Non-ECC – Piranti Login.com https://www.devicelog.com/jw/ device, part, spek Tue, 23 Mar 2021 10:33:05 +0000 jw hourly 1 https://wordpress.org/?v=6.6.2 EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6 https://www.devicelog.com/jw/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/ https://www.devicelog.com/jw/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/#respond Tue, 23 Mar 2021 10:30:05 +0000 https://www.devicelog.com/?p=1311-jw EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6

Jeneng Produk Memori EK 2GB DDR SO-DIMM PC2-5300 CL5
Nomer Bagean EKM256S74BP8-E6
Produsen Memori EK
Negara Pabrik Taiwan
Chip Mbangun Taun / Minggu 2008/27
Tipe Modul Memori DDR2 SO-DIMM 200 jiwit
Kapasitas Data 2GB
Kacepetan Jam 667Mhz (PC2-5300)
Wektu Memori CL=5, tRCD=5, tRP=5
Fitur 200jiwit
Ora diganggu
Non-ECC
Notebook(Laptop) Memori
Bit Data x64
Informasi Chip Data EK20908A8A-3EG
20827
XCG248-UA3G
Paket FBGA (BGA sing apik)
Tegangan VDD 1.8V

 

]]> https://www.devicelog.com/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/feed/ 0 Samsung 16GB DDR4 SDRAM UDIMM 2Rx8 PC4-21300 (PC4-2666V-UB1-11) (M378A2K43CB1-CTD) https://www.devicelog.com/jw/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/ https://www.devicelog.com/jw/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/#comments Wed, 06 Nov 2019 07:38:24 +0000 https://www.devicelog.com/?p=1233-jw SAMSUNG DDR4 SDRAM 16GB PC4-21300 1906

Jeneng Produk Samsung DDR4 SDRAM 16GB 2R × 8 PC4-21300
(PC4-2666V-UB1-11)
Nomer Bagean M378A2K43CB1-CTD
(C-ing)
Produsen Samsung Electronics
Negara Pabrik China
Mbangun Taun / Minggu 2019 / 06
Jinis DIMM UDIMM
Kapasitas Data 16GB
Tingkat Data
(Bandwidth Max)		 2666.67 MT / s
(21333.33 MB / s)
Wektu Memori
(CL – tRCD – tRP – sawise – tRC)		 19-19-19-43-61
Fitur 288jiwit, Unbuffer Non-ECC DDR4 SDRAM DIMM
Bit Data x64
Bank Modul Internal 16 Bank (4 Grup Bank)
Pangkat 2 (Pangkat Dual)
Komposisi Komponen (1G × 8) × 16
(K4A8G085WC-BCTD) × 16
Paket 78FBGA kanthi Bebas timbal & Bebas Halogen
(RoHS manut)
Dhuwur 31.25 mm
Tegangan VDD 1.2 V ± 0.06 V
Range suhu Operating Case Periode Refresh Rata-rata 7,8 luwih murah banjur TKASUS 85℃,
3.9kita jam 85 < TKASUS 95 ℃

 

]]> https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/feed/ 1 Samsung 8GB DDR4 SDRAM UDIMM 1Rx8 PC4-21300 (PC4-2666V-UA2-11) (M378A1K43CB2-CTD) https://www.devicelog.com/jw/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/ https://www.devicelog.com/jw/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/#respond Tue, 05 Nov 2019 11:07:57 +0000 https://www.devicelog.com/?p=1215-jw SAMSUNG DDR4 SDRAM 8GB DIMM (1Rx8_PC4-21300, PC4-2666V-UA2-11, 1828)

Jeneng Produk Samsung DDR4 SDRAM 8GB 1R×8 PC4-21300
(PC4-2666V-UA2-11)
Nomer Bagean M378A1K43CB2-CTD
(C-ing)
Produsen Samsung Electronics
Negara Pabrik China
Mbangun Taun / Minggu 2018 / 28
Jinis DIMM UDIMM
Kapasitas Data 8GB
Tingkat Data
(Bandwidth Max)		 2666.67 MT / s
(21333.33 MB / s)
Wektu Memori
(CL – tRCD – tRP – sawise – tRC)		 19-19-19-43-61
Fitur 288jiwit, Unbuffer Non-ECC DDR4 SDRAM DIMM
Bit Data x64
Bank Modul Internal 16 Bank (4 Grup Bank)
Pangkat 1 (Pangkat Tunggal)
Komposisi Komponen (1G × 8) × 8
(K4A8G085WC-BCTD) × 8
Paket 78FBGA kanthi Bebas timbal & Bebas Halogen
(RoHS manut)
Dhuwur 30mm
Tegangan VDD 1.2V ± 0.06V
Range suhu Operating Case Periode Refresh Rata-rata 7,8 luwih murah banjur TKASUS 85℃,
3.9kita jam 85 < TKASUS 95 ℃

