https://www.devicelog.com/da/ device, part, spec Tue, 23 Mar 2021 10:33:05 +0000 da hourly 1 https://wordpress.org/?v=6.6.2 https://www.devicelog.com/da/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/ https://www.devicelog.com/da/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/#respond Tue, 23 Mar 2021 10:30:05 +0000 https://www.devicelog.com/?p=1311-da

produktnavn	EK Memory 2GB DDR SO-DIMM PC2-5300 CL5
Varenummer	EKM256S74BP8-E6
Fabrikant	EK Hukommelse
fremstillingsland	Taiwan
Chip Bygge år/uge	2008/27
Hukommelsesmodul type	DDR2 SO-DIMM 200 pin
Datakapacitet	2DK
Urets hastighed	667Mhz (PC2-5300)
Memory Timing	CL=5, tRCD=5, tRP=5
Funktioner	200pin unbuffered Ikke-ECC Notesbog(Laptop) Hukommelse
databit	x64
Data Chip info	EK20908A8A-3EG 20827 XCG248-UA3G
Pakke	FBGA (Fine-pitch BGA)
VDD Spænding	1.8V

 

]]> https://www.devicelog.com/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/feed/ 0 https://www.devicelog.com/da/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/ https://www.devicelog.com/da/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/#comments Wed, 06 Nov 2019 07:38:24 +0000 https://www.devicelog.com/?p=1233-da

produktnavn	Samsung DDR4 SDRAM 16GB 2R × 8 PC4-21300 (PC4-2666V-UB1-11)
Varenummer	M378A2K43CB1-CTD (C-den)
Fabrikant	Samsung Electronics
fremstillingsland	Kina
Byg År / Uge	2019 / 06
DIMM typen	Udinn
Datakapacitet	16DK
Datahastighed (Max Bandwidth)	2666.67 MT / s (21333.33 MB / s)
Memory Timing (CL – tRCD – tRP – tRAS – TRC)	19-19-19-43-61
Funktioner	288pin, DDR4 Unbuffered ECC SDRAM DIMM
databit	x64
Intern Modul Banker	16 Banker (4 Bank grupper)
Ranks	2 (Dual Rank)
Komponent Sammensætning	(1G × 8) × 16 (K4A8G085WC-BCTD) × 16
Pakke	78FBGA med blyfri & Halogen-Free (i overensstemmelse med RoHS)
Højde	31.25 mm
VDD Spænding	1.2 V ± 0.06 V
Betjening Case Temperaturområde	Gennemsnitlig Opdater Periode 7.8us ved lavere derefter TSAG 85℃, 3.9os ved 85 ℃ < TSAG ≤ 95 ℃

 

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produktnavn	Samsung DDR4 SDRAM 8GB 1R × 8 PC4-21300 (PC4-2666V-UA2-11)
Varenummer	M378A1K43CB2-CTD (C-den)
Fabrikant	Samsung Electronics
fremstillingsland	Kina
Byg År / Uge	2018 / 28
DIMM typen	Udinn
Datakapacitet	8DK
Datahastighed (Max Bandwidth)	2666.67 MT / s (21333.33 MB / s)
Memory Timing (CL – tRCD – tRP – tRAS – TRC)	19-19-19-43-61
Funktioner	288pin, DDR4 Unbuffered ECC SDRAM DIMM
databit	x64
Intern Modul Banker	16 Banker (4 Bank grupper)
Ranks	1 (Single Rank)
Komponent Sammensætning	(1G × 8) × 8 (K4A8G085WC-BCTD) × 8
Pakke	78FBGA med blyfri & Halogen-Free (i overensstemmelse med RoHS)
Højde	30mm
VDD Spænding	1.2V ± 0.06V
Betjening Case Temperaturområde	Gennemsnitlig Opdater Periode 7.8us ved lavere derefter TSAG 85℃, 3.9os ved 85 ℃ < TSAG ≤ 95 ℃

 

]]> https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/feed/ 0 https://www.devicelog.com/da/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/ https://www.devicelog.com/da/memory/dram/ddr3-sdram/samsung-ddr3-sdram-4gb-pc3-10600-1333mhz-2rx8-korea/#respond Thu, 10 Jan 2013 02:20:09 +0000 https://www.devicelog.com/?p=602-da

Produktnavn	Samsung 4GB DDR3 SDRAM PC3-10600 Hukommelse (2RX8, PC3-10600U-09-10-A0, M378B5273DH0-CH9, M378B5273DH1)
Fabrikant	Samsung Electronics (SEK)
Fremstillingsland	Sydkorea
Byg år / uge	2011/31
Datakapacitet	4DK
Ur hastighed	1333Mhz (PC3-10600)
Memory Timing	CL=9, tRCD = 9, tRP=9
Funktioner	240pin, Unbuffered DDR3 ECC SDRAM DIMM
databit	x64
Dybde / Bit organisation	512M / x8
Intern Modul banker	8
Ranks	2
Data chip sammensætning	[SEC HCH9 K4B2G0846D] ✕ 16 chips (256Mbit ✕ 8 ✕ 16 stk)
Komponent revision	4th generation
Pakke	FBGA (Blyfri & Halogenfri)
Højde	30mm
VDD spænding	1.5V
Betjening Case Temperaturområde	0° C ~ 85 ° C

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