DDR – DeviceLog.com https://www.devicelog.com/ht/ device, part, spesifikasyon Sun, 01 Jan 2023 09:16:25 +0000 ht hourly 1 https://wordpress.org/?v=6.6.2 HIS Radeon RX560 14CU GREEN iCooler OC GDDR5 2GB https://www.devicelog.com/ht/output/vga/pci-express/his-radeon-rx560-14cu-green-icooler-oc-gddr5-2gb/ https://www.devicelog.com/ht/output/vga/pci-express/his-radeon-rx560-14cu-green-icooler-oc-gddr5-2gb/#respond Sun, 25 Dec 2022 05:15:29 +0000 https://www.devicelog.com/?p=1382-ht HIS RADEON RX560 GREEN iCooler OC GDDR5 2GB

Non pwodwi HIS Radeon RX560 14CU GREEN iCooler OC D5 2GB
Kòd pwodwi HS-560J2SCNR
Kòd EAN 489 51390 12361
Dat realease 2016.8.8.
Chipset Manifakti AMD(Nou te genyen)
Manifakti Komisyon Konsèy Hightech Information System Ltd. (Pa li)
Peyi fabrikasyon Lachin
Manifakti memwa Elpida memwa, Inc.
Chipset/GPU Modèl AMD Radeon RX 560 Seri
AMD Radeon HD 560
Non kòd GPU Baffin (Polaris 11)
Revizyon GPU CF
Teknoloji GPU 14nm
GPU Die Size 123mm²
GPU Subvendor AK AIB
GPU revèy Baz : 1145Mhz
OC : 1196Mhz
Ranfòse : 1176 MHz
Stream Processeurs
(Kalkile Inite yo)		 896 (14CU)
Kalite RAM videyo GDDR5
Videyo RAM Size 2048MB (2GB)
Videyo RAM Clock 1500Mhz
Entèfas otobis PCI Express 3.0 x 8
Lajè otobis la 128ti jan
Vitès otobis 7.0Gbps (112GB/s)
Teknoloji enfòmatik OpenGL, DirectCompute, DirectML, Vulkan
Konsomasyon pouvwa Max. 46W
Rekòmande Power Supply 400W+
Pi fre iCooler ( De plas 0dB , 11 x Fan-lam)
Konektè Videyo DVI × 1
HDMI × 1
DisplayPort(DP) × 1
Rezolisyon maksimòm
(pou chak Display)		 DP 1.4 : 5120 × 2880 @ 60Hz
HDMI 2.0b : 4096 × 2160 @ 60Hz
Doub-Link DVI-D Port : 2560 × 1600 @ 60Hz
Karakteristik • Zewo Fan Fonksyon
• Lajè: 170mm
• Wotè: 35mm

HIS RADEON RX560 14CU GREEN iCooler OC GDDR5 2GB HIS RADEON RX560 14CU GREEN iCooler OC GDDR5 2GB HIS RADEON RX560 14CU GREEN iCooler OC GDDR5 2GB HIS RADEON RX560 14CU GREEN iCooler OC GDDR5 2GB HIS RADEON RX560 14CU GREEN iCooler OC GDDR5 2GB HIS RADEON RX560 14CU GREEN iCooler OC GDDR5 2GB

]]> https://www.devicelog.com/output/vga/pci-express/his-radeon-rx560-14cu-green-icooler-oc-gddr5-2gb/feed/ 0 EK memwa 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6 https://www.devicelog.com/ht/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/ https://www.devicelog.com/ht/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/#respond Tue, 23 Mar 2021 10:30:05 +0000 https://www.devicelog.com/?p=1311-ht EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6

Non pwodwi EK memwa 2GB DDR SO-DIMM PC2-5300 CL5
Nimewo Pati EKM256S74BP8-E6
Manifakti EK memwa
Peyi fabrikasyon Taiwan
Chip Bati Ane / Semèn 2008/27
Kalite Modil memwa DDR2 SO-DIMM 200 peny
Kapasite Done 2GB
Vitès revèy 667Mhz (PC2-5300)
Distribisyon memwa CL=5, tRCD=5, tRP = 5
Karakteristik 200peny
San tampon
Ki pa ECC
Kaye(Laptop) memwa
Done Bits x64
Done Chip enfòmasyon EK20908A8A-3EG
20827
XCG248-UA3G
Pake FBGA (BGA amann)
VDD Voltage 1.8V

 

]]> https://www.devicelog.com/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/feed/ 0 Samsung 16GB DDR4 SDRAM UDIMM 2Rx8 PC4-21300 (PC4-2666V-UB1-11) (M378A2K43CB1-CTD) https://www.devicelog.com/ht/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/ https://www.devicelog.com/ht/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/#comments Wed, 06 Nov 2019 07:38:24 +0000 https://www.devicelog.com/?p=1233-ht SAMSUNG DDR4 SDRAM 16GB PC4-21300 1906

