4GB – DeviceLog.com https://www.devicelog.com/ht/ device, part, spesifikasyon Sat, 04 Jun 2016 15:07:22 +0000 ht hourly 1 https://wordpress.org/?v=6.6.2 Samsung 4GB PC3-10600 DDR3 SDRAM SO-DIMM https://www.devicelog.com/ht/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/ https://www.devicelog.com/ht/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/#comments Mon, 02 Mar 2015 13:25:48 +0000 https://www.devicelog.com/?p=791-ht Samsung Electronics te pibliye modil DDR3 SDRAM lè l sèvi avèk teknoloji pwosesis 30nm an Jiyè 2010. This RAM module was made by the 40nm process technology.

Samsung SODIMM DDR3 PC3-10600 4GB frontside Samsung SODIMM DDR3 PC3-10600 4GB rearside

Non pwodwi Samsung ddr3 sdram pc3-10600 4GB SO-DIMM
(2Rx8, PC3-10600S-09-10-F2, M471B5273CH0-CH9)
Manifakti Samsung Elektwonik (SEC)
Peyi fabrikasyon Lachin
Konstwi ane/semèn 2011/13
Kapasite Done 4GB
Vitès revèy 1333Mhz (PC3-10600)
Distribisyon memwa Cl = 9, trcd = 9, trp = 9
Karakteristik 204peny, Sodimm, Unbuffer ki pa ECC DDR3 SDRAM
Teknoloji Pwosesis Pwodiksyon 40nm
Bits done x64
Bank Modil Entèn yo 8
Ranje 2
Done chip konpozisyon 256M x 8 * 16 pcs
Revizyon Component 2GB, C-mouri
Pake 78 Boul fbga
Wotè 30mm
VDD vòltaj 1.5V
Ranje tanperati ka opere 0°C ~ 85 °C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/feed/ 3 Samsung 4GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (2Rx8, Kore di) https://www.devicelog.com/ht/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/ https://www.devicelog.com/ht/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/#respond Thu, 10 Jan 2013 02:20:09 +0000 https://www.devicelog.com/?p=602-ht Samsung DDR3 SDRAM 4GB Memory DIMM (2Rx8 PC3-10600U-09-11-B1 M378B5273DH0-CH9 1131)

Non pwodwi Samsung 4GB DDR3 SDRAM PC3-10600 Memory
(2Rx8, PC3-10600U-09-10-A0, M378B5273DH0-CH9, M378B5273DH1)
Manifakti Samsung Elektwonik (SEC)
Peyi fabrikasyon Koredisid
Konstwi ane/semèn 2011/31
Kapasite Done 4GB
Vitès revèy 1333Mhz (PC3-10600)
Distribisyon memwa Cl = 9, trcd = 9, trp = 9
Karakteristik 240peny, Unbuffer ki pa ECC DDR3 SDRAM DIMM
Bits done x64
Pwofondè / Bit òganizasyon 512M / x8
Bank Modil Entèn yo 8
Ranje 2
Done chip konpozisyon [SEC HCH9 K4B2G0846D] ✕ 16 chips
(256Mbit ✕ 8 ✕ 16 pcs)
Revizyon Component 4jenerasyon an
Pake FBGA (San plon & San alojene)
Wotè 30mm
VDD vòltaj 1.5V
Ranje tanperati ka opere 0°C ~ 85 °C
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