Kore di – DeviceLog.com https://www.devicelog.com/ht/ device, part, spesifikasyon Thu, 01 Dec 2022 23:32:55 +0000 ht hourly 1 https://wordpress.org/?v=6.6.2 Samsung 16MB SDRAM DIMM PC66 (KMM366S203CTL-G0) https://www.devicelog.com/ht/memory/dram/sdram/samsung-16mb-sdram-dimm-pc66-kmm366s203ctl-g0/ https://www.devicelog.com/ht/memory/dram/sdram/samsung-16mb-sdram-dimm-pc66-kmm366s203ctl-g0/#respond Wed, 20 Jul 2022 09:33:56 +0000 https://www.devicelog.com/?p=1358-ht Samsung 16MB SDRAM PC66 DIMM (KMM366S203CTL-G0)Samsung 16MB SDRAM PC66 DIMM (KMM366S203CTL-G0) backside

  • Non pwodwi : Samsung 16MB SDRAM 16MB PC66
  • Nimewo pati : KMM366S203CTL-G0
  • Manifakti : Samsung Elektwonik Co., Ltd. (SEC)
  • Peyi fabrikasyon : Koredisid
  • Konstwi ane/semèn : 1998/09
  • Kapasite Done : 16MB
  • Vitès revèy : 66Mhz (PC66)
  • Karakteristik : 168 peny, Unbuffered ki pa ECC SDRAM DIMM
  • Done chip konpozisyon : [KM48S2020CT-G10] × 8 chips
    (2M × 64bit)
  • Enfòmasyon sou yon sèl Chip
    • KM48S2020CT-G10 (UQK218EM oswa UQL004DD)
    • Kalite IC memwa : DRAM synchrone
    • Kapasite : 2M x 8bit
    • Aksè Tan-Max : 7 ns
    • Interleaved Length pete: 1, 2, 4, 8
    • Revèy Frekans-Max (fCLK) : 100 MHz
    • 44 peny
    • Konstwi ane/semèn : 1998/07
  • VDD : 3.3V
  • ETC : 366S203BTL, AD1055-00, SMB2 94V-0
]]> https://www.devicelog.com/memory/dram/sdram/samsung-16mb-sdram-dimm-pc66-kmm366s203ctl-g0/feed/ 0 LG Semicon 16MB EDO-DRAM 72pin SIMM (GM71C17400CJ6) https://www.devicelog.com/ht/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/ https://www.devicelog.com/ht/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/#comments Mon, 11 Jul 2022 15:05:31 +0000 https://www.devicelog.com/?p=1336-ht LGS GM71C17400CJ6 16MB EDO-DRAM SIMM frontsideLGS GM71C17400CJ6 16MB EDO-DRAM SIMM backside

  • Manifakti : LG Semicon Co., Ltd.
  • Peyi fabrikasyon : Koredisid
  • Nimewo Pati : ?
  • Faktè fòm : SIMM
  • Karakteristik : 72peny, EDO DRAM, Non-Parite
  • Kapasite memwa : 16MB
  • Bandwidth : 32ti jan
  • Vitès : 60ns(tRAC)
  • Voltage : 5V
  • Chip Konpozisyon : GM71C17400CJ6 × 8
  • Chip Bati Ane / Semèn : 1998/27
  • Yon Kapasite Chip : 4M x 4bit
  • elatriye : Addonics®, SD816
]]> https://www.devicelog.com/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/feed/ 1 Macronix MX86200 (SiS 6202) https://www.devicelog.com/ht/output/vga/pci/macronix-mx86200-sis-6202/ https://www.devicelog.com/ht/output/vga/pci/macronix-mx86200-sis-6202/#respond Fri, 19 Mar 2021 15:13:35 +0000 https://www.devicelog.com/?p=1299-ht Macronix MX86200 - SiS 6202

 

