PC3200 – DeviceLog.com https://www.devicelog.com/ht/ device, part, spesifikasyon Sat, 04 Jun 2016 15:05:16 +0000 ht hourly 1 https://wordpress.org/?v=6.6.2 Samsung 512MB PC3200 DDR SDRAM DIMM (CL3, ki pa otantik RAM) https://www.devicelog.com/ht/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/ https://www.devicelog.com/ht/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/#comments Wed, 13 Mar 2013 08:31:50 +0000 https://www.devicelog.com/?p=717-ht Samsung DDR 512MB PC3200U-30331-B2 CL3 (non-genuine RAM)

Samsung DDR 512MB PC3200U-30331-B2 CL3 underside (non-genuine RAM)

  • Non pwodwi : Samsung DDR SDRAM 512MB PC3200 (pati ki pa otantik)
  • Nimewo pati : PC3200U-30331-B2 M368L6423ETM-CCC
  • Manifakti : Samsung Elektwonik (SEC)
  • Peyi fabrikasyon : Koredisid
  • Konstwi ane/semèn : 2003/33
  • Kapasite Done : 512MB
  • Vitès revèy : 400Mhz (PC3200)
  • Karakteristik : 184peny, Unbuffered Non-ECC DDR SDRAM DIMM
  • Done chip konpozisyon : [SEC K4H560838E-TCCC] ✕ 8 chips
  • Bank done : 4 bank yo
  • Rafrechi entèval : 7.8μs (8K/64ms rafrechi)
  • Li latansi : 3 revèy (CL3)
  • Longè pete : 2, 4, 8
  • Kalite pete : sekans & interleave
  • Maksimòm sik rafrechi pete : 8
  • VDD, VDDQ : 2.6V±0.1V
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