Ram – DeviceLog.com https://www.devicelog.com/lb/ device, part, spec Sun, 01 Jan 2023 09:16:25 +0000 lb hourly 1 https://wordpress.org/?v=6.6.2 HIS Radeon RX560 14CU GREEN iCooler OC GDDR5 2GB https://www.devicelog.com/lb/output/vga/pci-express/his-radeon-rx560-14cu-green-icooler-oc-gddr5-2gb/ https://www.devicelog.com/lb/output/vga/pci-express/his-radeon-rx560-14cu-green-icooler-oc-gddr5-2gb/#respond Sun, 25 Dec 2022 05:15:29 +0000 https://www.devicelog.com/?p=1382-lb HIS RADEON RX560 GREEN iCooler OC GDDR5 2GB

Produit Numm HIS Radeon RX560 14CU GREEN iCooler OC D5 2GB
Produit Code Spezifikatioune vun HS-560J2SCNR
EAN Code 489 51390 12361
Verëffentlechungsdatum 2016.8.8.
Chipset Hiersteller AMD(Mir haten)
Verwaltungsrot Fabrikant Hightech Information System Ltd. (HEI)
Land vun Fabrikatioun China
Erënnerung Fabrikant beschwéiert Elpida Erënnerung, Inc.
Chipset / GPU Modell AMD Radeon RX 560 Serie
AMD Radeon HD 560
GPU Code Numm Baachenderen (Polaris 11)
GPU Revisioun CF
GPU Technologie 14nm vun
GPU Die Gréisst 123mm²
GPU Ënnervendor AN AIB
GPU Auer Base : 1145Mhz
OC : 1196Mhz
Boost : 1176 MHz
Stream Prozessoren
(Berechnen Eenheeten)		 896 (14CU)
Video RAM Typ GDDR5
Video RAM Gréisst 2048MB (2GB)
Video RAM Auer 1500Mhz
Bus Interface PCI Express 3.0 x8 vun
Bus Breet 128bëssen
Bus Geschwindegkeet 7.0Gbps (112GB/s)
Rechentechnologien OpenGL, DirectCompute, DirectML, Vulkan
Stroumverbrauch Max. 46W
Recommandéiert Energieversuergung 400W+
Cooler iCooler ( Zwee Slot 0dB , 11 x Fan Blades)
Video Connectoren DVI × 1
HDMI × 1
DisplayPort(DP) × 1
Maximal Resolutioun
(pro Display)		 DP 1.4 : 5120 × 2880 @60Hz
HDMI 2.0b : 4096 × 2160 @60Hz
Dual-Link DVI-D Hafen : 2560 × 1600 @60Hz
Eegeschaften • Zero Fan Funktioun
• Breet: 170mm
• Héicht: 35mm

HIS RADEON RX560 14CU GREEN iCooler OC GDDR5 2GB HIS RADEON RX560 14CU GREEN iCooler OC GDDR5 2GB HIS RADEON RX560 14CU GREEN iCooler OC GDDR5 2GB HIS RADEON RX560 14CU GREEN iCooler OC GDDR5 2GB HIS RADEON RX560 14CU GREEN iCooler OC GDDR5 2GB HIS RADEON RX560 14CU GREEN iCooler OC GDDR5 2GB

]]> https://www.devicelog.com/output/vga/pci-express/his-radeon-rx560-14cu-green-icooler-oc-gddr5-2gb/feed/ 0 LG Semicon 16MB SDRAM DIMM PC66 (GMM2642233BLTG-10K 7101S Fotoen) https://www.devicelog.com/lb/memory/dram/sdram/lg-semicon-16mb-sdram-dimm-pc66-gmm2642233bltg-10k-7101s/ https://www.devicelog.com/lb/memory/dram/sdram/lg-semicon-16mb-sdram-dimm-pc66-gmm2642233bltg-10k-7101s/#respond Fri, 15 Jul 2022 08:54:09 +0000 https://www.devicelog.com/?p=1350-lb LG Semicon 9703 2Mx64 SDRAM GMM2642233BLTG-10K 7101SLG Semicon 9703 2Mx64 SDRAM 168pin DIMM