Kalite Videyo Graphics Adaptè (VGA)
Non pwodwi MX86200
Chipset Manifakti SiS
Chipset/GPU Modèl SiS 6202
Chipset Bati Ane / Semèn 1997 / 13
Distribitè Macronix
Peyi fabrikasyon Taiwan
Videyo RAM manifakti Samsung Elektwonik Co., Ltd.
Konpozisyon RAM videyo (KM416V256BLJ-7) × 2
Disponib
Konpozisyon RAM videyo		 1,2, oswa 4 MBytes montre memwa
Entèfas plas PCI
Rezolisyon sipoze 1600×1200, 64K koulè @ 60 Hz
1280×1024, 64K koulè @ 75 Hz
1024×768, 16M koulè @ 60 Hz
Karakteristik GPU Chip • Achitekti pèfòmans segondè
• True 64-bit graphics engine.
• Se vre 8/16/32 bpp acceleration.
• BitBLT, rektang, ranpli modèl, trase liy, ekspansyon koulè ak konplè 256 ROP
• Sou-chip modèl memwa
• Plizyè FIFO avanse
• I/O ki gen kat memwa
• 64x64x2 bit-map kisè pyès ki nan konpitè Lektur videyo bon jan kalite
• Sipòte prensipal chofè DCI sifas pou lektur videyo lis ak bon jan kalite
• Sipòte Microsoft Videyo pou Windows• Kontwòl memwa avanse
• Vrè aksè memwa ekspozisyon 64-bit
• 256K x 4, 256K x 8, ak 256K x 16 doub CAS oswa dualWE DRAM
• Vit-paj ak Hyper-paj EDO
• Deteksyon oto memwa gwosè
• Mòd adrès lineyè jiska 4 Mbyte

• Glueless koòdone otobis PCI
• PCI konplè 2.1 konfòmite
• Integrated RA MDAC
• Entegre pwogramasyon 135 MHz revèy sentèz
• Low-Power sub-micron CMOS
• 208 PIN PQFP

• Plug and Play konfòme
• VESA Display Data Channel (DDC2B) sipò pwotokòl
• VESA estanda Feature Connector sipò
• DPMS ak sipò avanse jesyon pouvwa
Videyo Connector D-Sub
(15-PIN VGA konektè)

 

]]> https://www.devicelog.com/output/vga/pci/macronix-mx86200-sis-6202/feed/ 0 Samsung Galaxy S (SHW-M110S) https://www.devicelog.com/ht/mobile/smart-phone/samsaung-galaxy-s-shw-m110s/ https://www.devicelog.com/ht/mobile/smart-phone/samsaung-galaxy-s-shw-m110s/#comments Sun, 19 Jul 2015 09:24:59 +0000 https://www.devicelog.com/?p=995-ht Aparèy sa a se 1ye jenerasyon smartphone seri Galaksi S la. Galaksi S la (SHW-M110S) se yon telefòn eksklizif pou abonnés SK Telecom. Li diferan de GT-I9000 nan ke li gen ladann yon sentonizè T-DMB. Li vann anba a “Nenpòt apèl” branding.

Samsung Galaxy S (SHW-M110S) Picture Samsung Galaxy S (SHW-M110S) Picture Samsung Galaxy S (SHW-M110S) Picture Samsung Galaxy S (SHW-M110S) Picture
Pwodwi Modèl Samsung Galaksi S SHW-M110S
Manifakti Samsung Elektwonik
Peyi fabrikasyon Koredisid
Dat lage 2010/06
Ajans vann SK telecom Co., Ltd.
Kò Gwosè 122.4mm × 64.2mm × 9.9mm
Pwa 121g
Koulè Nwa, Blan nèj
Batri Kalite batri Lityòm-ion, Detachable
Kapasite batri 1500mAh (3.7v)
Platfòm Sistèm operasyon Android 2.1 ~ 2.3.6
CPU 1 GHz sèl-nwayo (ARM Cortex A8)
GPU 200 MHz PowerVR SGX 540
memwa Sistèm RAM 512 MB
Stoage Entèn 16 GB NAND flash (14 GB itilizatè disponib)
Depo ekstèn mikwo-SD / mikwo-SDHC (jiska 32 GB sipòte)
Kamera Kamera prensipal 5 Mega Pixels ( 2592 × 1944 piksèl)
Flash Ki ap dirije Flash
Capteur 1/3.6″ pous
Ouverture F F/2.6
Kamera devan VGA kamera (0.3Mega Pixels, F2.8)
Ekspozisyon Kalite Panel Display Super AMOLED ak RBGB-Matrix (Pentire)
Gwosè ekspozisyon 100 mm (4.0 pous)
(~ 58.0% rapò ekran-a-kò)
Rezolisyon 800× 480 piksèl WVGA
Dansite piksèl 233 ppi
Koulè 16 milyon
Grate ki reziste vè Goril Glass
Rezo Sim mini-SIM
2G Rezo 850, 900, 1800, 1900Mhz GSM/GPRS/EDGE
3G Rezo 900, 2100Mhz UTMS/HSPA
Rezo Done GSM, GPRS, BORD, UMTS, HSDPA, HSUPA, HSPA
Rezo san fil WIFI dirèk, cho-spot, DLNA, Bluetooth
Entèfas USB USB 2.0 Mikwo-B (Mikwo-USB)
WiFi 802.11 b/g/n
Pwodiksyon odyo 3.5mm Jack
Bluetooth 3.0 vèsyon, A2DP
Radyo Stereo FM radyo ak RDS
GPS A-GPS
DMB T-DMB televizyon (sèlman Kore)
]]> https://www.devicelog.com/mobile/smart-phone/samsaung-galaxy-s-shw-m110s/feed/ 2 Samsung Galaksi S4 LTE-A (SHV-E330S) https://www.devicelog.com/ht/mobile/smart-phone/samsung-galaxy-s4-lte-a-shv-e330s/ https://www.devicelog.com/ht/mobile/smart-phone/samsung-galaxy-s4-lte-a-shv-e330s/#respond Sun, 07 Jun 2015 15:05:06 +0000 https://www.devicelog.com/?p=905-ht Samsung Galaxy S4 SHV-E330S pou SK Telecom te lage nan mwa avril 2013. Li disponib nan de koulè, Blue Arctic ak Wouj Aurora konplo koulè. SK Telecom(SKT) said that LTE Advanced S4 is capable of reaching network speed for up to 150Mbps in their infrastructure.