Non pwodwi Samsung ddr4 sdram 16gb 2r × 8 PC4-21300
(PC4-2666V-UB1-11)
Nimewo Pati M378A2K43CB1-CTD
(C-mouri)
Manifakti Samsung Elektwonik
Peyi fabrikasyon Lachin
Konstwi Ane/Semèn 2019 / 06
Kalite DIMM UDIMM
Kapasite Done 16GB
Done Pousantaj
(Maksimòm Bandwidth)		 2666.67 MT/s
(21333.33 MB/s)
Distribisyon memwa
(CL – tRCD – tRP – apre – tRC)		 19-19-19-43-61
Karakteristik 288peny, Ki pa ECC DDR4 SDRAM DIMM unbuffer
Done Bits x64
Bank Modil Entèn 16 Banks (4 Gwoup Bank yo)
Ranje 2 (Doub ran)
Konpozisyon konpozan (1G × 8) × 16
(K4A8G085WC-BCTD) × 16
Pake 78FBGA ak san plon & San alojene
(RoHS konfòme)
Wotè 31.25 mm
VDD Voltage 1.2 V ± 0.06 V
Ranje tanperati ka opere Peryòd Rafrechi Mwayèn 7.8us nan pi ba pase TKA 85℃,
3.9nou nan 85℃ < TKA ≤ 95℃

 

]]> https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/feed/ 1 Samsung 8GB DDR4 SDRAM UDIMM 1Rx8 PC4-21300 (PC4-2666V-UA2-11) (M378A1K43CB2-CTD) https://www.devicelog.com/ht/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/ https://www.devicelog.com/ht/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/#respond Tue, 05 Nov 2019 11:07:57 +0000 https://www.devicelog.com/?p=1215-ht SAMSUNG DDR4 SDRAM 8GB DIMM (1Rx8_PC4-21300, PC4-2666V-UA2-11, 1828)

Non pwodwi Samsung DDR4 SDRAM 8GB 1R×8 PC4-21300
(PC4-2666V-UA2-11)
Nimewo Pati M378A1K43CB2-CTD
(C-mouri)
Manifakti Samsung Elektwonik
Peyi fabrikasyon Lachin
Konstwi Ane/Semèn 2018 / 28
Kalite DIMM UDIMM
Kapasite Done 8GB
Done Pousantaj
(Maksimòm Bandwidth)		 2666.67 MT/s
(21333.33 MB/s)
Distribisyon memwa
(CL – tRCD – tRP – apre – tRC)		 19-19-19-43-61
Karakteristik 288peny, Ki pa ECC DDR4 SDRAM DIMM unbuffer
Done Bits x64
Bank Modil Entèn 16 Banks (4 Gwoup Bank yo)
Ranje 1 (Single Rank)
Konpozisyon konpozan (1G × 8) × 8
(K4A8G085WC-BCTD) × 8
Pake 78FBGA ak san plon & San alojene
(RoHS konfòme)
Wotè 30mm
VDD Voltage 1.2V ± 0.06V
Ranje tanperati ka opere Peryòd Rafrechi Mwayèn 7.8us nan pi ba pase TKA 85℃,
3.9nou nan 85℃ < TKA ≤ 95℃

 

]]> https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/feed/ 0 Samsung 2GB DDR2 SDRAM DIMM 2Rx8 PC2-6400 (M378T5663QZ3-CF7) https://www.devicelog.com/ht/memory/dram/ddr2-sdram/samsung-2gb-ddr2-sdram-dimm-2rx8-pc2-6400-m378t5663qz3-cf7/ https://www.devicelog.com/ht/memory/dram/ddr2-sdram/samsung-2gb-ddr2-sdram-dimm-2rx8-pc2-6400-m378t5663qz3-cf7/#respond Sat, 04 Jun 2016 15:17:04 +0000 https://www.devicelog.com/?p=1116-ht Samsung DDR2 SDRAM 2GB 2Rx8 PC2-6400 (M378T5663QZ3-CF7)Samsung DDR2 SDRAM 2GB 2Rx8 PC2-6400 (M378T5663QZ3-CF7)

