https://www.devicelog.com/la/ device, part, spec Wed, 06 Nov 2019 11:16:37 +0000 la hourly 1 https://wordpress.org/?v=6.6.2 https://www.devicelog.com/la/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/ https://www.devicelog.com/la/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/#comments Wed, 06 Nov 2019 07:38:24 +0000 https://www.devicelog.com/?p=1233-la

Product Name	Samsung DDR4 SDRAM 16GB 2r × VIII PC4-21300 (PC4-2666V-UB1-11)
Pars Number	M378A2K43CB1-CTD (C-die)
Manufacturer	Samsung Electronics
Patria Fabrica	China
Aedificate Year / Week	2019 / 06
Dimm Type	Udimm
Data Capacitas	16GB
Rate notitia (Max Bandwidth)	2666.67 MT/s (21333.33 MB/s)
Memoria Timing (CL – tRCD – tRP – post – tRC *)	19-19-19-43-61
Features	288pin, DDR4 DDR4 DDR4 DDR4 DNM
Data Bits	x64
Internus Module Banks	16 Ripas (4 Ripam coetibus)
Ranks	2 (Dual Rank)
Compositio	(1G × 8) × 16 (K4A8G085WC, BCTD) × 16
sarcina	78FBGA cum plumbum, liber & Halogen (RoHS facilis)
Altitudo	31.25 mm
VDD Voltage	1.2 V ± 0.06 V
|	Mediocris Renovare tempus 7.8US ad inferiorem deinde TCasus 85℃, 3.9US ad LXXXV ℃ < TCasus ≤ XCV ℃

 

]]> https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/feed/ 1 https://www.devicelog.com/la/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/ https://www.devicelog.com/la/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/#respond Tue, 05 Nov 2019 11:07:57 +0000 https://www.devicelog.com/?p=1215-la

Product Name	Samsung DDR4 SDRAM 8GB 1R×8 PC4-21300 (PC4-2666V-UA2-11)
Pars Number	M378A1K43CB2-CTD (C-die)
Manufacturer	Samsung Electronics
Patria Fabrica	China
Aedificate Year / Week	2018 / 28
Dimm Type	Udimm
Data Capacitas	8GB
Rate notitia (Max Bandwidth)	2666.67 MT/s (21333.33 MB/s)
Memoria Timing (CL – tRCD – tRP – post – tRC *)	19-19-19-43-61
Features	288pin, DDR4 DDR4 DDR4 DDR4 DNM
Data Bits	x64
Internus Module Banks	16 Ripas (4 Ripam coetibus)
Ranks	1 (Unius Rank)
Compositio	(1G × 8) × 8 (K4A8G085WC, BCTD) × 8
sarcina	78FBGA cum plumbum, liber & Halogen (RoHS facilis)
Altitudo	30mm
VDD Voltage	1.2V ± 0.06V
|	Mediocris Renovare tempus 7.8US ad inferiorem deinde TCasus 85℃, 3.9US ad LXXXV ℃ < TCasus ≤ XCV ℃

 

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