2.6V – DeviceLog.com https://www.devicelog.com/ku/ device, part, spec Sat, 04 Jun 2016 15:05:16 +0000 ku hourly 1 https://wordpress.org/?v=6.6.2 Samsung 512MB PC3200 DDR SDRAM DIMM (CL3, RAM ne-rast) https://www.devicelog.com/ku/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/ https://www.devicelog.com/ku/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/#comments Wed, 13 Mar 2013 08:31:50 +0000 https://www.devicelog.com/?p=717-ku Samsung DDR 512MB PC3200U-30331-B2 CL3 (non-genuine RAM)

Samsung DDR 512MB PC3200U-30331-B2 CL3 underside (non-genuine RAM)

  • Navê hilberê : Samsung DDR SDRAM 512 MB PC3200 (parçeyên ne-rastîn)
  • Hejmara beşê : PC3200U-30331-B2 M368L6423ETM-CCC
  • Çêker : Samsung Electronics (SEC)
  • Welatê çêkirinê : Koreya Başûr
  • Sal / hefte ava bikin : 2003/33
  • Kapasîteya daneyê : 512MB
  • Leza saetê : 400Mhz (PC3200)
  • Features : 184derzî, Unbuffered Non-ECC DDR SDRAM DIMM
  • Pêkhatina çîpê daneyê : [SEC K4H560838E-TCCC] ✕ 8 chips
  • Bankên daneyan : 4 bankên
  • Navbera nûvekirinê : 7.8μs (8K/64ms nûvekirin)
  • Latancy bixwînin : 3 seet (CL3)
  • Dirêjahiya teqînê : 2, 4, 8
  • Tîpa teqînê : rêzdar & navbeynkar
  • Çîroka nûvekirina teqîna herî zêde : 8
  • VDD, VDDQ : 2.6V ± 0.1V
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