 

]]> https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/feed/ 0 Samsung 512MB PC3200 DDR SDRAM DIMM (CL3, RAM sing ora asli) https://www.devicelog.com/jw/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/ https://www.devicelog.com/jw/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/#comments Wed, 13 Mar 2013 08:31:50 +0000 https://www.devicelog.com/?p=717-jw Samsung DDR 512MB PC3200U-30331-B2 CL3 (non-genuine RAM)

Samsung DDR 512MB PC3200U-30331-B2 CL3 underside (non-genuine RAM)

  • Jeneng produk : Samsung DDR SDRAM 512MB PC3200 (bagean non-asli)
  • Nomer bagean : PC3200U-30331-B2 M368L6423ETM-CCC
  • Produsen : Samsung Electronics (SEK)
  • Negara pabrik : Korea Kidul
  • Mbangun taun / minggu : 2003/33
  • Kapasitas Data : 512MB
  • Kacepetan jam : 400Mhz (Pc3200)
  • Fitur : 184jiwit, Unbuffered Non-ECC DDR SDRAM DIMM
  • Komposisi chip data : [Sec k4h560838e-tccc] ✕ 8 kripik
  • Bank data : 4 bank-bank
  • Refresh interval : 7.8μs (8K/64ms refresh)
  • Maca latancy : 3 jam (CL3)
  • Dawane bledosan : 2, 4, 8
  • Tipe burst : urut-urutan & interleave
  • Siklus refresh burst maksimum : 8
  • VDD, VDDQ : 2.6V±0.1V
]]> https://www.devicelog.com/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/feed/ 3 Samsung 4GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (2Rx8, Korea) https://www.devicelog.com/jw/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/ https://www.devicelog.com/jw/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/#respond Thu, 10 Jan 2013 02:20:09 +0000 https://www.devicelog.com/?p=602-jw Samsung DDR3 SDRAM 4GB Memory DIMM (2Rx8 PC3-10600U-09-11-B1 M378B5273DH0-CH9 1131)

Jeneng produk Samsung 4GB DDR3 SDRAM PC3-10600 Memori
(2Rx8, PC3-10600U-09-10-A0, M378B5273DH0-CH9, M378B5273DH1)
Produsen Samsung Electronics (SEK)
Negara pabrik Korea Kidul
Mbangun taun / minggu 2011/31
Kapasitas Data 4GB
Kacepetan jam 1333Mhz (PC3-10600)
Wektu Memori CL = 9, tRCD = 9, tRP = 9
Fitur 240jiwit, Unbuffer Non-ECC DDR3 SDRAM DIMM
Bit data x64
ambane / Organisasi bit 512M / x8
Bank Modul Internal 8
Pangkat 2
Komposisi chip data [SEC HCH9 K4B2G0846D] ✕ 16 kripik
(256Mbit ✕ 8 ✕ 16 pcs)
Revisi komponen 4generasi th
Paket FBGA (Bebas timbal & Bebas halogen)
Dhuwur 30mm
Tegangan VDD 1.5V
Range suhu Operating Case 0° C ~ 85 ° C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/feed/ 0 Samsung 2GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (1Rx8, China) https://www.devicelog.com/jw/memory/dram/ddr3-sdram/samsung-ddr3-sdram-2gb-pc3-10600-1333mhz-1rx8-china/ https://www.devicelog.com/jw/memory/dram/ddr3-sdram/samsung-ddr3-sdram-2gb-pc3-10600-1333mhz-1rx8-china/#comments Wed, 09 Jan 2013 14:20:55 +0000 https://www.devicelog.com/?p=557-jw Samsung DDR3 SDRAM 2GB 1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9

Jeneng produk SAMSUNG DDR3 SDRAM PC3-10600 2GB Memori
(1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9 M378B5263DH1)
Produsen Samsung Electronics
Negara pabrik China
Mbangun taun / minggu 2010/38
Kapasitas Data 2GB
Kacepetan jam 1333Mhz (PC3-10600)
Fitur 240jiwit, Unbuffer Non-ECC DDR3 SDRAM DIMM
Teknologi proses produksi 40nm
Bit data x64
Bank Modul Internal 8
Komposisi chip data [SEC HCH9 K4B2G0846C] ✕ 8 kripik
ambane / Organisasi bit 256M / x8
Revisi komponen 4generasi th
Paket FBGA (Bebas timbal & Bebas halogen)
Dhuwur 30mm
Tegangan VDD 1.5V
Range suhu Operating Case 0° C ~ 85 ° C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-ddr3-sdram-2gb-pc3-10600-1333mhz-1rx8-china/feed/ 6