  • Produit Numm : LG SDRAM 16MB PC66
  • Deel Zuel : GMM2642233BLTG-10K 7101S Fotoen
  • Fabrikant beschwéiert : LG Semicon Co., Ltd.
  • Land vun Fabrikatioun : Südkorea
  • Baut Joer / Woch : 1997/03
  • Daten Kapazitéit : 16MB
  • Auer Vitesse : 66Mhz (PC66)
  • Eegeschaften : 168pin, Unbuffered Non-ECC SDRAM DIMM
  • Daten Chip Zesummesetzung : [Spezifikatioune vun GM72V16821BT10K] × 8 chips
    (2M × 64 Bit)
  • One Chip Kapazitéit : 2m x 8bit
  • VDD : 3.3V
]]> https://www.devicelog.com/memory/dram/sdram/lg-semicon-16mb-sdram-dimm-pc66-gmm2642233bltg-10k-7101s/feed/ 0 LG Semicon 16MB EDO-DRAM 72pin SIMM (Spezifikatioune vun GM71C17400CJ6) https://www.devicelog.com/lb/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/ https://www.devicelog.com/lb/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/#comments Mon, 11 Jul 2022 15:05:31 +0000 https://www.devicelog.com/?p=1336-lb LGS GM71C17400CJ6 16MB EDO-DRAM SIMM frontsideLGS GM71C17400CJ6 16MB EDO-DRAM SIMM backside

  • Fabrikant beschwéiert : LG Semicon Co., Ltd.
  • Land vun Fabrikatioun : Südkorea
  • Deel Zuel : ?
  • Form Faktor : SIMM
  • Eegeschaften : 72pin, EDO DRAM, Net-Paritéit
  • Erënnerung Kapazitéit : 16MB
  • Bandbreedung : 32bëssen
  • Speed : 60ns(tRAC)
  • Stroumspannung : 5V
  • Chip Zesummesetzung : GM71C17400CJ6 × 8
  • Chip Build Joer / Woch : 1998/27
  • One Chip Kapazitéit : 4M x 4bit
  • etc : Addonics®, SD816
]]> https://www.devicelog.com/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/feed/ 1 EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6 https://www.devicelog.com/lb/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/ https://www.devicelog.com/lb/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/#respond Tue, 23 Mar 2021 10:30:05 +0000 https://www.devicelog.com/?p=1311-lb EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6

Produit Numm EK Erënnerung 2GB DDR SO-DIMM PC2-5300 CL5
Deel Zuel EKM256S74BP8-E6 Ubidder
Fabrikant beschwéiert EK Memory
Land vun Fabrikatioun Taiwan
Chip Build Joer / Woch 2008/27
Erënnerung Modul Typ DDR2 SO-DIMM 200 pin
Daten Kapazitéit 2GB
Auer Speed 667Mhz (PC2-5300)
Erënnerung Timing CL=5, tRCD=5, tRP=5
Eegeschaften 200pin
Ongebuffert
Non-ECC
Notizbuch(Laptop) Erënnerung
Daten Stécker x64
Daten Chip Infoen EK20908A8A-3EG Fotoen
20827
XCG248-UA3G Fotoen
Package FBGA (Fein-Pitch BGA)
Vdd Spannung 1.8V

 

]]> https://www.devicelog.com/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/feed/ 0 Samsung 2GB DDR2 SDRAM DIMM 2Rx8 PC2-6400 (M378T5663QZ3-CF7) https://www.devicelog.com/lb/memory/dram/ddr2-sdram/samsung-2gb-ddr2-sdram-dimm-2rx8-pc2-6400-m378t5663qz3-cf7/ https://www.devicelog.com/lb/memory/dram/ddr2-sdram/samsung-2gb-ddr2-sdram-dimm-2rx8-pc2-6400-m378t5663qz3-cf7/#respond Sat, 04 Jun 2016 15:17:04 +0000 https://www.devicelog.com/?p=1116-lb Samsung DDR2 SDRAM 2GB 2Rx8 PC2-6400 (M378T5663QZ3-CF7)Samsung DDR2 SDRAM 2GB 2Rx8 PC2-6400 (M378T5663QZ3-CF7)