Galaxy S4 LTE-A ① Galaxy S4 LTE-A ② Galaxy S4 LTE-A ③ Galaxy S4 LTE-A ④
Pwodwi Modèl Galaksi S4 LTE-A (SHV-330S)
(Samsung Galaxy S4 4G LTE-A pou Kore di)
(Galaksi S4 GT-i9506)
Manifakti Samsung Elektwonik
Peyi fabrikasyon Koredisid
Dat fabrikasyon 2013/07/30
Ajans vann SK telecom Co., Ltd.
Kò Gwosè 69.8mm × 136.6mm × 7.9mm
Pwa 131g
Koulè Blue Aktik
Batri Kalite batri Lityòm-ion, Detachable
Kapasite batri 2,600mAh
Platfòm Sistèm operasyon Android 4.2.2 (Jele Bean)
Android 4.4.2 (Kit Kat)
Android 5.0 (Lollipop)
CPU Quad-core 32bit 2.3Ghz Krait 400
GPU Qualcomm Adreno 330
memwa Sistèm RAM 2GB LPDDR3
Stoage Entèn 32GB
Depo ekstèn Mikwo-SD / mikwo-SDHC / mikwo-SDXC(64GB max.)
Kamera Kamera prensipal 13 Mega Pixels (4128 x 3096 piksèl)
Flash Ki ap dirije Flash
Capteur 1/3.06″ pous
Ouverture F F/2.2
Kamera devan 2,1 Mega Pixels (1920 × 1080 piksèl)
Ekspozisyon Kalite Panel Display HD S-AMOLED
Gwosè ekspozisyon 12.7 cm (5.0 pous)
Rezolisyon 1080 × 1920 piksèl
Dansite piksèl 441 ppi
Koulè 16 milyon
Grate ki reziste vè Gorilla Glass 3
Rezo Sim mikwo SIM (3FF)
2G Rezo GSM 900/1800/1900
3G Rezo UMTS 1900/2100
4G Rezo LTE 850/1800
Rezo Done GPRS, BORD, UMTS, HSDPA, HSUPA, HSPA+, LTE, LTE-A
Rezo san fil WIFI dirèk, NFC, MHL, cho-spot, DLNA, Bluetooth
Vitès maksimòm Desann: 150Mbps, Leve: 50Mbps
Entèfas USB USB 2.0 Mikwo-B (Mikwo-USB)
pwodiksyon televizyon USB 2.0 Mikwo-B (Mikwo-USB)
Pwodiksyon odyo 3.5mm Jack
Bluetooth 4.0 vèsyon ak A2DP
WiFi 802.11 a/b/g/n/ac
GPS A-GPS, GeoTagging ak GLONASS
DMB T-DMB televizyon (sèlman Kore)
]]> https://www.devicelog.com/mobile/smart-phone/samsung-galaxy-s4-lte-a-shv-e330s/feed/ 0 Samsung Spinpoint F2EG HD154UI 1.5TB https://www.devicelog.com/ht/storage/hdd/samsung-spinpoint-f2eg-hd154ui-1-5tb/ https://www.devicelog.com/ht/storage/hdd/samsung-spinpoint-f2eg-hd154ui-1-5tb/#respond Wed, 04 Mar 2015 11:48:00 +0000 https://www.devicelog.com/?p=830-ht Samsung Electronis sold its hard disk drive business to Seagate Technology for approximately US$1.4 billion in April 2011.

