bîr – DeviceLog.com https://www.devicelog.com/ku/ device, part, spec Mon, 25 Jul 2022 04:37:45 +0000 ku hourly 1 https://wordpress.org/?v=6.6.2 EK bîra 2 GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (2Rx8) https://www.devicelog.com/ku/memory/dram/ddr3-sdram/ekmemory-ddr3-2gb-pc3-10600-1333mhz-2rx8/ https://www.devicelog.com/ku/memory/dram/ddr3-sdram/ekmemory-ddr3-2gb-pc3-10600-1333mhz-2rx8/#comments Sun, 03 Mar 2013 06:14:35 +0000 https://www.devicelog.com/?p=643-ku EKmemory DDR3 2GB PC3-10600 1333Mhz (2Rx8) frontside

EKmemory DDR3 2GB PC3-10600 1333Mhz (2Rx8) backside

  • Navê hilberê : EKmemory DDR3 SDRAM 2GB 2Rx8 PC3-10600U-9-10-B0
  • Çêker : EKbîr
  • Welatê çêkirinê : Koreya Başûr
  • Kapasîteya daneyê : 2GB
  • Leza saetê : 1333Mhz (PC3-10600)
  • Features : 240derzî, Unbuffer Non-ECC DDR3 SDRAM DIMM
  • Pêkhatina çîpê daneyê : [EKM324L28BP8-13] ✕ 16 chips
  • voltaja VDD : 1.5V
  • Homepage : http://www.ekmemory.com/bbs/view.php?id=dram&no=91

EKmemory_DDR3_2GB_2Rx8_PC3-10600U-9-10-B0_package

]]> https://www.devicelog.com/memory/dram/ddr3-sdram/ekmemory-ddr3-2gb-pc3-10600-1333mhz-2rx8/feed/ 1 Samsung SDHC Class 10 32 GB ya bingehîn https://www.devicelog.com/ku/storage/memory-card/sd/sdhc/samsung-sdhc-class-10-essential-32gb/ https://www.devicelog.com/ku/storage/memory-card/sd/sdhc/samsung-sdhc-class-10-essential-32gb/#respond Sat, 02 Mar 2013 16:03:37 +0000 https://www.devicelog.com/?p=625-ku Samsung SDHC Essential 32GB Class 10 Package

Samsung SDHC Essential 32GB Class 10 Frontside

Samsung SDHC Essential 32GB Class 10 Backside

  • Navê hilberê : Samsung SDHC Class 10 32 GB ya bingehîn
  • Navê modelê : MB-SSBGA/KR
  • Çêker : Samsung Electronics
  • Welatê çêkirinê : Koreya Başûr
  • Cureyê bîrê : SDHC
  • Mezinayî : 32mm x 24 mm x 2,1 mm
  • Kapasîteya daneyê : 32GB (2923GiB, 29927MiB)
  • Leza xwendinê : Max. 24MB / s
  • Leza nivîsandinê : Max. 13MB / s
  • voltaja destûr : 2.7 ~ 3.6V
  • Rêjeya germahiya xebitandinê / ne-xebatê : -25 ~ 85°C / -40 ~ 85°C
]]> https://www.devicelog.com/storage/memory-card/sd/sdhc/samsung-sdhc-class-10-essential-32gb/feed/ 0 Samsung 4GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (2Rx8, Koreya) https://www.devicelog.com/ku/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/ https://www.devicelog.com/ku/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/#respond Thu, 10 Jan 2013 02:20:09 +0000 https://www.devicelog.com/?p=602-ku Samsung DDR3 SDRAM 4GB Memory DIMM (2Rx8 PC3-10600U-09-11-B1 M378B5273DH0-CH9 1131)