Produit Numm Samsung DDR2 SDRAM 2GB 2R × 8 PC2-6400
Deel Zuel M378T5663QZ3-CF7
Fabrikant beschwéiert Samsung Electronics
Land vun Fabrikatioun China
Bau Joer / Woch 2009/04, 2010/07
Erënnerung Modul Typ DIMM
Daten Kapazitéit 2GB
Auer Speed 800Mhz (PC2-6400)
Erënnerung Timing CL=6, tRCD=6, tRP=6
Eegeschaften 240pin, Unbuffer Non-ECC DDR2 SDRAM DIMM
Daten Stécker x64
Intern Modul Banken 8
Rank 2
Daten Chip Zesummesetzung
(Déift × Bit Organisatioun × St)		 128M × 8 × 16 Stéck
(K4T1G084QQ × 16 Stéck)
Package 60FBGA mat Bleiffräi an Halogenfräi
(Rohs konform)
Héicht 30mm
Vdd Spannung 1.8V±0,1V
Operatioun Fall Temperatur Range 0°C ~ 95°C

 

]]> https://www.devicelog.com/memory/dram/ddr2-sdram/samsung-2gb-ddr2-sdram-dimm-2rx8-pc2-6400-m378t5663qz3-cf7/feed/ 0 Samsung 4GB PC3-10600 DDR3 SDRAM SO-DIMM https://www.devicelog.com/lb/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/ https://www.devicelog.com/lb/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/#comments Mon, 02 Mar 2015 13:25:48 +0000 https://www.devicelog.com/?p=791-lb Samsung Electronics verëffentlecht DDR3 SDRAM Moduler mat der 30nm Prozesstechnologie am Juli 2010. This RAM module was made by the 40nm process technology.

Samsung SODIMM DDR3 PC3-10600 4GB frontside Samsung SODIMM DDR3 PC3-10600 4GB rearside

Produit Numm Samsung DDR3 SDRAM PC3-10600 4GB SO-DIMM
(2rx8, PC3-10600S Fotoen-09-10-F2, M471B5273CH0-CH9)
Fabrikant beschwéiert Samsung Electronics (SEC)
Land vun Fabrikatioun China
Baut Joer / Woch 2011/13
Daten Kapazitéit 4GB
Auer Vitesse 1333Mhz (PC3-10600)
Erënnerung Timing CL=9, tRCD=9, tRP=9
Eegeschaften 204pin, SODIMM, Non-ECC DDR3 SDRAM Unbuffer
Produktioun Prozess Technologie 40nm vun
Daten Bits x64
Intern Modul Banken 8
Rank 2
Daten Chip Zesummesetzung 256M x 8 * 16 pcs
Komponent Revisioun 2Gb, C-déif
Package 78 Ball FBGA
Héicht 30mm
VDD Spannung 1.5V
Operatioun Fall Temperatur Range 0°C ~ 85°C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/feed/ 3 Hyundai 4MB EDO DRAM 72pin SIMM (HYM532100AM-70 Ubidder) https://www.devicelog.com/lb/memory/dram/edo-dram/hyundai-72pin-4mb-edo-dram-simm-hym532100am-70/ https://www.devicelog.com/lb/memory/dram/edo-dram/hyundai-72pin-4mb-edo-dram-simm-hym532100am-70/#respond Fri, 15 Mar 2013 07:26:42 +0000 https://www.devicelog.com/?p=739-lb Hyundai 72pin 4MB EDO DRAM HYM532100AM-70 70ns Fast Page non-Parity SIMM

Hyundai 72pin 4MB EDO DRAM HYM532100AM-70 70ns Fast Page non-Parity SIMM

  • Fabrikant beschwéiert : Hyundai Electronics Industries Co., Ltd., Ltd.
  • Urbejo : 1994
  • Land vun Fabrikatioun : Südkorea
  • Deel Zuel : HYM532100AM-70 Ubidder
  • Form Faktor : SIMM
  • Memory Typ : EDO DRAM
  • Erënnerung Kapazitéit : 4MB
  • Bus Typ : Fast Page Memory (FPM)
  • Feeler Korrektur : Net-Paritéit
  • Pins : 72pin
  • Bandbreedung : 32bëssen
  • Latenz : 70ns (tRAC)
  • Stroumspannung : 5V
  • Chip Zesummesetzung : [HY514400A J-70 Fotoen] × 8
  • One Chip Kapazitéit : 1M x 4bit
]]> https://www.devicelog.com/memory/dram/edo-dram/hyundai-72pin-4mb-edo-dram-simm-hym532100am-70/feed/ 0 Samsung 32 MB SDRAM DIMM PC66 (KMM366S403BTN-G0 Ubidder) https://www.devicelog.com/lb/memory/dram/sdram/samsung-sdram-32mb-pc66-kmm366s403btn-g0/ https://www.devicelog.com/lb/memory/dram/sdram/samsung-sdram-32mb-pc66-kmm366s403btn-g0/#comments Thu, 14 Mar 2013 03:50:48 +0000 https://www.devicelog.com/?p=732-lb Samsung SDRAM 32MB PC66 KMM366S403BTN-G0