Non pwodwi Samsung DDR2 SDRAM 2GB 2R×8 PC2-6400
Nimewo Pati M378T5663QZ3-CF7
Manifakti Samsung Elektwonik
Peyi fabrikasyon Lachin
Konstwi Ane/Semèn 2009/04, 2010/07
Kalite Modil memwa DIMM
Kapasite Done 2GB
Vitès revèy 800Mhz (PC2-6400)
Distribisyon memwa CL=6, tRCD=6, tRP = 6
Karakteristik 240peny, Unbuffered ki pa ECC DDR2 SDRAM DIMM
Done Bits x64
Bank Modil Entèn 8
Ranje 2
Done Chip Konpozisyon
(Pwofondè × Bit òganizasyon × pcs)		 128M × 8 × 16pcs
(K4T1G084QQ × 16pcs)
Pake 60FBGA ak san plon ak alojene
(RoHS konfòme)
Wotè 30mm
VDD Voltage 1.8V±0.1V
Ranje tanperati ka opere 0°C ~ 95 °C

 

]]> https://www.devicelog.com/memory/dram/ddr2-sdram/samsung-2gb-ddr2-sdram-dimm-2rx8-pc2-6400-m378t5663qz3-cf7/feed/ 0 Samsung 512MB PC3200 DDR SDRAM DIMM (CL3, ki pa otantik RAM) https://www.devicelog.com/ht/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/ https://www.devicelog.com/ht/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/#comments Wed, 13 Mar 2013 08:31:50 +0000 https://www.devicelog.com/?p=717-ht Samsung DDR 512MB PC3200U-30331-B2 CL3 (non-genuine RAM)

Samsung DDR 512MB PC3200U-30331-B2 CL3 underside (non-genuine RAM)

  • Non pwodwi : Samsung DDR SDRAM 512MB PC3200 (pati ki pa otantik)
  • Nimewo pati : PC3200U-30331-B2 M368L6423ETM-CCC
  • Manifakti : Samsung Elektwonik (SEC)
  • Peyi fabrikasyon : Koredisid
  • Konstwi ane/semèn : 2003/33
  • Kapasite Done : 512MB
  • Vitès revèy : 400Mhz (PC3200)
  • Karakteristik : 184peny, Unbuffered Non-ECC DDR SDRAM DIMM
  • Done chip konpozisyon : [SEC K4H560838E-TCCC] ✕ 8 chips
  • Bank done : 4 bank yo
  • Rafrechi entèval : 7.8μs (8K/64ms rafrechi)
  • Li latansi : 3 revèy (CL3)
  • Longè pete : 2, 4, 8
  • Kalite pete : sekans & interleave
  • Maksimòm sik rafrechi pete : 8
  • VDD, VDDQ : 2.6V±0.1V
]]> https://www.devicelog.com/memory/dram/ddr-sdram/samsung-ddr-512mb-pc3200-cl3-b/feed/ 3 eKmemory 2GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (2Rx8) https://www.devicelog.com/ht/memory/dram/ddr3-sdram/ekmemory-ddr3-2gb-pc3-10600-1333mhz-2rx8/ https://www.devicelog.com/ht/memory/dram/ddr3-sdram/ekmemory-ddr3-2gb-pc3-10600-1333mhz-2rx8/#comments Sun, 03 Mar 2013 06:14:35 +0000 https://www.devicelog.com/?p=643-ht EKmemory DDR3 2GB PC3-10600 1333Mhz (2Rx8) frontside

EKmemory DDR3 2GB PC3-10600 1333Mhz (2Rx8) backside

  • Non pwodwi : EKmemory DDR3 SDRAM 2GB 2Rx8 PC3-10600U-9-10-B0
  • Manifakti : EKmemory
  • Peyi fabrikasyon : Koredisid
  • Kapasite Done : 2GB
  • Vitès revèy : 1333Mhz (PC3-10600)
  • Karakteristik : 240peny, Unbuffer ki pa ECC DDR3 SDRAM DIMM
  • Done chip konpozisyon : [EKM324L28BP8-13] ✕ 16 chips
  • VDD vòltaj : 1.5V
  • Homepage : http://www.ekmemory.com/bbs/view.php?id=dram&non = 91

EKmemory_DDR3_2GB_2Rx8_PC3-10600U-9-10-B0_package

]]> https://www.devicelog.com/memory/dram/ddr3-sdram/ekmemory-ddr3-2gb-pc3-10600-1333mhz-2rx8/feed/ 1 Samsung 4GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (2Rx8, Kore di) https://www.devicelog.com/ht/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/ https://www.devicelog.com/ht/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/#respond Thu, 10 Jan 2013 02:20:09 +0000 https://www.devicelog.com/?p=602-ht Samsung DDR3 SDRAM 4GB Memory DIMM (2Rx8 PC3-10600U-09-11-B1 M378B5273DH0-CH9 1131)