Navê hilberê Samsung 4GB DDR3 SDRAM PC3-10600 Bîra
(2Rx8, PC3-10600U-09-10-A0, M378B5273DH0-CH9, M378B5273DH1)
Çêker Samsung Electronics (SEC)
Welatê çêkirinê Koreya Başûr
Sal / hefte ava bikin 2011/31
Kapasîteya daneyê 4GB
Leza saetê 1333Mhz (PC3-10600)
Demê bîranînê CL=9, tRCD=9, tRP=9
Features 240derzî, Unbuffer Non-ECC DDR3 SDRAM DIMM
Bitikên daneyê x64
Kûrî / Rêxistina bit 512M / x8
bankên Modula Navxweyî 8
Ranks 2
Pêkhatina çîpê daneyê [SEC HCH9 K4B2G0846D] ✕ 16 chips
(256Mbit ✕ 8 ✕ 16 pcs)
Revision Component 4nifşê th
Pakêt FBGA (Lead-free & Bê halojen)
Bilindî 30mm
voltaja VDD 1.5V
Operating Case Temperature Range 0°C ~ 85 °C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/feed/ 0 UMC Sync Cache Module 256KB (Pipeline Burst Cache, Derav) https://www.devicelog.com/ku/memory/sram/umc-sync-cache-module-256kb-pipeline-burst-cache/ https://www.devicelog.com/ku/memory/sram/umc-sync-cache-module-256kb-pipeline-burst-cache/#comments Sat, 05 Jan 2013 13:27:32 +0000 https://www.devicelog.com/?p=535-ku UMC Sync Cache Module 256KB Frontside (Pipeline Burst Cache)

UMC Sync Cache Module 256KB Backside (Pipeline Burst Cache)

Gelek panelên sereke, CPU pentium zû piştgirî kir, bi gelemperî çîpên bîranîna cache-ya hevdemkirinê wekî cache CPU L2 hebûn. Ev modula cache hevdemkirinê(Derav; Cache On A Stick) Modula bîranîna derveyî ye ku wekî cache CPU L2 zêde tê bikar anîn. Dema ku pêvajo li benda rêwerz an daneyan e ew performansa pêvajoyê zêde dike. L2 cache is used for operating closer to the theoretical limit of the microprocessor.

'Lêxistina boriyan’ pêşniyar dike ku veguheztinên piştî veguheztina yekem berî ku veguheztina yekem bigihîje pêvajoyê çêdibe. 'Pipleline cache teqiya’ was developed as an alternative to asynchronous cache and synchronous burst cache.

  • Navê hilberê : UMC Sync Cache Module 256KB (Awa : 1.8)
  • Hejmara Part : LM 2MV 94V-0
  • Çêker : UMC
  • Welatê çêkirinê : Taiwan
  • Sal / Hefteya Avakirinê : 1996/39
  • Kapasîteya daneyê : 256KB
  • Hejmara pin : 80pin
  • Features : Derav(Cache On A Stick), Pipeline Burst Cache, L2 Cache zêde, SRAM
  • Woltî : 3.3V
  • Pêkhatina Chip : [UM61(L)3232AF-7 9641S MM4X52] ✕ 2 + [UM61(m)256s-15 9549D RB1121] ✕ 1

 

Sync Cache Module Slot (Pipeline_Burst_Cache Moduel Slot)

UMC Sync cache module installed on Soyo mainboard slot

]]> https://www.devicelog.com/memory/sram/umc-sync-cache-module-256kb-pipeline-burst-cache/feed/ 2 Goldstar 1MB DRAM 30pin SIMM (GM71C4400B + GMC71C1000B) https://www.devicelog.com/ku/memory/dram/original-dram/goldstar-30pin-1mb-dram-simm-gm71c4400b-gmc71c1000b/ https://www.devicelog.com/ku/memory/dram/original-dram/goldstar-30pin-1mb-dram-simm-gm71c4400b-gmc71c1000b/#respond Tue, 02 Aug 2011 09:45:54 +0000 https://www.devicelog.com/?p=46-ku Ev SIMM bi rengê zêrîn hatî pêçandî. Rengê lêdanê û forma panelê ya vê SIMM-ê ji hev cûda ye SIMM bi GM71C4400A.

GM71C4400B 1M × 4bit e. Û GM71C1000B 1M × 4bit e. The memory capacity and the function of this SIMM is not different from the SIMM with GM71C4400A and GM71C1000.