HDD sa a ka chanje nan mòd SATA-1 oswa SATA-2 pa ESTool, the utility for Samsung hard disk drives.

Samsung HD154UI 1.5GB

Non pwodwi Samsung Spinpont F2EG HD154UI 1.5TB
Manifakti Samsung Elektwonik
Peyi fabrikasyon Kore di
Konstwi ane/mwa 2009/10
Entèfas SATA 2 (3Gbit/s)
Kapasite Disk 1.5TB (1500GB)
Kapasite tanpon 32MB
Byte pou chak Sektè 512Bytes
Vitès wotasyon 5400RPM
Faktè fòm 3.5pous
Gwosè
(lajè × longè × wotè)		 101.5 × 147.0 × 26.1mm
Pwa 650g
Kantite Disk 3
Kantite tèt 6
Voltage 5V(±5%), 12V(± 10%)
Spin Up Kouran (Max) 2.0Youn
Ranje Tanperati Opere : 0°C ~ 60 °C
Ki pa opere : -40°C ~ 70 °C
Chòk lineyè
(1/2 sinis batman kè)		 Opere : 70G
Ki pa opere : 300G
Altitid
(parapò ak nivo lanmè)		 Opere : -300 pou 3,000 m
Ki pa opere : -300 pou 12,000 m
Konsomasyon pouvwa San fè anyen konsa : 5.1W
Chèche : 5.7W
Li/Ekri : 6.3W
Standby : 1W
Dòmi : 1W
Bri San fè anyen konsa 25dB / Chèche 28dB
Erè Lekti ki pa ka refè
1 sektè nan 10¹⁵bit
Kòmanse/Stop Sik 50,000

Samsung HD154UI 1.5GBSamsung HD154UI 1.5GBSamsung HD154UI 1.5GB Samsung HD154UI 1.5GBSamsung HD154UI 1.5GB

]]> https://www.devicelog.com/storage/hdd/samsung-spinpoint-f2eg-hd154ui-1-5tb/feed/ 0 Samsung 512MB PC2700 DDR SDRAM DIMM (M368L6423DTM) https://www.devicelog.com/ht/memory/dram/ddr-sdram/samsung-ddr-sdram-pc2700-512mb-dimm-m368l6423dtm/ https://www.devicelog.com/ht/memory/dram/ddr-sdram/samsung-ddr-sdram-pc2700-512mb-dimm-m368l6423dtm/#respond Tue, 03 Mar 2015 08:45:43 +0000 https://www.devicelog.com/?p=814-ht M368L6423DTM a se 32M bit x 64 Double Pousantaj Done(DDR) Modil memwa SDRAM segondè dansite ki baze sou senkyèm jenerasyon 256Mb DDR SDRAM respektivman. M368L6423DTM a konsiste de sèz CMOS 32M x 8 ti jan ak 4banks Double Done To SDRAMs nan 66pin TSOP-II(400mil) pakè yo monte sou yon substra vè-epoxy 184pin. Kat kondansateur dekouplage 0.1uF yo monte sou tablo sikwi enprime an paralèl pou chak DDR SDRAM.. The M368L6423DTM Dual In-line Memory Module and is intended for mounting into 184pin edge connector sockets.

Samsung DDR SDRAM 256MB PC2700 DIMM (M368L6423DTM) Samsung DDR SDRAM 256MB PC2700 DIMM (M368L6423DTM)

Non pwodwi Samsung DDR SDRAM PC2700 512MB DIMM
(PC2700U-25331B2, M368L6423DTM)
Manifakti Samsung Elektwonik
Peyi fabrikasyon Kore di
Konstwi ane/semèn 2003/12
Kapasite Done 512MB
Vitès revèy 166Mhz (PC2700, DDR333)
Distribisyon memwa CL=2.5
Karakteristik 184peny, DIMM, Ki pa ECC DDR SDRAM unbuffer
Gwosè 133.35mm × 31.75mm
Bits done 64ti jan
Bank Modil Entèn yo 4
Done chip konpozisyon K4H560838D-TCB3 × 16
(32M × 8bit × 16chips)
Pake TSOP-II
VDD vòltaj 2.5± 0.2V
Ranje tanperati ka opere 0°C ~ 85 °C
]]> https://www.devicelog.com/memory/dram/ddr-sdram/samsung-ddr-sdram-pc2700-512mb-dimm-m368l6423dtm/feed/ 0 Samsung 4GB PC3-10600 DDR3 SDRAM SO-DIMM https://www.devicelog.com/ht/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/ https://www.devicelog.com/ht/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/#comments Mon, 02 Mar 2015 13:25:48 +0000 https://www.devicelog.com/?p=791-ht Samsung Electronics te pibliye modil DDR3 SDRAM lè l sèvi avèk teknoloji pwosesis 30nm an Jiyè 2010. This RAM module was made by the 40nm process technology.

