4GB – Piranti Login.com https://www.devicelog.com/jw/ device, part, spek Sat, 04 Jun 2016 15:07:22 +0000 jw hourly 1 https://wordpress.org/?v=6.6.2 Samsung 4GB PC3-10600 DDR3 SDRAM SO-DIMM https://www.devicelog.com/jw/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/ https://www.devicelog.com/jw/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/#comments Mon, 02 Mar 2015 13:25:48 +0000 https://www.devicelog.com/?p=791-jw Samsung Electronics ngeculake modul DDR3 SDRAM nggunakake teknologi proses 30nm ing wulan Juli 2010. This RAM module was made by the 40nm process technology.

Samsung SODIMM DDR3 PC3-10600 4GB frontside Samsung SODIMM DDR3 PC3-10600 4GB rearside

Jeneng produk Samsung DDR3 SDRAM PC3-10600 4GB SO-DIMM
(2Rx8, PC3-10600S-09-10-F2, M471B5273CH0-CH9)
Produsen Samsung Electronics (SEK)
Negara pabrik China
Mbangun taun / minggu 2011/13
Kapasitas Data 4GB
Kacepetan jam 1333Mhz (PC3-10600)
Wektu Memori CL = 9, tRCD = 9, tRP = 9
Fitur 204jiwit, SODIMM, Unbuffer Non-ECC DDR3 SDRAM
Teknologi proses produksi 40nm
Bit data x64
Bank Modul Internal 8
Pangkat 2
Komposisi chip data 256M x 8 * 16 pcs
Revisi komponen 2Gb, C-ing
Paket 78 bal FBGA
Dhuwur 30mm
Tegangan VDD 1.5V
Range suhu Operating Case 0° C ~ 85 ° C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/feed/ 3 Samsung 4GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (2Rx8, Korea) https://www.devicelog.com/jw/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/ https://www.devicelog.com/jw/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/#respond Thu, 10 Jan 2013 02:20:09 +0000 https://www.devicelog.com/?p=602-jw Samsung DDR3 SDRAM 4GB Memory DIMM (2Rx8 PC3-10600U-09-11-B1 M378B5273DH0-CH9 1131)

Jeneng produk Samsung 4GB DDR3 SDRAM PC3-10600 Memori
(2Rx8, PC3-10600U-09-10-A0, M378B5273DH0-CH9, M378B5273DH1)
Produsen Samsung Electronics (SEK)
Negara pabrik Korea Kidul
Mbangun taun / minggu 2011/31
Kapasitas Data 4GB
Kacepetan jam 1333Mhz (PC3-10600)
Wektu Memori CL = 9, tRCD = 9, tRP = 9
Fitur 240jiwit, Unbuffer Non-ECC DDR3 SDRAM DIMM
Bit data x64
ambane / Organisasi bit 512M / x8
Bank Modul Internal 8
Pangkat 2
Komposisi chip data [SEC HCH9 K4B2G0846D] ✕ 16 kripik
(256Mbit ✕ 8 ✕ 16 pcs)
Revisi komponen 4generasi th
Paket FBGA (Bebas timbal & Bebas halogen)
Dhuwur 30mm
Tegangan VDD 1.5V
Range suhu Operating Case 0° C ~ 85 ° C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/feed/ 0