Goldstar 30pin 1MB DRAM SIMM (GM71C4400B + GMC71C1000B) (frontside)

Goldstar 30핀 1MB DRAM SIMM (GM71C4400B + GMC71C1000B) (backside)

  • Pargîdaniya çêkirinê : Goldstar Electon
  • Sala çêkirinê : 1994
  • Welatê çêkirinê : Koreya Başûr
  • Taybetmendiyên Modulê : 30derzî, Simm, Parity Ram
  • Kapasîteya bîranînê : 1MB
  • Bandwidth : 8gem
  • Taybetmendiya bilez : 70Ns(Trac)
  • Pêkhatina Chip : GM71C4400B × 2 + GM71C1000B

Goldstar 30pin 1MB DRAM SIMM (GM71C4400B + GMC71C1000B)

]]> https://www.devicelog.com/memory/dram/original-dram/goldstar-30pin-1mb-dram-simm-gm71c4400b-gmc71c1000b/feed/ 0 Goldstar 1MB DRAM 30pin SIMM (GM71C4400A + GMC71C1000) https://www.devicelog.com/ku/memory/dram/original-dram/goldstar-30pin-1mb-dram-simm-gm71c4400a-gmc71c1000/ https://www.devicelog.com/ku/memory/dram/original-dram/goldstar-30pin-1mb-dram-simm-gm71c4400a-gmc71c1000/#comments Tue, 02 Aug 2011 05:39:00 +0000 https://www.devicelog.com/?p=23-ku Goldstar Trademark of Goldstar Electron Co., LTD. Ew navê xwe li LG Semiconductor guherand (LG Semicon) ba 1995, û ew li pîşesaziya elektronîkên Hyundai hate cîbicîkirin (Hynix ji niha) at 1999.

Goldstar 30pin 1MB DRAM SIMM (GM71C4400A+GMC71C1000) (frontside)Goldstar 30pin 1MB DRAM SIMM (GM71C4400A+GMC71C1000) (backside)

  • Pargîdaniya çêkirinê : Goldstar Electron
  • Sala çêkirî: 1993
  • Welatê çêkirinê : Koreya Başûr
  • Taybetmendiyên Modulê : 30derzî, DRAM, Simm, Parity Ram
  • Kapasîteya bîranînê : 1MB
  • Bandwidth : 8gem
  • Taybetmendiya bilez : 70Ns(Trac)
  • Pêkhatina Chip : GM71C4400A × 2 + GM71C1000
]]> https://www.devicelog.com/memory/dram/original-dram/goldstar-30pin-1mb-dram-simm-gm71c4400a-gmc71c1000/feed/ 2 Hyundai 1MB DRAM 30pin SIMM https://www.devicelog.com/ku/memory/dram/original-dram/hyundai-30pin-1mb-dram-simm/ https://www.devicelog.com/ku/memory/dram/original-dram/hyundai-30pin-1mb-dram-simm/#comments Mon, 01 Aug 2011 16:12:29 +0000 https://www.devicelog.com/?p=5-ku Ev RAM 30-pin 1MB SIMM e ku ji hêla pîşesaziya Hyundai Electronics ve hatî hilberandin(Hynix ji niha). 30-pin SIMMs gerdûnî ji hatin bikaranîn 80286 ber 80486. Ger hejmara çîpên jimareya cêwî be, one of the chips perform parity check.

Ev RAM ji du HY514400A pêk tê(1M x 4bit) û yek HY531000A(1M x 1 bit). Kapasîteya bîra RAMê 1MB e. HY531000A çîpê daneyê ye, and HY531000A is parity chip.

Hyundai 30-pin 1MB SIMM (HY514400A × 2 + HT531000A)

  • Çêker : Hyundai Electronics Industries Co., Ltd.
  • Sala çêkirinê : 1993
  • Taybetmendiyên Hilberê : 30-derzî, DRAM SIMM, Parity Ram
  • Kapasîteya bîranînê : 1MB
  • Bandwidth : 8gem
  • Taybetmendiya bilez : 70Ns(Trac)
  • Pêkhatina Chip : HY514400A × 2 + HY531000A (4×2 + 1 bît)
]]> https://www.devicelog.com/memory/dram/original-dram/hyundai-30pin-1mb-dram-simm/feed/ 1