Product name Samsung DDR3 SDRAM PC3-10600 2GB Memory (1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9 M378B5263DH1) Manufacturer Samsung Electronics Country of manufacture China Build year/week 2010/38 Data Capacity 2GB Clock speed 1333Mhz (PC3-10600) Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Production process technology 40nm Data bits x64 Internal Module banks 8 Data chip composition [SEC HCH9 K4B2G0846C] ✕ 8 chips […]

Navê hilberê : ELPIDA 2GB 2Rx8 PC3-10600S-9-10-F1 Part Number : EBJ21UE8BFU0-DJ-F Manufacturer : ELPIDA Country of manufacture : Taiwan Build Year/Week : 2010/38 Form Factor : DDR3 SO-DIMM Features : 204derzî, Non-ECC Memory Capacity : 2GB Max Data Rate : 1333Mbps Voltage : 1.5V Organization : 256M words × 64 bits, 2 ranks Chip Composition : J1108BFBG-DJ-F […]

EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little. Çêker : Hyundai Electronics Industries Co., Ltd. Sal / Hefteya Avakirinê : 1997/32 Welatê çêkirinê : Koreya (South Korea) Hejmara Part […]

This SIMM plated with golden color. The plating color and the board form of this SIMM is different from the SIMM with GM71C4400A. GM71C4400B is 1M × 4bit. And GM71C1000B is 1M × 4bit. The memory capacity and the function of this SIMM is not different from the SIMM with GM71C4400A and GM71C1000. Manufacturing […]

Goldstar is the trademark of Goldstar Electron Co., Ltd. It changed its name into LG Semiconductor (LG Semicon) at 1995, and it was merged into Hyundai Electronics industry (Hynix of now) at 1999. Manufacturing Company : Goldstar Electron Manufactured year: 1993 Welatê çêkirinê : South Korea Module Features : 30derzî, DRAM, SIMM, Parity RAM […]