SO-DIMM – DeviceLog.com https://www.devicelog.com/lb/ device, part, spec Tue, 23 Mar 2021 10:33:05 +0000 lb hourly 1 https://wordpress.org/?v=6.6.2 EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6 https://www.devicelog.com/lb/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/ https://www.devicelog.com/lb/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/#respond Tue, 23 Mar 2021 10:30:05 +0000 https://www.devicelog.com/?p=1311-lb EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6

Produit Numm EK Erënnerung 2GB DDR SO-DIMM PC2-5300 CL5
Deel Zuel EKM256S74BP8-E6 Ubidder
Fabrikant beschwéiert EK Memory
Land vun Fabrikatioun Taiwan
Chip Build Joer / Woch 2008/27
Erënnerung Modul Typ DDR2 SO-DIMM 200 pin
Daten Kapazitéit 2GB
Auer Speed 667Mhz (PC2-5300)
Erënnerung Timing CL=5, tRCD=5, tRP=5
Eegeschaften 200pin
Ongebuffert
Non-ECC
Notizbuch(Laptop) Erënnerung
Daten Stécker x64
Daten Chip Infoen EK20908A8A-3EG Fotoen
20827
XCG248-UA3G Fotoen
Package FBGA (Fein-Pitch BGA)
Vdd Spannung 1.8V

 

]]> https://www.devicelog.com/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/feed/ 0 Samsung 4GB PC3-10600 DDR3 SDRAM SO-DIMM https://www.devicelog.com/lb/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/ https://www.devicelog.com/lb/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/#comments Mon, 02 Mar 2015 13:25:48 +0000 https://www.devicelog.com/?p=791-lb Samsung Electronics verëffentlecht DDR3 SDRAM Moduler mat der 30nm Prozesstechnologie am Juli 2010. This RAM module was made by the 40nm process technology.

Samsung SODIMM DDR3 PC3-10600 4GB frontside Samsung SODIMM DDR3 PC3-10600 4GB rearside

Produit Numm Samsung DDR3 SDRAM PC3-10600 4GB SO-DIMM
(2rx8, PC3-10600S Fotoen-09-10-F2, M471B5273CH0-CH9)
Fabrikant beschwéiert Samsung Electronics (SEC)
Land vun Fabrikatioun China
Baut Joer / Woch 2011/13
Daten Kapazitéit 4GB
Auer Vitesse 1333Mhz (PC3-10600)
Erënnerung Timing CL=9, tRCD=9, tRP=9
Eegeschaften 204pin, SODIMM, Non-ECC DDR3 SDRAM Unbuffer
Produktioun Prozess Technologie 40nm vun
Daten Bits x64
Intern Modul Banken 8
Rank 2
Daten Chip Zesummesetzung 256M x 8 * 16 pcs
Komponent Revisioun 2Gb, C-déif
Package 78 Ball FBGA
Héicht 30mm
VDD Spannung 1.5V
Operatioun Fall Temperatur Range 0°C ~ 85°C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/feed/ 3 ELPIDA 2GB DDR3 SDRAM SO-DIMM PC3-10600S-9-10-F1 https://www.devicelog.com/lb/memory/dram/ddr3-sdram/elpida-ddr3-so-dimm-2gb-pc3-10600s-9-10-f1/ https://www.devicelog.com/lb/memory/dram/ddr3-sdram/elpida-ddr3-so-dimm-2gb-pc3-10600s-9-10-f1/#comments Fri, 09 Mar 2012 07:39:10 +0000 https://www.devicelog.com/?p=256-lb ELPIDA DDR3 2GB 2Rx8 PC10600-9-10-F1 Frontside

ELPIDA DDR3 2GB 2Rx8 PC10600-9-10-F1 Rear

  • Produit Numm : ELPIDA 2GB 2Rx8 PC3-10600S-9-10-F1
  • Deel Zuel : Spezifikatioune vun EBJ21UE8BFU0-DJ-F
  • Fabrikant beschwéiert : ELPIDA
  • Land vun Fabrikatioun : Taiwan
  • Bau Joer / Woch : 2010/38
  • Form Faktor : DDR3 SO-DIMM
  • Eegeschaften : 204pin, Non-ECC
  • Erënnerung Kapazitéit : 2GB
  • Max Daten Taux : 1333Mbps
  • Stroumspannung : 1.5V
  • Organisatioun : 256M Wierder × 64 Stécker, 2 rangéiert
  • Chip Zesummesetzung : J1108BFBG-DJ-F × 16
  • Latenz (CL-tRCD-tRP) : 9-9-9
  • PCB Héicht : 30mm
  • Operatioun Fall Temperatur Range : 0~95℃
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