Samsung SDRAM 32MB PC66 KMM366S403BTN-G0 underside

  • Produit Numm : Samsung SDRAM 32 MB PC66
  • Deel Zuel : KMM366S403BTN-G0 Ubidder
  • Fabrikant beschwéiert : Samsung Electronics (SEC)
  • Land vun Fabrikatioun : Südkorea
  • Baut Joer / Woch : 1997/33
  • Daten Kapazitéit : 32MB
  • Auer Vitesse : 66Mhz (PC66)
  • Eegeschaften : 168pin, Unbuffered Non-ECC SDRAM DIMM
  • Daten Chip Zesummesetzung : [KM48S2020BT-G10 Ubidder] ✕ 16 chips
  • VDD : 3.3V
]]> https://www.devicelog.com/memory/dram/sdram/samsung-sdram-32mb-pc66-kmm366s403btn-g0/feed/ 1 Samsung 512MB PC3200 DDR SDRAM DIMM (CL3, net echt RAM) https://www.devicelog.com/lb/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/ https://www.devicelog.com/lb/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/#comments Wed, 13 Mar 2013 08:31:50 +0000 https://www.devicelog.com/?p=717-lb Samsung DDR 512MB PC3200U-30331-B2 CL3 (non-genuine RAM)

Samsung DDR 512MB PC3200U-30331-B2 CL3 underside (non-genuine RAM)

  • Produit Numm : Samsung DDR SDRAM 512 MB PC3200 (net echt Deeler)
  • Deel Zuel : PC3200U-30331-B2 M368L6423ETM-CCC
  • Fabrikant beschwéiert : Samsung Electronics (SEC)
  • Land vun Fabrikatioun : Südkorea
  • Baut Joer / Woch : 2003/33
  • Daten Kapazitéit : 512MB
  • Auer Vitesse : 400Mhz (PC3200)
  • Eegeschaften : 184pin, Unbuffered Non-ECC DDR SDRAM DIMM
  • Daten Chip Zesummesetzung : [SEC K4H560838E-TCCC] ✕ 8 chips
  • Datenbanken : 4 Banken
  • Erfrëschungsintervall : 7.8μs (8K/64ms erfrëschen)
  • Liesen latancy : 3 Auer (CL3)
  • Burst Längt : 2, 4, 8
  • Burst Typ : sequenziell & interleave
  • Maximum Burst Erfrëschungszyklus : 8
  • VDD, VDDQ : 2.6V±0,1V
]]> https://www.devicelog.com/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/feed/ 3 eKmemory 2GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (2rx8) https://www.devicelog.com/lb/memory/dram/ddr3-sdram/ekmemory-ddr3-2gb-pc3-10600-1333mhz-2rx8/ https://www.devicelog.com/lb/memory/dram/ddr3-sdram/ekmemory-ddr3-2gb-pc3-10600-1333mhz-2rx8/#comments Sun, 03 Mar 2013 06:14:35 +0000 https://www.devicelog.com/?p=643-lb EKmemory DDR3 2GB PC3-10600 1333Mhz (2Rx8) frontside

EKmemory DDR3 2GB PC3-10600 1333Mhz (2Rx8) backside

  • Produit Numm : EKmemory DDR3 SDRAM 2GB 2Rx8 PC3-10600U-9-10-B0
  • Fabrikant beschwéiert : EK Erënnerung
  • Land vun Fabrikatioun : Südkorea
  • Daten Kapazitéit : 2GB
  • Auer Vitesse : 1333Mhz (PC3-10600)
  • Eegeschaften : 240pin, Non-ECC DDR3 SDRAM DIMM unbuffer
  • Daten Chip Zesummesetzung : [EKM324L28BP8-13 Ubidder] ✕ 16 chips
  • VDD Spannung : 1.5V
  • Homepage : http://www.ekmemory.com/bbs/view.php?id=dram&nee = 91

EKmemory_DDR3_2GB_2Rx8_PC3-10600U-9-10-B0_package

]]> https://www.devicelog.com/memory/dram/ddr3-sdram/ekmemory-ddr3-2gb-pc3-10600-1333mhz-2rx8/feed/ 1