Samsung SODIMM DDR3 PC3-10600 4GB frontside Samsung SODIMM DDR3 PC3-10600 4GB rearside

Non pwodwi Samsung ddr3 sdram pc3-10600 4GB SO-DIMM
(2Rx8, PC3-10600S-09-10-F2, M471B5273CH0-CH9)
Manifakti Samsung Elektwonik (SEC)
Peyi fabrikasyon Lachin
Konstwi ane/semèn 2011/13
Kapasite Done 4GB
Vitès revèy 1333Mhz (PC3-10600)
Distribisyon memwa Cl = 9, trcd = 9, trp = 9
Karakteristik 204peny, Sodimm, Unbuffer ki pa ECC DDR3 SDRAM
Teknoloji Pwosesis Pwodiksyon 40nm
Bits done x64
Bank Modil Entèn yo 8
Ranje 2
Done chip konpozisyon 256M x 8 * 16 pcs
Revizyon Component 2GB, C-mouri
Pake 78 Boul fbga
Wotè 30mm
VDD vòltaj 1.5V
Ranje tanperati ka opere 0°C ~ 85 °C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/feed/ 3 Samsung 32MB SDRAM DIMM PC66 (KMM366S403BTN-G0) https://www.devicelog.com/ht/memory/dram/sdram/samsung-sdram-32mb-pc66-kmm366s403btn-g0/ https://www.devicelog.com/ht/memory/dram/sdram/samsung-sdram-32mb-pc66-kmm366s403btn-g0/#comments Thu, 14 Mar 2013 03:50:48 +0000 https://www.devicelog.com/?p=732-ht Samsung SDRAM 32MB PC66 KMM366S403BTN-G0

Samsung SDRAM 32MB PC66 KMM366S403BTN-G0 underside

  • Non pwodwi : Samsung SDRAM 32MB PC66
  • Nimewo pati : KMM366S403BTN-G0
  • Manifakti : Samsung Elektwonik (SEC)
  • Peyi fabrikasyon : Koredisid
  • Konstwi ane/semèn : 1997/33
  • Kapasite Done : 32MB
  • Vitès revèy : 66Mhz (PC66)
  • Karakteristik : 168peny, Unbuffered ki pa ECC SDRAM DIMM
  • Done chip konpozisyon : [KM48S2020BT-G10] ✕ 16 chips
  • VDD : 3.3V
]]> https://www.devicelog.com/memory/dram/sdram/samsung-sdram-32mb-pc66-kmm366s403btn-g0/feed/ 1 Samsung 512MB PC3200 DDR SDRAM DIMM (CL3, ki pa otantik RAM) https://www.devicelog.com/ht/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/ https://www.devicelog.com/ht/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/#comments Wed, 13 Mar 2013 08:31:50 +0000 https://www.devicelog.com/?p=717-ht Samsung DDR 512MB PC3200U-30331-B2 CL3 (non-genuine RAM)

Samsung DDR 512MB PC3200U-30331-B2 CL3 underside (non-genuine RAM)

  • Non pwodwi : Samsung DDR SDRAM 512MB PC3200 (pati ki pa otantik)
  • Nimewo pati : PC3200U-30331-B2 M368L6423ETM-CCC
  • Manifakti : Samsung Elektwonik (SEC)
  • Peyi fabrikasyon : Koredisid
  • Konstwi ane/semèn : 2003/33
  • Kapasite Done : 512MB
  • Vitès revèy : 400Mhz (PC3200)
  • Karakteristik : 184peny, Unbuffered Non-ECC DDR SDRAM DIMM
  • Done chip konpozisyon : [SEC K4H560838E-TCCC] ✕ 8 chips
  • Bank done : 4 bank yo
  • Rafrechi entèval : 7.8μs (8K/64ms rafrechi)
  • Li latansi : 3 revèy (CL3)
  • Longè pete : 2, 4, 8
  • Kalite pete : sekans & interleave
  • Maksimòm sik rafrechi pete : 8
  • VDD, VDDQ : 2.6V±0.1V
]]> https://www.devicelog.com/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/feed/ 3