DDR3 SDRAM – DeviceLog.com https://www.devicelog.com/mrj/ device, part, spec Tue, 23 Mar 2021 10:34:01 +0000 mrj hourly 1 https://wordpress.org/?v=6.6.2 Samsung 8GB PC3-12800 DDR3 SDRAM DIMM (2R×8, M378B1G73QH0-CK0) https://www.devicelog.com/mrj/memory/dram/ddr3-sdram/samsung-8gb-ddr3-sdram-pc3-12800u-11-12-b1-2rx8-m378b1g73qh0-ck0/ https://www.devicelog.com/mrj/memory/dram/ddr3-sdram/samsung-8gb-ddr3-sdram-pc3-12800u-11-12-b1-2rx8-m378b1g73qh0-ck0/#comments Fri, 20 Mar 2015 05:46:58 +0000 https://www.devicelog.com/?p=902-mrj Samsung 8GB DDR3 SDRAM 2R×8 PC3-12800U-11-12-B1 M378B1G73QH0-CK0 1408

Product name Samsung 8GB DDR3 SDRAM PC3-12800 8GB DIMM
(2Rx8, PC3-12800U-11-12-B1, M378B1G73QH0-CK0)
Manufacturer Samsung Electronics
Country of manufacture Philippine
Build year/week 2014/08
Data Capacity 8GB
Clock speed 1600Mhz (PC3-12800)
Memory Timing CL=11, tRCD=11, tRP=11
Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM
Production process technology 20, 30, 40nm
Data bits x64
Internal Module banks 8
Ranks 2
Data chip composition
(Depth × Bit organization × pcs)		 512M×8 × 16 pcs
(K4B4G0846Q-HCK0 × 16 pcs)
Package
78 FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
Height 30mm
VDD voltage 1.5V ± 0.075V
Operating Case Temperature Range 0°C ~ 95°C

 

]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-8gb-ddr3-sdram-pc3-12800u-11-12-b1-2rx8-m378b1g73qh0-ck0/feed/ 4 Samsung 4GB PC3-10600 DDR3 SDRAM SO-DIMM https://www.devicelog.com/mrj/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/ https://www.devicelog.com/mrj/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/#comments Mon, 02 Mar 2015 13:25:48 +0000 https://www.devicelog.com/?p=791-mrj Samsung Electronics released DDR3 SDRAM modules using the 30nm process technology in July 2010. This RAM module was made by the 40nm process technology.

Samsung SODIMM DDR3 PC3-10600 4GB frontside Samsung SODIMM DDR3 PC3-10600 4GB rearside

Product name Samsung DDR3 SDRAM PC3-10600 4GB SO-DIMM
(2Rx8, PC3-10600S-09-10-F2, M471B5273CH0-CH9)
Manufacturer Samsung Electronics (SEC)
Country of manufacture China
Build year/week 2011/13
Data Capacity 4GB
Clock speed 1333Mhz (PC3-10600)
Memory Timing CL=9, tRCD=9, tRP=9
Features 204pin, SODIMM, Unbuffer Non-ECC DDR3 SDRAM
Production process technology 40nm
Data bits x64
Internal Module banks 8
Ranks 2
Data chip composition 256M x 8 * 16 pcs
Component revision 2Gb, C-die
Package 78 ball FBGA
Height 30mm
VDD voltage 1.5V
Operating Case Temperature Range 0°C ~ 85°C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/feed/ 3 EKmemory 2GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (2Rx8) https://www.devicelog.com/mrj/memory/dram/ddr3-sdram/ekmemory-ddr3-2gb-pc3-10600-1333mhz-2rx8/ https://www.devicelog.com/mrj/memory/dram/ddr3-sdram/ekmemory-ddr3-2gb-pc3-10600-1333mhz-2rx8/#comments Sun, 03 Mar 2013 06:14:35 +0000 https://www.devicelog.com/?p=643-mrj EKmemory DDR3 2GB PC3-10600 1333Mhz (2Rx8) frontside

EKmemory DDR3 2GB PC3-10600 1333Mhz (2Rx8) backside

  • Product name : EKmemory DDR3 SDRAM 2GB 2Rx8 PC3-10600U-9-10-B0
  • Manufacturer : EKmemory
  • Country of manufacture : South Korea
  • Data Capacity : 2GB
  • Clock speed : 1333Mhz (PC3-10600)
  • Features : 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM
  • Data chip composition : [EKM324L28BP8-13] ✕ 16 chips
  • VDD voltage : 1.5V
  • Homepage : http://www.ekmemory.com/bbs/view.php?id=dram&no=91

