Samsung 256GB PM981 M.2 PCIe NVMe Leeschtung OEM SSD (Phoenix Controller)

Samsung PM981 ass den OEM Produkt ofgeleet vu Samsung 970 EVO.

Dësen Drive weist dem Samsung säin neien 64-Layer V-NAND an e High-Performance Controller deen bis zu 3,000 MB / s vun sequenziell liesen Débit an 270,000 zoufälleg liesen IOPS.

Samsung Polaris V2 Memory Controller gouf an der fréierer Versioun benotzt, but ARM Phoenix memory controller was used in the later version.

It was popular for a while because of its good value for money.

Produit Numm	Samsung 256GB PM981 M.2 PCIe NVMe Leeschtung OEM SSD
Deel Zuel	MZVLB256HAHQ-00000
Model	MZ-VLB2560
Realeased Year	2017
Fabrikant beschwéiert	Samsung
Land vun Fabrikatioun	China
Product Classification	Internal SSD (Solid State Drive)
Form Faktor	M.2 (2280)
Interface	PCIe 3.0 (x4) (32GT/s)
Host Controller Interface	NVMe 1.2
Catacity	256GB
Byte per Sector	512Byte
Memory Type	NAND Flash Memory, Tlc
NAND Structure	Samsung V-NAND V4 (TLC 3D NAND, 64-layers)
DRAM	○
SLC Caching	○
Performance	– Sequential Read : 3000MB/s – Sequential Write : 1800MB/s – IOPS for read : Max. 270k – IOPS for write : Max. 420k
Memory Controller	ARM Phoenix (S4LR020 S821HNQD 1842 ARM Phoenix)
NVMe Heat Sink	not included
UBER	< 1 sector per 10 15 bits read
MTBF	1.5 Million Hours
Temperature	Aktivitéitsaarbecht : 0°C ~ 70°C Non-operating : -40°C ~ 85°C
Humidity (non-condensing)	Non-operating : 5 ~ 95%
Linear Shock	Non-operating (0.5ms duration with 1/2 sine wave) : 1,500 Gpeak
Vibration	Non-operating (20 ~ 2,000 Hz, Sinusoidal) : 20 Gpeak
Voltage Ripple/Noise (max.)	100mV p-p
Stroumverbrauch	– Read (Typ, RMS) : 5.9W – Write (Typ, RMS) : 5.7W – Idle (Typ) : 30mW – L1.2 (Typ) : 5mW
Width	22.00 ± 0.15 mm
Length	80.00 ± 0.15 mm
Héicht	Max. 2.38 mm
Gewiicht	Max. 9.0g