Manufacturer : Hyundai Electronics Industries Co., Ltd. Aedificate Year : 1994 Patria OPIFICIUM : South Korea Part Number : HYM532100AM-70 Forma Factor : SIMM Memoria genus : Memoria Capacitas EDO DRAM : 4MB Bus type : Fast Page Memoria (FPM) Error correctionis : Non pari acus : 72pin Bandwidth : 32frenum Latency : 70ns (TRAC) Voltage […]

Product nomen : EKmemory DDR3 SDRAM 2GB 2Rx8 PC3-10600U-9-10-B0 Manufacturer : EKmemory patriae OPIFICIUM : Coreae Meridionalis Data Capacitas : 2GB Pro celeritate : 1333Mhz (PC3-10600) Features : 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Data compositione chip? : [EKM324L28BP8-13] ✕ 16 eu VDD voltage : 1.5V Homepage : http"://www.ekmemory.com/bbs/view.php?id = dram&no=91

KMM591000AN-7 componitur ex duobus KM44C1000AJ-7 xxxiii et unum KM44C1000CJ-7 chip. KMM591000BN-7 componitur cum duobus KM44C1000BJ-7 tribus et uno KM44C1000CJ-7 chip. Sunt 1MB DRAM SIMMs producti Samsung Electronics. Vestibulum Company : Product Electronics Product Year : 1992 / 1993 Patria OPIFICIUM : South Korea OMNIBUS Features : 30pin, SIMM, Pari RAM Memoria Capacitas […]

EDO DRAM habet tempus memoriae spatium pro citius notitia I / O. Efficax est cum ratio memoriam cache auxilium capere non potest. Sed si ratio cache memoriam habet, effectus est parum EDO DRAM. Manufacturer : Hyundai Electronics Industries Co., Ltd. Aedificate Year / Week : 1997/32 Patria OPIFICIUM : Corea (South Korea) Pars Number […]

Hoc ram 30-pin 1MB SIMM produci industriam cursus(Hynix nunc). 30-pin SIMMs sunt usus ab omnibus 80286 to 80486. Si numerus eu est impar, unum praestare eu pari reprehendo. Hoc aries constat ex duobus HY514400A(1M x 4bit) unum HY531000A(1M x 1bit). Facultatem in memoriam […]