CASE 85℃, 3.9us at 85℃ < T_CASE ≤ 95℃

Samsung 8GB DDR4 SDRAM UDIMM 1Rx8 PC4-21300 (PC4-2666V-UA2-11) (M378A1K43CB2-CTD)

DeviceLog.com — Tue, 05 Nov 2019 11:07:57 +0000

Product Name	Samsung DDR4 SDRAM 8GB 1R×8 PC4-21300 (PC4-2666V-UA2-11)
Part Number	M378A1K43CB2-CTD (C-die)
Manufacturer	Samsung Electronics
Country of Manufacture	China
Build Year/Week	2018 / 28
DIMM type	UDIMM
Data Capacity	8GB
Data Rate (Max Bandwidth)	2666.67 MT/s (21333.33 MB/s)
Memory Timing (CL – tRCD – tRP – tRAS – tRC)	19-19-19-43-61
Features	288pin, Unbuffer Non-ECC DDR4 SDRAM DIMM
Data Bits	x64
Internal Module Banks	16 Banks (4 Bank Groups)
Ranks	1 (Single Rank)
Component Composition	(1G × 8) × 8 (K4A8G085WC-BCTD) × 8
Package	78FBGA with Lead-Free & Halogen-Free (RoHS compliant)
Height	30mm
VDD Voltage	1.2V ± 0.06V
Operating Case Temperature Range	Average Refresh Period 7.8us at lower then T_CASE 85℃, 3.9us at 85℃ < T_CASE ≤ 95℃

Samsung 2GB DDR2 SDRAM DIMM 2Rx8 PC2-6400 (M378T5663QZ3-CF7)

DeviceLog.com — Sat, 04 Jun 2016 15:17:04 +0000

Product Name	Samsung DDR2 SDRAM 2GB 2R×8 PC2-6400
Part Number	M378T5663QZ3-CF7
Manufacturer	Samsung Electronics
Country of Manufacture	China
Build Year/Week	2009/04, 2010/07
Memory Module Type	DIMM
Data Capacity	2GB
Clock Speed	800Mhz (PC2-6400)
Memory Timing	CL=6, tRCD=6, tRP=6
Features	240pin, Unbuffer Non-ECC DDR2 SDRAM DIMM
Data Bits	x64
Internal Module Banks	8
Ranks	2
Data Chip Composition (Depth × Bit organization × pcs)	128M × 8 × 16pcs (K4T1G084QQ × 16pcs)
Package	60FBGA with Lead-Free and Halogen-Free (RoHS compliant)
Height	30mm
VDD Voltage	1.8V ± 0.1V
Operating Case Temperature Range	0°C ~ 95°C

Samsung 512MB PC3200 DDR SDRAM DIMM (CL3, non-genuine RAM)

DeviceLog.com — Wed, 13 Mar 2013 08:31:50 +0000

Product name : Samsung DDR SDRAM 512MB PC3200 (non-genuine parts)
Part number : PC3200U-30331-B2 M368L6423ETM-CCC
Manufacturer : Samsung Electronics (SEC)
Country of manufacture : South Korea
Build year/week : 2003/33
Data Capacity : 512MB
Clock speed : 400Mhz (PC3200)
Features : 184pin, Unbuffered Non-ECC DDR SDRAM DIMM
Data chip composition : [SEC K4H560838E-TCCC] ✕ 8 chips
Data banks : 4 banks
Refresh interval : 7.8μs (8K/64ms refresh)
Read latancy : 3 clock (CL3)
Burst length : 2, 4, 8
Burst type : sequential & interleave
Maximum burst refresh cycle : 8
VDD, VDDQ : 2.6V ± 0.1V

EKmemory 2GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (2Rx8)

DeviceLog.com — Sun, 03 Mar 2013 06:14:35 +0000

Product name : EKmemory DDR3 SDRAM 2GB 2Rx8 PC3-10600U-9-10-B0
Manufacturer : EKmemory
Country of manufacture : South Korea
Data Capacity : 2GB
Clock speed : 1333Mhz (PC3-10600)
Features : 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM
Data chip composition : [EKM324L28BP8-13] ✕ 16 chips
VDD voltage : 1.5V
Homepage : http://www.ekmemory.com/bbs/view.php?id=dram&no=91

Samsung 4GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (2Rx8, Korea)

DeviceLog.com — Thu, 10 Jan 2013 02:20:09 +0000

Product name	Samsung 4GB DDR3 SDRAM PC3-10600 Memory (2Rx8, PC3-10600U-09-10-A0, M378B5273DH0-CH9, M378B5273DH1)
Manufacturer	Samsung Electronics (SEC)
Country of manufacture	South Korea
Build year/week	2011/31
Data Capacity	4GB
Clock speed	1333Mhz (PC3-10600)
Memory Timing	CL=9, tRCD=9, tRP=9
Features	240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM
Data bits	x64
Depth / Bit organization	512M / x8
Internal Module banks	8
Ranks	2
Data chip composition	[SEC HCH9 K4B2G0846D] ✕ 16 chips (256Mbit ✕ 8 ✕ 16 pcs)
Component revision	4th generation
Package	FBGA (Lead-free & Halogen-free)
Height	30mm
VDD voltage	1.5V
Operating Case Temperature Range	0°C ~ 85°C

A-DATA Vitesta 512MB DDR600 DIMM (PC4800)

DeviceLog.com — Thu, 25 Oct 2012 01:49:42 +0000

A-DATA Vitesta DDR600 Viesta Memory, in DDR SDRAM memory modules, firstly achieved 600Mhz clock speed with Samsung TCCD memory chips. The data capacity of A-data Viesta was 512MB or 256MB. It was mostly used for ovcrclocking.

Product Name
- A-DATA Vitesta DDR600 512MB
Part Number
- MDOSSLF3H47A0B1G0Z
Manufacturer
- A-DATA
Country of manufacture
- Taiwan
Build Year
- 2004
Features
- 184pin
- Unbuffer Non-ECC DDR SDRAM
Data Capacity
- 512MB
Clock speed
- 600Mhz (PC4800)
Voltage
- 2.8±0.1V
Chip Composition
- Samsung TCCD 16 chips
PCB Height
- 31.75mm, 6 layers
Operating Case Temperature Range
- 0~95℃
Module bank
- 2 physical bank

ELPIDA 2GB DDR3 SDRAM SO-DIMM PC3-10600S-9-10-F1

DeviceLog.com — Fri, 09 Mar 2012 07:39:10 +0000

Product Name : ELPIDA 2GB 2Rx8 PC3-10600S-9-10-F1
Part Number : EBJ21UE8BFU0-DJ-F
Manufacturer : ELPIDA
Country of manufacture : Taiwan
Build Year/Week : 2010/38
Form Factor : DDR3 SO-DIMM
Features : 204pin, Non-ECC
Memory Capacity : 2GB
Max Data Rate : 1333Mbps
Voltage : 1.5V
Organization : 256M words × 64 bits, 2 ranks
Chip Composition : J1108BFBG-DJ-F × 16
Latency (CL-tRCD-tRP) : 9-9-9
PCB Height : 30mm
Operating Case Temperature Range : 0~95℃