EKmemory_DDR3_2GB_2Rx8_PC3-10600U-9-10-B0_package

]]> https://www.devicelog.com/memory/dram/ddr3-sdram/ekmemory-ddr3-2gb-pc3-10600-1333mhz-2rx8/feed/ 1 Samsung 4GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (2Rx8, Korea) https://www.devicelog.com/mrj/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/ https://www.devicelog.com/mrj/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/#respond Thu, 10 Jan 2013 02:20:09 +0000 https://www.devicelog.com/?p=602-mrj Samsung DDR3 SDRAM 4GB Memory DIMM (2Rx8 PC3-10600U-09-11-B1 M378B5273DH0-CH9 1131)

Product name Samsung 4GB DDR3 SDRAM PC3-10600 Memory
(2Rx8, PC3-10600U-09-10-A0, M378B5273DH0-CH9, M378B5273DH1)
Manufacturer Samsung Electronics (SEC)
Country of manufacture South Korea
Build year/week 2011/31
Data Capacity 4GB
Clock speed 1333Mhz (PC3-10600)
Memory Timing CL=9, tRCD=9, tRP=9
Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM
Data bits x64
Depth / Bit organization 512M / x8
Internal Module banks 8
Ranks 2
Data chip composition [SEC HCH9 K4B2G0846D] ✕ 16 chips
(256Mbit ✕ 8 ✕ 16 pcs)
Component revision 4th generation
Package FBGA (Lead-free & Halogen-free)
Height 30mm
VDD voltage 1.5V
Operating Case Temperature Range 0°C ~ 85°C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/feed/ 0 Samsung 2GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (1Rx8, China) https://www.devicelog.com/mrj/memory/dram/ddr3-sdram/samsung-ddr3-sdram-2gb-pc3-10600-1333mhz-1rx8-china/ https://www.devicelog.com/mrj/memory/dram/ddr3-sdram/samsung-ddr3-sdram-2gb-pc3-10600-1333mhz-1rx8-china/#comments Wed, 09 Jan 2013 14:20:55 +0000 https://www.devicelog.com/?p=557-mrj Samsung DDR3 SDRAM 2GB 1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9

Product name Samsung DDR3 SDRAM PC3-10600 2GB Memory
(1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9 M378B5263DH1)
Manufacturer Samsung Electronics
Country of manufacture China
Build year/week 2010/38
Data Capacity 2GB
Clock speed 1333Mhz (PC3-10600)
Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM
Production process technology 40nm
Data bits x64
Internal Module banks 8
Data chip composition [SEC HCH9 K4B2G0846C] ✕ 8 chips
Depth / Bit organization 256M / x8
Component revision 4th generation
Package FBGA (Lead-free & Halogen-free)
Height 30mm
VDD voltage 1.5V
Operating Case Temperature Range 0°C ~ 85°C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-ddr3-sdram-2gb-pc3-10600-1333mhz-1rx8-china/feed/ 6 ELPIDA 2GB DDR3 SDRAM SO-DIMM PC3-10600S-9-10-F1 https://www.devicelog.com/mrj/memory/dram/ddr3-sdram/elpida-ddr3-so-dimm-2gb-pc3-10600s-9-10-f1/ https://www.devicelog.com/mrj/memory/dram/ddr3-sdram/elpida-ddr3-so-dimm-2gb-pc3-10600s-9-10-f1/#comments Fri, 09 Mar 2012 07:39:10 +0000 https://www.devicelog.com/?p=256-mrj ELPIDA DDR3 2GB 2Rx8 PC10600-9-10-F1 Frontside

ELPIDA DDR3 2GB 2Rx8 PC10600-9-10-F1 Rear

  • Product Name : ELPIDA 2GB 2Rx8 PC3-10600S-9-10-F1
  • Part Number : EBJ21UE8BFU0-DJ-F
  • Manufacturer : ELPIDA
  • Country of manufacture : Taiwan
  • Build Year/Week : 2010/38
  • Form Factor : DDR3 SO-DIMM
  • Features : 204pin, Non-ECC
  • Memory Capacity : 2GB
  • Max Data Rate : 1333Mbps
  • Voltage : 1.5V
  • Organization : 256M words × 64 bits, 2 ranks
  • Chip Composition : J1108BFBG-DJ-F × 16
  • Latency (CL-tRCD-tRP) : 9-9-9
  • PCB Height : 30mm
  • Operating Case Temperature Range : 0~95℃
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/elpida-ddr3-so-dimm-2gb-pc3-10600s-9-10-f1/feed/ 6