Non pwodwi Samsung 4GB DDR3 SDRAM PC3-10600 memwa
(2Rx8, PC3-10600U-09-10-A0, M378B5273DH0-CH9, M378B5273DH1)
Manifakti Samsung Elektwonik (SEC)
Peyi fabrikasyon Koredisid
Konstwi ane/semèn 2011/31
Kapasite Done 4GB
Vitès revèy 1333Mhz (PC3-10600)
Distribisyon memwa Cl = 9, trcd = 9, trp = 9
Karakteristik 240peny, Unbuffer ki pa ECC DDR3 SDRAM DIMM
Bits done x64
Pwofondè / Bit òganizasyon 512M / x8
Bank Modil Entèn yo 8
Ranje 2
Done chip konpozisyon [SEC HCH9 K4B2G0846D] ✕ 16 chips
(256Mbit ✕ 8 ✕ 16 pcs)
Revizyon Component 4jenerasyon an
Pake FBGA (San plon & San alojene)
Wotè 30mm
VDD vòltaj 1.5V
Ranje tanperati ka opere 0°C ~ 85 °C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/feed/ 0 A-DATA Vitesta 512MB DDR600 DIMM (PC4800) https://www.devicelog.com/ht/memory/dram/ddr-sdram/adata-vitesta-ddr600-512mb/ https://www.devicelog.com/ht/memory/dram/ddr-sdram/adata-vitesta-ddr600-512mb/#respond Thu, 25 Oct 2012 01:49:42 +0000 https://www.devicelog.com/?p=455-ht A-DATA Vitesta DDR600 Viesta memwa, nan modil memwa DDR SDRAM, premyèman reyalize vitès revèy 600Mhz ak chips memwa Samsung TCCD. Kapasite done A-data Viesta te 512MB oswa 256MB. It was mostly used for ovcrclocking.

ADATA DDR600 Vitesta 512MB Package frontside

ADATA DDR600 Vitesta 512MB Package backside

 

  • Non pwodwi
    • A-DATA Vitesta DDR600 512MB
  • Nimewo Pati
    • MDOSSLF3H47A0B1G0Z
  • Manifakti
    • A-DONE
  • Peyi fabrikasyon
    • Taiwan
  • Bati Ane
    • 2004
  • Karakteristik
    • 184peny
    • Ki pa ECC DDR SDRAM unbuffer
  • Kapasite Done
    • 512MB
  • Vitès revèy
    • 600Mhz (PC4800)
  • Voltage
    • 2.8± 0.1V
  • Chip Konpozisyon
    • Samsung TCCD 16 chips
  • PCB Wotè
    • 31.75mm, 6 kouch
  • Ranje tanperati ka opere
    • 0~ 95 ℃
  • Bank modil
    • 2 bank fizik

ADATA DDR600 Vitesta 512MB Module frontside

ADATA DDR600 Vitesta 512MB Module backside

ADATA DDR600 Vitesta 512MB Module bottomside

]]> https://www.devicelog.com/memory/dram/ddr-sdram/adata-vitesta-ddr600-512mb/feed/ 0 ELPIDA 2GB DDR3 SDRAM SO-DIMM PC3-10600S-9-10-F1 https://www.devicelog.com/ht/memory/dram/ddr3-sdram/elpida-ddr3-so-dimm-2gb-pc3-10600s-9-10-f1/ https://www.devicelog.com/ht/memory/dram/ddr3-sdram/elpida-ddr3-so-dimm-2gb-pc3-10600s-9-10-f1/#comments Fri, 09 Mar 2012 07:39:10 +0000 https://www.devicelog.com/?p=256-ht ELPIDA DDR3 2GB 2Rx8 PC10600-9-10-F1 Frontside

ELPIDA DDR3 2GB 2Rx8 PC10600-9-10-F1 Rear

  • Non pwodwi : ELPIDA 2GB 2Rx8 PC3-10600S-9-10-F1
  • Nimewo Pati : EBJ21UE8BFU0-DJ-F
  • Manifakti : ELPIDA
  • Peyi fabrikasyon : Taiwan
  • Konstwi Ane/Semèn : 2010/38
  • Faktè fòm : DDR3 SO-DIMM
  • Karakteristik : 204peny, Ki pa ECC
  • Kapasite memwa : 2GB
  • Maksimòm to done : 1333Mbps
  • Voltage : 1.5V
  • Òganizasyon : 256M mo × 64 pyès, 2 ran
  • Chip Konpozisyon : J1108BFBG-DJ-F × 16
  • Latansi (CL-tRCD-tRP) : 9-9-9
  • PCB Wotè : 30mm
  • Ranje tanperati ka opere : 0~ 95 ℃
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/elpida-ddr3-so-dimm-2gb-pc3-10600s-9-10-f1/feed/ 6