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	<title>KM44C1000AJ &#8211; DeviceLog.com</title>
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		<title>Samsung 1 MB de DRAM SIMM 30pin</title>
		<link>https://www.devicelog.com/es/memory/dram/original-dram/samsung-30pin-1mb-dram-simm/</link>
					<comments>https://www.devicelog.com/es/memory/dram/original-dram/samsung-30pin-1mb-dram-simm/#comments</comments>
		
		<dc:creator><![CDATA[DeviceLog.com]]></dc:creator>
		<pubDate>Fri, 18 May 2012 11:01:28 +0000</pubDate>
				<category><![CDATA[DRAM original]]></category>
		<category><![CDATA[30alfiler]]></category>
		<category><![CDATA[32poco]]></category>
		<category><![CDATA[DRACMA]]></category>
		<category><![CDATA[KM44C1000AJ]]></category>
		<category><![CDATA[KM44C1000BJ]]></category>
		<category><![CDATA[KM44C1000CJ]]></category>
		<category><![CDATA[KMM591000AN-7]]></category>
		<category><![CDATA[KMM591000BN-7]]></category>
		<category><![CDATA[paridad]]></category>
		<category><![CDATA[Samsung]]></category>
		<category><![CDATA[SIMM]]></category>
		<guid isPermaLink="false">https://www.devicelog.com/?p=326-es</guid>

					<description><![CDATA[KMM591000AN-7 está compuesto por dos chips KM44C1000AJ-7 y un chip KM44C1000CJ-7.  KMM591000BN-7 se compone de dos chips KM44C1000BJ-7 y un chip KM44C1000CJ-7. Son SIMM DRAM de 1 MB producidos por Samsung Electronics. Empresa de fabricación : Año de fabricación de Samsung Electronics : 1992 / 1993 País de fabricación : Características del módulo de Corea del Sur : 30alfiler, SIMM, Capacidad de memoria RAM de paridad [&#8230;]]]></description>
										<content:encoded><![CDATA[<p><center><a href="https://www.devicelog.com/wp-content/uploads/2012/05/Samsung-1MB-DRAM-SIMM-frontsideKMM591000AN-7-KMM591000BN-7.jpg" data-rel="lightbox-gallery-xFw6OrWy" data-rl_title="Samsung 1MB DRAM SIMM frontside (KMM591000AN-7, KMM591000BN-7)" data-rl_caption="" title="Samsung 1MB DRAM SIMM frontside (KMM591000AN-7, KMM591000BN-7)"><img fetchpriority="high" decoding="async" class=" size-medium wp-image-334 aligncenter" src="https://www.devicelog.com/wp-content/uploads/2012/05/Samsung-1MB-DRAM-SIMM-frontsideKMM591000AN-7-KMM591000BN-7-500x272.jpg" alt="Samsung 1MB DRAM SIMM backside (KMM591000AN-7, KMM591000BN-7) (KM44C1000AJ-7, KM44C1000BJ-7)" width="500" height="272" srcset="https://www.devicelog.com/wp-content/uploads/2012/05/Samsung-1MB-DRAM-SIMM-frontsideKMM591000AN-7-KMM591000BN-7-500x272.jpg 500w, https://www.devicelog.com/wp-content/uploads/2012/05/Samsung-1MB-DRAM-SIMM-frontsideKMM591000AN-7-KMM591000BN-7-200x109.jpg 200w, https://www.devicelog.com/wp-content/uploads/2012/05/Samsung-1MB-DRAM-SIMM-frontsideKMM591000AN-7-KMM591000BN-7.jpg 800w" sizes="(max-width: 500px) 100vw, 500px" /></a></center></p>
<p><center><a href="https://www.devicelog.com/wp-content/uploads/2012/05/Samsung-1MB-DRAM-SIMM-backsideKMM591000AN-7-KMM591000BN-7.jpg" data-rel="lightbox-gallery-xFw6OrWy" data-rl_title="Samsung 1MB DRAM SIMM backside (KMM591000AN-7, KMM591000BN-7)" data-rl_caption="" title="Samsung 1MB DRAM SIMM backside (KMM591000AN-7, KMM591000BN-7)"><img decoding="async" class="aligncenter size-medium wp-image-333" src="https://www.devicelog.com/wp-content/uploads/2012/05/Samsung-1MB-DRAM-SIMM-backsideKMM591000AN-7-KMM591000BN-7-500x291.jpg" alt="Samsung 1MB DRAM SIMM backside (KMM591000AN-7, KMM591000BN-7) (KM44C1000AJ-7, KM44C1000BJ-7)" width="500" height="291" srcset="https://www.devicelog.com/wp-content/uploads/2012/05/Samsung-1MB-DRAM-SIMM-backsideKMM591000AN-7-KMM591000BN-7-500x291.jpg 500w, https://www.devicelog.com/wp-content/uploads/2012/05/Samsung-1MB-DRAM-SIMM-backsideKMM591000AN-7-KMM591000BN-7-200x116.jpg 200w, https://www.devicelog.com/wp-content/uploads/2012/05/Samsung-1MB-DRAM-SIMM-backsideKMM591000AN-7-KMM591000BN-7.jpg 800w" sizes="(max-width: 500px) 100vw, 500px" /></a></center></p>
<p>KMM591000AN-7 está compuesto por dos chips KM44C1000AJ-7 y un chip KM44C1000CJ-7.  KMM591000BN-7 se compone de dos chips KM44C1000BJ-7 y un chip KM44C1000CJ-7. They are 1MB DRAM SIMMs produced by Samsung Electronics.</p>
<ul>
<li>Empresa de fabricación : Samsung Electronics</li>
<li>Año de fabricación : 1992 / 1993</li>
<li>País de fabricación : Corea del Sur</li>
<li>Características del módulo : 30alfiler, SIMM, RAM con paridad</li>
<li>Capacidad de memoria : 1MEGABYTE</li>
<li>Banda ancha : 8poco</li>
<li>Característica de velocidad : 70ns(TRAC)</li>
<li>Composición de chip :<br />
KMM591000AN-7 = KM44C1000AJ-7 × 2 + KM44C1000CJ-7<br />
KMM591000BN-7 = KM44C1000BJ-7 × 2 + KM44C1000CJ-7</li>
</ul>
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